Nicholas Joy

Person

Ballston Lake, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Methods for etching metal films using plasma processing
- Patent number 12,057,322
- Issue date Aug 6, 2024
- Tokyo Electron Limited
- Nicholas Joy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for filling recessed features in semiconductor devices with...
- Patent number 11,621,190
- Issue date Apr 4, 2023
- Tokyo Electron Limited
- Kai-Hung Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of bottom-up metallization in a recessed feature
- Patent number 11,450,562
- Issue date Sep 20, 2022
- Tokyo Electron Limited
- Kai-Hung Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of patterning a metal film with improved sidewall roughness
- Patent number 11,322,364
- Issue date May 3, 2022
- Tokyo Electron Limited
- Nicholas Joy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for selective etching at an interface between materials
- Patent number 11,133,194
- Issue date Sep 28, 2021
- Tokyo Electron Limited
- Sergey Voronin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for filling recessed features in semiconductor devices with...
- Patent number 11,024,535
- Issue date Jun 1, 2021
- Tokyo Electron Limited
- Kai-Hung Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods to protect nitride layers during formation of silicon germa...
- Patent number 10,903,077
- Issue date Jan 26, 2021
- Tokyo Electron Limited
- Yusuke Yoshida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Platform and method of operating for integrated end-to-end CMP-less...
- Patent number 10,861,744
- Issue date Dec 8, 2020
- Tokyo Electron Limited
- Ying Trickett
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of protecting low-K layers
- Patent number 10,734,278
- Issue date Aug 4, 2020
- Tokyo Electron Limited
- Hirokazu Aizawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ruthenium metal feature fill for interconnects
- Patent number 10,700,009
- Issue date Jun 30, 2020
- Tokyo Electron Limited
- Kai-Hung Yu
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of integrated circuit fabrication with dual metal power rail
- Patent number 10,580,691
- Issue date Mar 3, 2020
- Tokyo Electron Limited
- Soo Doo Chae
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for high throughput using beam scan size and beam position i...
- Patent number 10,256,095
- Issue date Apr 9, 2019
- TEL Epion Inc.
- Soo Doo Chae
- G05 - CONTROLLING REGULATING
Information Patent Grant
Method of surface profile correction using gas cluster ion beam
- Patent number 9,875,947
- Issue date Jan 23, 2018
- TEL Epion Inc.
- Noel Russell
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Protection Layer Formation during Plasma Etching Conductive Materials
- Publication number 20240371655
- Publication date Nov 7, 2024
- TOKYO ELECTRON LIMITED
- Yen-Tien Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Conductive Material Deposition
- Publication number 20240178003
- Publication date May 30, 2024
- TOKYO ELECTRON LIMITED
- Hirokazu Aizawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Patterning a Substrate Using Photolithography
- Publication number 20230197505
- Publication date Jun 22, 2023
- TOKYO ELECTRON LIMITED
- Katie Lutker-Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF PATTERNING A METAL FILM WITH IMPROVED SIDEWALL ROUGHNESS
- Publication number 20210313192
- Publication date Oct 7, 2021
- TOKYO ELECTRON LIMITED
- Nicholas Joy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FILLING RECESSED FEATURES IN SEMICONDUCTOR DEVICES WITH...
- Publication number 20210287936
- Publication date Sep 16, 2021
- TOKYO ELECTRON LIMITED
- Kai-Hung Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR ETCHING METAL FILMS USING PLASMA PROCESSING
- Publication number 20210118693
- Publication date Apr 22, 2021
- TOKYO ELECTRON LIMITED
- Nicholas Joy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF BOTTOM-UP METALLIZATION IN A RECESSED FEATURE
- Publication number 20210082750
- Publication date Mar 18, 2021
- TOKYO ELECTRON LIMITED
- Kai-Hung YU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Selective Etching at an Interface Between Materials
- Publication number 20200266070
- Publication date Aug 20, 2020
- TOKYO ELECTRON LIMITED
- Sergey Voronin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FILLING RECESSED FEATURES IN SEMICONDUCTOR DEVICES WITH...
- Publication number 20200118871
- Publication date Apr 16, 2020
- TOKYO ELECTRON LIMITED
- Kai-Hung Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS TO PROTECT NITRIDE LAYERS DURING FORMATION OF SILICON GERMA...
- Publication number 20200027736
- Publication date Jan 23, 2020
- TOKYO ELECTRON LIMITED
- Yusuke Yoshida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Protecting Low-K Layers
- Publication number 20190385906
- Publication date Dec 19, 2019
- TOKYO ELECTRON LIMITED
- Hirokazu Aizawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PLATFORM AND METHOD OF OPERATING FOR INTEGRATED END-TO-END CMP-LESS...
- Publication number 20190295887
- Publication date Sep 26, 2019
- TOKYO ELECTRON LIMITED
- Ying Trickett
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RUTHENIUM METAL FEATURE FILL FOR INTERCONNECTS
- Publication number 20190103363
- Publication date Apr 4, 2019
- TOKYO ELECTRON LIMITED
- Kai-Hung Yu
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD OF INTEGRATED CIRCUIT FABRICATION WITH DUAL METAL POWER RAIL
- Publication number 20180350665
- Publication date Dec 6, 2018
- TOKYO ELECTRON LIMITED
- Soo Doo Chae
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR HIGH THROUGHPUT USING BEAM SCAN SIZE AND BEAM POSITION I...
- Publication number 20170077001
- Publication date Mar 16, 2017
- TEL Epion Inc.
- Soo Doo Chae
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF SURFACE PROFILE CORRECTION USING GAS CLUSTER ION BEAM
- Publication number 20160322266
- Publication date Nov 3, 2016
- TEL Epion Inc.
- Noel Russell
- H01 - BASIC ELECTRIC ELEMENTS

