Nicole K. Thomas

Person

Portland, OR, US

People

Patents Grantslast 30 patents

Information Patent Grant
Ribbon or wire transistor stack with selective dipole threshold vol...
- Patent number 12,183,739
- Issue date Dec 31, 2024
- Intel Corporation
- Nicole Thomas
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium nitride (GAN) three-dimensional integrated circuit technology
- Patent number 12,148,747
- Issue date Nov 19, 2024
- Intel Corporation
- Han Wui Then
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Plug and recess process for dual metal gate on stacked nanoribbon d...
- Patent number 12,046,652
- Issue date Jul 23, 2024
- Intel Corporation
- Nicole Thomas
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacked forksheet transistors
- Patent number 11,996,411
- Issue date May 28, 2024
- Intel Corporation
- Cheng-Ying Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Quantum dot devices with overlapping gates
- Patent number 11,942,516
- Issue date Mar 26, 2024
- Intel Corporation
- Nicole K. Thomas
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Gate-all-around integrated circuit structures having depopulated ch...
- Patent number 11,862,636
- Issue date Jan 2, 2024
- Intel Corporation
- Nicole Thomas
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate walls for quantum dot devices
- Patent number 11,749,721
- Issue date Sep 5, 2023
- Intel Corporation
- Hubert C. George
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Quantum well stacks for quantum dot devices
- Patent number 11,721,724
- Issue date Aug 8, 2023
- Intel Corporation
- Nicole K. Thomas
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Quantum dot devices with multiple layers of gate metal
- Patent number 11,699,747
- Issue date Jul 11, 2023
- Intel Corporation
- Hubert C. George
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Quantum dot devices
- Patent number 11,688,735
- Issue date Jun 27, 2023
- Intel Corporation
- James S. Clarke
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Quantum dot devices
- Patent number 11,682,701
- Issue date Jun 20, 2023
- Intel Corporation
- Stephanie A. Bojarski
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Quantum well stacks for quantum dot devices
- Patent number 11,677,017
- Issue date Jun 13, 2023
- Intel Corporation
- Ravi Pillarisetty
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Quantum dot devices
- Patent number 11,664,421
- Issue date May 30, 2023
- Intel Corporation
- Hubert C. George
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Quantum dot devices with conductive liners
- Patent number 11,658,212
- Issue date May 23, 2023
- Intel Corporation
- Hubert C. George
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Quantum dot devices with passive barrier elements in a quantum well...
- Patent number 11,616,126
- Issue date Mar 28, 2023
- Intel Corporation
- Hubert C. George
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Quantum dot array devices
- Patent number 11,594,599
- Issue date Feb 28, 2023
- Intel Corporation
- James S. Clarke
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Superconducting qubit device packages
- Patent number 11,569,428
- Issue date Jan 31, 2023
- Santa Clara
- Jeanette M. Roberts
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Quantum dot devices with selectors
- Patent number 11,557,630
- Issue date Jan 17, 2023
- Intel Corporation
- Ravi Pillarisetty
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Quantum dot devices
- Patent number 11,482,614
- Issue date Oct 25, 2022
- Intel Corporation
- Ravi Pillarisetty
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Quantum dot devices with diodes for electrostatic discharge protection
- Patent number 11,450,765
- Issue date Sep 20, 2022
- Intel Corporation
- Hubert C. George
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Quantum dot devices
- Patent number 11,444,188
- Issue date Sep 13, 2022
- Intel Corporation
- Ravi Pillarisetty
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Multi-spacers for quantum dot device gates
- Patent number 11,424,324
- Issue date Aug 23, 2022
- Intel Corporation
- Hubert C. George
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Differentially strained quantum dot devices
- Patent number 11,417,755
- Issue date Aug 16, 2022
- Intel Corporation
- Kanwaljit Singh
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Quantum dot devices with fine-pitched gates
- Patent number 11,417,765
- Issue date Aug 16, 2022
- Intel Corporation
- Nicole K. Thomas
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Wafer-scale integration of dopant atoms for donor- or acceptor-base...
- Patent number 11,355,623
- Issue date Jun 7, 2022
- Intel Corporation
- Lester Lampert
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Gate-all-around integrated circuit structures having depopulated ch...
- Patent number 11,348,919
- Issue date May 31, 2022
- Intel Corporation
- Nicole Thomas
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Quantum dot devices with overlapping gates
- Patent number 11,335,778
- Issue date May 17, 2022
- Intel Corporation
- Nicole K. Thomas
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Independent double-gate quantum dot qubits
- Patent number 11,288,586
- Issue date Mar 29, 2022
- Intel Corporation
- Ravi Pillarisetty
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Quantum dot devices with single electron transistor detectors
- Patent number 11,276,756
- Issue date Mar 15, 2022
- Intel Corporation
- Hubert C. George
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Quantum dot devices with strain control
- Patent number 11,183,564
- Issue date Nov 23, 2021
- Intel Corporation
- Nicole K. Thomas
- B82 - NANO-TECHNOLOGY

