Ning Jiang

Person

Wuhan City, Hubei Province, CN

People

Patents Applicationslast 30 patents

Information Patent Application
MEMORY DEVICES HAVING VERTICAL TRANSISTORS AND FABRICATING METHODS...
- Publication number 20230371241
- Publication date Nov 16, 2023
- Yangtze Memory Technologies Co., Ltd.
- Chao SUN
Information Patent Application
SEMICONDUCTOR DEVICES HAVING SHIELDING ELEMENT
- Publication number 20230245980
- Publication date Aug 3, 2023
- Yangtze Memory Technologies Co., Ltd.
- Chao SUN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES HAVING SHIELDING ELEMENTS
- Publication number 20230247819
- Publication date Aug 3, 2023
- Yangtze Memory Technologies Co., Ltd.
- Chao SUN
Information Patent Application
MEMORY DEVICES HAVING VERTICAL TRANSISTORS AND METHODS FOR FORMING...
- Publication number 20230064388
- Publication date Mar 2, 2023
- Yangtze Memory Technologies Co., Ltd.
- Wei Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICES HAVING VERTICAL TRANSISTORS AND METHODS FOR FORMING...
- Publication number 20230062524
- Publication date Mar 2, 2023
- Yangtze Memory Technologies Co., Ltd.
- Wei Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICES HAVING VERTICAL TRANSISTORS AND METHODS FOR FORMING...
- Publication number 20230060149
- Publication date Mar 2, 2023
- Yangtze Memory Technologies Co., Ltd.
- Hongbin Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY PERIPHERAL CIRCUIT HAVING THREE-DIMENSIONAL TRANSISTORS AND...
- Publication number 20220367504
- Publication date Nov 17, 2022
- YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Chao Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY PERIPHERAL CIRCUIT HAVING THREE-DIMENSIONAL TRANSISTORS AND...
- Publication number 20220367394
- Publication date Nov 17, 2022
- Yangtze Memory Technologies Co., Ltd.
- Chao Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY PERIPHERAL CIRCUIT HAVING THREE-DIMENSIONAL TRANSISTORS AND...
- Publication number 20220367503
- Publication date Nov 17, 2022
- YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Chao Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY PERIPHERAL CIRCUIT HAVING THREE-DIMENSIONAL TRANSISTORS AND...
- Publication number 20220367505
- Publication date Nov 17, 2022
- YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Liang Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VARIABLE CAPACITOR
- Publication number 20210336069
- Publication date Oct 28, 2021
- Yangtze Memory Technologies Co., Ltd.
- Chao Sun
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Applicationslast 30 patents

MEMORY DEVICES HAVING VERTICAL TRANSISTORS AND FABRICATING METHODS...

SEMICONDUCTOR DEVICES HAVING SHIELDING ELEMENT

SEMICONDUCTOR DEVICES HAVING SHIELDING ELEMENTS

MEMORY DEVICES HAVING VERTICAL TRANSISTORS AND METHODS FOR FORMING...

MEMORY DEVICES HAVING VERTICAL TRANSISTORS AND METHODS FOR FORMING...

MEMORY DEVICES HAVING VERTICAL TRANSISTORS AND METHODS FOR FORMING...

MEMORY PERIPHERAL CIRCUIT HAVING THREE-DIMENSIONAL TRANSISTORS AND...

MEMORY PERIPHERAL CIRCUIT HAVING THREE-DIMENSIONAL TRANSISTORS AND...

MEMORY PERIPHERAL CIRCUIT HAVING THREE-DIMENSIONAL TRANSISTORS AND...

MEMORY PERIPHERAL CIRCUIT HAVING THREE-DIMENSIONAL TRANSISTORS AND...

VARIABLE CAPACITOR