Nicolas Sassiat

Person

Dresden, DE

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor structure including a varactor and method for the for...
- Patent number 10,886,419
- Issue date Jan 5, 2021
- GLOBALFOUNDRIES Inc.
- Alexandru Romanescu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure including a varactor
- Patent number 9,960,284
- Issue date May 1, 2018
- GLOBALFOUNDRIES Inc.
- Alexandru Romanescu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure including a transistor having stress creati...
- Patent number 9,812,573
- Issue date Nov 7, 2017
- GLOBALFOUNDRIES Inc.
- Arkadiusz Malinowski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuits and methods of fabrication thereof
- Patent number 9,620,589
- Issue date Apr 11, 2017
- GLOBALFOUNDRIES, INC.
- Nicolas Sassiat
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuits with shallow trench isolations, and methods for...
- Patent number 9,460,955
- Issue date Oct 4, 2016
- GLOBALFOUNDRIES, INC.
- Ran Yan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low thermal budget schemes in semiconductor device fabrication
- Patent number 9,396,950
- Issue date Jul 19, 2016
- GLOBALFOUNDRIES Inc.
- Nicolas Sassiat
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a semiconductor device structure employing fluori...
- Patent number 9,263,270
- Issue date Feb 16, 2016
- GLOBALFOUNDRIES Inc.
- Alban Zaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for fabricating integrated circuits with polycrystalline si...
- Patent number 9,231,045
- Issue date Jan 5, 2016
- GLOBALFOUNDRIES, INC.
- Jan Hoentschel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate oxide quality for complex MOSFET devices
- Patent number 9,136,266
- Issue date Sep 15, 2015
- GLOBALFOUNDRIES Inc.
- Ran Yan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuits and methods for fabricating integrated circuits...
- Patent number 9,029,214
- Issue date May 12, 2015
- GLOBALFOUNDRIES, INC.
- Jan Hoentschel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for fabricating integrated circuits with the implantation o...
- Patent number 8,999,803
- Issue date Apr 7, 2015
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Nicolas Sassiat
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor with embedded strain-inducing material formed in cavitie...
- Patent number 8,951,877
- Issue date Feb 10, 2015
- GLOBALFOUNDRIES Inc.
- Nicolas Sassiat
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of inducing a desired stress in the channel region of a tra...
- Patent number 8,877,582
- Issue date Nov 4, 2014
- GLOBALFOUNDRIES Inc.
- Ralf Richter
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR STRUCTURE INCLUDING A VARACTOR AND METHOD FOR THE FOR...
- Publication number 20180198000
- Publication date Jul 12, 2018
- GLOBALFOUNDRIES INC.
- Alexandru Romanescu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE INCLUDING A TRANSISTOR HAVING STRESS CREATI...
- Publication number 20170330970
- Publication date Nov 16, 2017
- GLOBALFOUNDRIES INC.
- Arkadiusz Malinowski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE INCLUDING A VARACTOR
- Publication number 20170125610
- Publication date May 4, 2017
- GLOBALFOUNDRIES INC.
- Alexandru Romanescu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUITS AND METHODS OF FABRICATION THEREOF
- Publication number 20150287782
- Publication date Oct 8, 2015
- GLOBALFOUNDRIES, Inc.
- Nicolas Sassiat
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUITS WITH SHALLOW TRENCH ISOLATIONS, AND METHODS FOR...
- Publication number 20150145000
- Publication date May 28, 2015
- GLOBALFOUNDRIES, INC.
- Ran Yan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUITS WITH A CORRUGATED GATE, AND METHODS FOR PRODUCI...
- Publication number 20150076618
- Publication date Mar 19, 2015
- GLOBALFOUNDRIES, Inc.
- Ran Yan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE OXIDE QUALITY FOR COMPLEX MOSFET DEVICES
- Publication number 20150021703
- Publication date Jan 22, 2015
- GLOBALFOUNDRIES INC.
- Ran Yan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING A SEMICONDUCTOR DEVICE STRUCTURE EMPLOYING FLUORI...
- Publication number 20140361385
- Publication date Dec 11, 2014
- Alban Zaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR FABRICATING INTEGRATED CIRCUITS WITH THE IMPLANTATION O...
- Publication number 20140357028
- Publication date Dec 4, 2014
- Nicolas Sassiat
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR FABRICATING INTEGRATED CIRCUITS WITH POLYCRYSTALLINE SI...
- Publication number 20140319620
- Publication date Oct 30, 2014
- GLOBALFOUNDRIES, Inc.
- Jan Hoentschel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING A GATE ELECTRODE OF A SEMICONDUCTOR DEVICE, GATE...
- Publication number 20140264626
- Publication date Sep 18, 2014
- GLOBALFOUNDRIES INC.
- Ran Yan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FLUORINE-DOPED CHANNEL SILICON-GERMANIUM LAYER
- Publication number 20140264484
- Publication date Sep 18, 2014
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Nicolas SASSIAT
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR WITH EMBEDDED STRAIN-INDUCING MATERIAL FORMED IN CAVITIE...
- Publication number 20140264347
- Publication date Sep 18, 2014
- GLOBALFOUNDRIES INC.
- Nicolas Sassiat
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW THERMAL BUDGET SCHEMES IN SEMICONDUCTOR DEVICE FABRICATION
- Publication number 20140264349
- Publication date Sep 18, 2014
- GLOBALFOUNDRIES INC.
- Nicolas Sassiat
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR FORMING INTEGRATED CIRCUIT SYSTEMS EMPLOYING FLUORINE D...
- Publication number 20140256097
- Publication date Sep 11, 2014
- GLOBALFOUNDRIES INC.
- Ran Yan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRESS MEMORIZATION TECHNIQUE
- Publication number 20140248749
- Publication date Sep 4, 2014
- GLOBALFOUNDRIES INC.
- Jan Hoentschel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF INDUCING A DESIRED STRESS IN THE CHANNEL REGION OF A TRA...
- Publication number 20140231907
- Publication date Aug 21, 2014
- GLOBALFOUNDRIES INC.
- Ralf Richter
- H01 - BASIC ELECTRIC ELEMENTS