Patents Applicationslast 30 patents

Information Patent Application
GALLIUM NITRIDE (GAN) THREE-DIMENSIONAL INTEGRATED CIRCUIT TECHNOLOGY
- Publication number 20250040231
- Publication date Jan 30, 2025
- Intel Corporation
- Han Wui THEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PLUG AND RECESS PROCESS FOR DUAL METAL GATE ON STACKED NANORIBBON D...
- Publication number 20240332389
- Publication date Oct 3, 2024
- Intel Corporation
- Nicole THOMAS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED FORKSHEET TRANSISTORS
- Publication number 20240234422
- Publication date Jul 11, 2024
- Intel Corporation
- Cheng-Ying HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING DEPOPULATED CH...
- Publication number 20240088153
- Publication date Mar 14, 2024
- Intel Corporation
- Nicole THOMAS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOWER DEVICE ACCESS IN STACKED TRANSISTOR DEVICES
- Publication number 20230420460
- Publication date Dec 28, 2023
- Intel Corporation
- Cheng-Ying Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIFFUSION CUT STRESSORS FOR STACKED TRANSISTORS
- Publication number 20230420562
- Publication date Dec 28, 2023
- Intel Corporation
- Cheng-Ying Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DUAL METAL SILICIDE FOR STACKED TRANSISTOR DEVICES
- Publication number 20230402507
- Publication date Dec 14, 2023
- Intel Corporation
- Rohit Galatage
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE REMOVAL OF CHANNEL BODIES IN STACKED GATE-ALL-AROUND (GAA...
- Publication number 20230395678
- Publication date Dec 7, 2023
- Intel Corporation
- Munzarin F. Qayyum
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REMOVAL OF UPPER CHANNEL BODIES IN STACKED GATE-ALL-AROUND (GAA) DE...
- Publication number 20230395697
- Publication date Dec 7, 2023
- Intel Corporation
- Nicole K. Thomas
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOURCE OR DRAIN METALLIZATION PRIOR TO CONTACT FORMATION IN STACKED...
- Publication number 20230197777
- Publication date Jun 22, 2023
- Intel Corporation
- Gilbert Dewey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WRAP-AROUND CONTACTS FOR STACKED TRANSISTORS
- Publication number 20230197815
- Publication date Jun 22, 2023
- Intel Corporation
- Cheng-Ying Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FRONTSIDE AND BACKSIDE EPI CONTACT
- Publication number 20230197569
- Publication date Jun 22, 2023
- Intel Corporation
- Gilbert Dewey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-REACTIVE EPI CONTACT FOR STACKED TRANSISTORS
- Publication number 20230197800
- Publication date Jun 22, 2023
- Intel Corporation
- Gilbert Dewey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANORIBBON-BASED QUANTUM DOT DEVICES
- Publication number 20230197833
- Publication date Jun 22, 2023
- Intel Corporation
- Nicole K. Thomas
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
STACKED TRANSISTOR STRUCTURES WITH DIVERSE GATE MATERIALS
- Publication number 20230197728
- Publication date Jun 22, 2023
- Intel Corporation
- Nicole K. Thomas
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ASYMMETRIC GATE STRUCTURES AND CONTACTS FOR STACKED TRANSISTORS
- Publication number 20230178552
- Publication date Jun 8, 2023
- Intel Corporation