Nicholas Joy

Person

Patents Grantslast 30 patents

Methods for etching metal films using plasma processing

Method for filling recessed features in semiconductor devices with...

Method of bottom-up metallization in a recessed feature

Method of patterning a metal film with improved sidewall roughness

Method for selective etching at an interface between materials

Method for filling recessed features in semiconductor devices with...

Methods to protect nitride layers during formation of silicon germa...

Platform and method of operating for integrated end-to-end CMP-less...

Method of protecting low-K layers

Ruthenium metal feature fill for interconnects

Method of integrated circuit fabrication with dual metal power rail

Method for high throughput using beam scan size and beam position i...

Method of surface profile correction using gas cluster ion beam

Patents Applicationslast 30 patents

Protection Layer Formation during Plasma Etching Conductive Materials

Method of Conductive Material Deposition

Method for Patterning a Substrate Using Photolithography

METHOD OF PATTERNING A METAL FILM WITH IMPROVED SIDEWALL ROUGHNESS

METHOD FOR FILLING RECESSED FEATURES IN SEMICONDUCTOR DEVICES WITH...

METHODS FOR ETCHING METAL FILMS USING PLASMA PROCESSING

METHOD OF BOTTOM-UP METALLIZATION IN A RECESSED FEATURE

Method for Selective Etching at an Interface Between Materials

METHOD FOR FILLING RECESSED FEATURES IN SEMICONDUCTOR DEVICES WITH...

METHODS TO PROTECT NITRIDE LAYERS DURING FORMATION OF SILICON GERMA...

Method of Protecting Low-K Layers

PLATFORM AND METHOD OF OPERATING FOR INTEGRATED END-TO-END CMP-LESS...

RUTHENIUM METAL FEATURE FILL FOR INTERCONNECTS

METHOD OF INTEGRATED CIRCUIT FABRICATION WITH DUAL METAL POWER RAIL

METHOD FOR HIGH THROUGHPUT USING BEAM SCAN SIZE AND BEAM POSITION I...

METHOD OF SURFACE PROFILE CORRECTION USING GAS CLUSTER ION BEAM