Nicolas Sassiat

Person

Patents Grantslast 30 patents

Semiconductor structure including a varactor and method for the for...

Semiconductor structure including a varactor

Semiconductor structure including a transistor having stress creati...

Integrated circuits and methods of fabrication thereof

Integrated circuits with shallow trench isolations, and methods for...

Low thermal budget schemes in semiconductor device fabrication

Method of forming a semiconductor device structure employing fluori...

Methods for fabricating integrated circuits with polycrystalline si...

Gate oxide quality for complex MOSFET devices

Integrated circuits and methods for fabricating integrated circuits...

Methods for fabricating integrated circuits with the implantation o...

Transistor with embedded strain-inducing material formed in cavitie...

Methods of inducing a desired stress in the channel region of a tra...

Patents Applicationslast 30 patents

SEMICONDUCTOR STRUCTURE INCLUDING A VARACTOR AND METHOD FOR THE FOR...

SEMICONDUCTOR STRUCTURE INCLUDING A TRANSISTOR HAVING STRESS CREATI...

SEMICONDUCTOR STRUCTURE INCLUDING A VARACTOR

INTEGRATED CIRCUITS AND METHODS OF FABRICATION THEREOF

INTEGRATED CIRCUITS WITH SHALLOW TRENCH ISOLATIONS, AND METHODS FOR...

INTEGRATED CIRCUITS WITH A CORRUGATED GATE, AND METHODS FOR PRODUCI...

GATE OXIDE QUALITY FOR COMPLEX MOSFET DEVICES

METHOD OF FORMING A SEMICONDUCTOR DEVICE STRUCTURE EMPLOYING FLUORI...

METHODS FOR FABRICATING INTEGRATED CIRCUITS WITH THE IMPLANTATION O...

METHODS FOR FABRICATING INTEGRATED CIRCUITS WITH POLYCRYSTALLINE SI...

METHOD FOR FORMING A GATE ELECTRODE OF A SEMICONDUCTOR DEVICE, GATE...

FLUORINE-DOPED CHANNEL SILICON-GERMANIUM LAYER

TRANSISTOR WITH EMBEDDED STRAIN-INDUCING MATERIAL FORMED IN CAVITIE...

LOW THERMAL BUDGET SCHEMES IN SEMICONDUCTOR DEVICE FABRICATION

METHODS FOR FORMING INTEGRATED CIRCUIT SYSTEMS EMPLOYING FLUORINE D...

STRESS MEMORIZATION TECHNIQUE

METHODS OF INDUCING A DESIRED STRESS IN THE CHANNEL REGION OF A TRA...