Nirmal Chaudhary

Person

Boise, ID, US

People

Patents Grantslast 30 patents

Information Patent Grant
Transistor with dopant-bearing metal in source and drain
- Patent number 8,390,080
- Issue date Mar 5, 2013
- Infineon Technologies AG
- Hong-Jyh Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electronic circuit, electronic circuit arrangement and method for p...
- Patent number 8,085,518
- Issue date Dec 27, 2011
- Infineon Technologies AG
- Nirmal Chaudhary
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Transistor with dopant-bearing metal in source and drain
- Patent number 7,446,379
- Issue date Nov 4, 2008
- Infineon Technologies AG
- Hong-Jyh Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate electrode for FinFET device
- Patent number 7,094,650
- Issue date Aug 22, 2006
- Infineon Technologies AG
- Nirmal Chaudhary
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor with dopant-bearing metal in source and drain
- Patent number 6,921,691
- Issue date Jul 26, 2005
- Infineon Technologies AG
- Hong-Jyh Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned STI process using nitride hard mask
- Patent number 6,551,874
- Issue date Apr 22, 2003
- Infineon Technologies, AG
- John Pohl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low temperature carbon rich oxy-nitride for improved RIE selectivity
- Patent number 6,486,015
- Issue date Nov 26, 2002
- Infineon Technologies AG
- Nirmal Chaudhary
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and manufacturing method
- Patent number 6,365,328
- Issue date Apr 2, 2002
- Infineon Technologies North America Corp.
- Hua Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for performing planarization and recess etches and apparatu...
- Patent number 6,232,233
- Issue date May 15, 2001
- Siemens Aktiengesellschaft
- Nirmal Chaudhary
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dry process for cleaning residues/polymers after metal etch
- Patent number 6,184,134
- Issue date Feb 6, 2001
- Infineon Technologies North America Corp.
- Nirmal Chaudhary
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Transistor with Dopant-Bearing Metal in Source and Drain
- Publication number 20090026555
- Publication date Jan 29, 2009
- Hong-Jyh Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE ELECTRODE FOR FINFET DEVICE
- Publication number 20060160312
- Publication date Jul 20, 2006
- Nirmal Chaudhary
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Transistor with dopant-bearing metal in source and drain
- Publication number 20050205896
- Publication date Sep 22, 2005
- Hong-Jyh Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Self-aligned STI process using nitride hard mask
- Publication number 20030045051
- Publication date Mar 6, 2003
- Infineon Technologies North America Corp.
- John Pohl
- H01 - BASIC ELECTRIC ELEMENTS

Nirmal Chaudhary

Person

Patents Grantslast 30 patents

Transistor with dopant-bearing metal in source and drain

Electronic circuit, electronic circuit arrangement and method for p...

Transistor with dopant-bearing metal in source and drain

Gate electrode for FinFET device

Transistor with dopant-bearing metal in source and drain

Self-aligned STI process using nitride hard mask

Low temperature carbon rich oxy-nitride for improved RIE selectivity

Semiconductor structure and manufacturing method

Methods for performing planarization and recess etches and apparatu...

Dry process for cleaning residues/polymers after metal etch

Patents Applicationslast 30 patents

Transistor with Dopant-Bearing Metal in Source and Drain

GATE ELECTRODE FOR FINFET DEVICE

Transistor with dopant-bearing metal in source and drain

Self-aligned STI process using nitride hard mask