Nicolas A Papanicolaou

Person

Potomac, MD, US

People

Patents Grantslast 30 patents

Information Patent Grant
Antimonide-based compound semiconductor with titanium tungsten stack
- Patent number 8,927,354
- Issue date Jan 6, 2015
- Northrop Grumman Systems Corporation
- Yeong-Chang Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
n- and p-channel field effect transistors with single quantum well...
- Patent number 8,652,959
- Issue date Feb 18, 2014
- The United States of America, as represented by the Secretary of the Navy
- Brian R. Bennett
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
N- and p-channel field-effect transistors with single quantum well...
- Patent number 8,461,664
- Issue date Jun 11, 2013
- The United States of America, as represented by the Secretary of the Navy
- Brian R. Bennett
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Antimonide-based compound semiconductor with titanium tungsten stack
- Patent number 8,421,121
- Issue date Apr 16, 2013
- Northrop Grumman Systems Corporation
- Yeong-Chang Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Platinum and platinum silicide contacts on .beta.-silicon carbide
- Patent number 5,471,072
- Issue date Nov 28, 1995
- The United States of America as represented by the Secretary of the Navy
- Nicolas A. Papanicolaou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming platinum and platinum silicide schottky contacts...
- Patent number 5,270,252
- Issue date Dec 14, 1993
- United States of America as represented by the Secretary of the Navy
- Nicolas A. Papanicolaou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual active layer photoconductor
- Patent number 5,103,280
- Issue date Apr 7, 1992
- The United States of America as represented by the Secretary of the Navy
- Phillip E. Thompson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
TiW diffusion barrier for AuZn ohmic contact to P-Type InP
- Patent number 5,015,603
- Issue date May 14, 1991
- The United States of America as represented by the Secretary of the Navy
- John B. Boos
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Monolithic multichannel detector amplifier arrays and circuit channels
- Patent number 4,924,285
- Issue date May 8, 1990
- The United States of America as represented by the Secretary of the Navy
- Gordon W. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
A TiW diffusion barrier for AuZn ohmic contacts to p-type InP
- Patent number 4,816,881
- Issue date Mar 28, 1989
- United State of America as represented by the Secretary of the Navy
- John B. Boos
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making planar geometry Schottky diode using oblique evapo...
- Patent number 4,640,003
- Issue date Feb 3, 1987
- The United States of America as represented by the Secretary of the Navy
- Nicolas A. Papanicolaou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Saw-CTD parallel to serial imager
- Patent number 4,611,140
- Issue date Sep 9, 1986
- The United States of America as represented by the Secretary of the Navy
- Robert R. Whitlock
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Saw-CTD serial to parallel imager and waveform recorder
- Patent number 4,600,853
- Issue date Jul 15, 1986
- The United States of America as represented by the Secretary of the Navy
- Robert R. Whitlock
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Method of making rings
- Patent number 4,481,082
- Issue date Nov 6, 1984
- Martin Marietta Corporation
- Nicolas A. Papanicolaou
- B23 - MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR
Information Patent Grant
Method of fabricating a diamond heat sink
- Patent number 4,425,195
- Issue date Jan 10, 1984
- Martin Marietta Corporation
- Nicolas A. Papanicolaou
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
ANTIMONIDE-BASED COMPOUND SEMICONDUCTOR WITH TITANIUM TUNGSTEN STACK
- Publication number 20130210219
- Publication date Aug 15, 2013
- Yeong-Chang CHOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
n- and p-Channel Field Effect Transistors with Single Quantum Well...
- Publication number 20130149845
- Publication date Jun 13, 2013
- THE GOVERNMENT OF THE UNITED STATES OF AMERICA, AS REPRESENTED BY THE SECRETA...
- Brian R. Bennett
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
N-and P-Channel Field-Effect Transistors with Single Quantum Well f...
- Publication number 20110297916
- Publication date Dec 8, 2011
- THE GOVERNMENT OF THE UNITED STATES OF AMERICA, AS REPRESENTED BY THE SECRETA...
- Brian R. Bennett
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Antimonide-based compound semiconductor with titanium tungsten stack
- Publication number 20080258176
- Publication date Oct 23, 2008
- Yeong-Chang Chou
- H01 - BASIC ELECTRIC ELEMENTS

Nicolas A Papanicolaou

Person

Patents Grantslast 30 patents

Antimonide-based compound semiconductor with titanium tungsten stack

n- and p-channel field effect transistors with single quantum well...

N- and p-channel field-effect transistors with single quantum well...

Antimonide-based compound semiconductor with titanium tungsten stack

Platinum and platinum silicide contacts on .beta.-silicon carbide

Method of forming platinum and platinum silicide schottky contacts...

Dual active layer photoconductor

TiW diffusion barrier for AuZn ohmic contact to P-Type InP

Monolithic multichannel detector amplifier arrays and circuit channels

A TiW diffusion barrier for AuZn ohmic contacts to p-type InP

Method of making planar geometry Schottky diode using oblique evapo...

Saw-CTD parallel to serial imager

Saw-CTD serial to parallel imager and waveform recorder

Method of making rings

Method of fabricating a diamond heat sink

Patents Applicationslast 30 patents

ANTIMONIDE-BASED COMPOUND SEMICONDUCTOR WITH TITANIUM TUNGSTEN STACK

n- and p-Channel Field Effect Transistors with Single Quantum Well...

N-and P-Channel Field-Effect Transistors with Single Quantum Well f...

Antimonide-based compound semiconductor with titanium tungsten stack