- Cheng-Ying Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LAYER TRANSFER PROCESS TO FORM BACKSIDE CONTACTS IN SEMICONDUCTOR D...
- Publication number 20230145229
- Publication date May 11, 2023
- Intel Corporation
- Nicole K. Thomas
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STEPWISE INTERNAL SPACERS FOR STACKED TRANSISTOR STRUCTURES
- Publication number 20230132749
- Publication date May 4, 2023
- Intel Corporation
- Nicole K. Thomas
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATTICE STACK FOR INTERNAL SPACER FABRICATION
- Publication number 20230134379
- Publication date May 4, 2023
- Intel Corporation
- Cheng-Ying Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE (GAN) LAYER TRANSFER FOR INTEGRATED CIRCUIT TECHNOLOGY
- Publication number 20230090106
- Publication date Mar 23, 2023
- Intel Corporation
- Han Wui THEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE (GAN) INTEGRATED CIRCUIT TECHNOLOGY WITH OPTICAL CO...
- Publication number 20230081460
- Publication date Mar 16, 2023
- Intel Corporation
- Han Wui THEN
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
GATE-TO-GATE ISOLATION FOR STACKED TRANSISTOR ARCHITECTURE VIA SELE...
- Publication number 20230073078
- Publication date Mar 9, 2023
- Intel Corporation
- Willy Rachmady
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE (GAN) EPITAXY ON PATTERNED SUBSTRATE FOR INTEGRATED...
- Publication number 20230066336
- Publication date Mar 2, 2023
- Intel Corporation
- Pratik KOIRALA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE (GAN) INTEGRATED CIRCUIT TECHNOLOGY WITH MULTI-LAYE...
- Publication number 20230069054
- Publication date Mar 2, 2023
- Intel Corporation
- Souvik GHOSH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE (GAN) SELECTIVE EPITAXIAL WINDOWS FOR INTEGRATED CI...
- Publication number 20230062922
- Publication date Mar 2, 2023
- Intel Corporation
- Samuel James BADER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE (GAN) LAYER TRANSFER AND REGROWTH FOR INTEGRATED CI...
- Publication number 20230054719
- Publication date Feb 23, 2023
- Intel Corporation
- Pratik KOIRALA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE (GAN) INTEGRATED CIRCUIT TECHNOLOGY
- Publication number 20230047449
- Publication date Feb 16, 2023
- Intel Corporation
- Nicole K. THOMAS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-TO-GATE ISOLATION FOR STACKED TRANSISTOR ARCHITECTURE VIA NON-...
- Publication number 20230037957
- Publication date Feb 9, 2023
- Intel Corporation
- Nicole K. Thomas
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING DEPOPULATED CH...
- Publication number 20220262796
- Publication date Aug 18, 2022
- Intel Corporation
- Nicole THOMAS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
QUANTUM DOT DEVICES WITH OVERLAPPING GATES
- Publication number 20220216305
- Publication date Jul 7, 2022
- Intel Corporation
- Nicole K. Thomas
- B82 - NANO-TECHNOLOGY

Nicole K. Thomas

Person

Patents Grantslast 30 patents

Ribbon or wire transistor stack with selective dipole threshold vol...

Gallium nitride (GAN) three-dimensional integrated circuit technology

Plug and recess process for dual metal gate on stacked nanoribbon d...

Stacked forksheet transistors

Quantum dot devices with overlapping gates

Gate-all-around integrated circuit structures having depopulated ch...

Gate walls for quantum dot devices

Quantum well stacks for quantum dot devices

Quantum dot devices with multiple layers of gate metal

Quantum dot devices

Quantum dot devices

Quantum well stacks for quantum dot devices

Quantum dot devices

Quantum dot devices with conductive liners

Quantum dot devices with passive barrier elements in a quantum well...

Quantum dot array devices

Superconducting qubit device packages

Quantum dot devices with selectors

Quantum dot devices

Quantum dot devices with diodes for electrostatic discharge protection

Quantum dot devices

Multi-spacers for quantum dot device gates

Differentially strained quantum dot devices

Quantum dot devices with fine-pitched gates

Wafer-scale integration of dopant atoms for donor- or acceptor-base...

Gate-all-around integrated circuit structures having depopulated ch...

Quantum dot devices with overlapping gates

Independent double-gate quantum dot qubits

Quantum dot devices with single electron transistor detectors

Quantum dot devices with strain control

Patents Applicationslast 30 patents

GALLIUM NITRIDE (GAN) THREE-DIMENSIONAL INTEGRATED CIRCUIT TECHNOLOGY

PLUG AND RECESS PROCESS FOR DUAL METAL GATE ON STACKED NANORIBBON D...

STACKED FORKSHEET TRANSISTORS

GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING DEPOPULATED CH...

LOWER DEVICE ACCESS IN STACKED TRANSISTOR DEVICES

DIFFUSION CUT STRESSORS FOR STACKED TRANSISTORS

DUAL METAL SILICIDE FOR STACKED TRANSISTOR DEVICES

SELECTIVE REMOVAL OF CHANNEL BODIES IN STACKED GATE-ALL-AROUND (GAA...

REMOVAL OF UPPER CHANNEL BODIES IN STACKED GATE-ALL-AROUND (GAA) DE...

SOURCE OR DRAIN METALLIZATION PRIOR TO CONTACT FORMATION IN STACKED...

WRAP-AROUND CONTACTS FOR STACKED TRANSISTORS

FRONTSIDE AND BACKSIDE EPI CONTACT

NON-REACTIVE EPI CONTACT FOR STACKED TRANSISTORS

NANORIBBON-BASED QUANTUM DOT DEVICES

STACKED TRANSISTOR STRUCTURES WITH DIVERSE GATE MATERIALS

ASYMMETRIC GATE STRUCTURES AND CONTACTS FOR STACKED TRANSISTORS

LAYER TRANSFER PROCESS TO FORM BACKSIDE CONTACTS IN SEMICONDUCTOR D...

STEPWISE INTERNAL SPACERS FOR STACKED TRANSISTOR STRUCTURES

LATTICE STACK FOR INTERNAL SPACER FABRICATION

GALLIUM NITRIDE (GAN) LAYER TRANSFER FOR INTEGRATED CIRCUIT TECHNOLOGY

GALLIUM NITRIDE (GAN) INTEGRATED CIRCUIT TECHNOLOGY WITH OPTICAL CO...

GATE-TO-GATE ISOLATION FOR STACKED TRANSISTOR ARCHITECTURE VIA SELE...

GALLIUM NITRIDE (GAN) EPITAXY ON PATTERNED SUBSTRATE FOR INTEGRATED...

GALLIUM NITRIDE (GAN) INTEGRATED CIRCUIT TECHNOLOGY WITH MULTI-LAYE...

GALLIUM NITRIDE (GAN) SELECTIVE EPITAXIAL WINDOWS FOR INTEGRATED CI...

GALLIUM NITRIDE (GAN) LAYER TRANSFER AND REGROWTH FOR INTEGRATED CI...

GALLIUM NITRIDE (GAN) INTEGRATED CIRCUIT TECHNOLOGY

GATE-TO-GATE ISOLATION FOR STACKED TRANSISTOR ARCHITECTURE VIA NON-...

GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING DEPOPULATED CH...

QUANTUM DOT DEVICES WITH OVERLAPPING GATES