Niti Goel

Person

Austin, TX, US

People

Patents Grantslast 30 patents

Information Patent Grant
Cladding layer epitaxy via template engineering for heterogeneous i...
- Patent number 10,693,008
- Issue date Jun 23, 2020
- Intel Corporation
- Niloy Mukherjee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective epitaxially grown III-V materials based devices
- Patent number 10,573,717
- Issue date Feb 25, 2020
- Intel Corporation
- Niti Goel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Making a defect free fin based device in lateral epitaxy overgrowth...
- Patent number 10,475,706
- Issue date Nov 12, 2019
- Intel Corporation
- Niti Goel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Techniques to achieve area reduction through co-optimizing logic co...
- Patent number 10,268,122
- Issue date Apr 23, 2019
- Intel Corporation
- Silvio E. Bou-Ghazale
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Non-silicon device heterolayers on patterned silicon substrate for...
- Patent number 10,249,490
- Issue date Apr 2, 2019
- Intel Corporation
- Niti Goel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Techniques for forming a compacted array of functional cells
- Patent number 10,217,732
- Issue date Feb 26, 2019
- Intel Corporation
- Rany T. Elsayed
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Selective epitaxially grown III-V materials based devices
- Patent number 10,181,518
- Issue date Jan 15, 2019
- Intel Corporation
- Niti Goel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods and structures to prevent sidewall defects during selective...
- Patent number 10,096,474
- Issue date Oct 9, 2018
- Intel Corporation
- Niloy Mukherjee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Decoupling capacitors and arrangements
- Patent number 10,026,686
- Issue date Jul 17, 2018
- Intel Corporation
- Silvio E. Bou-Ghazale
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned structures and methods for asymmetric GaN transistors...
- Patent number 9,923,087
- Issue date Mar 20, 2018
- Intel Corporation
- Sansaptak Dasgupta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
GE and III-V channel semiconductor devices having maximized complia...
- Patent number 9,905,651
- Issue date Feb 27, 2018
- Intel Corporation
- Ravi Pillarisetty
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Conductivity improvements for III-V semiconductor devices
- Patent number 9,899,505
- Issue date Feb 20, 2018
- Intel Corporation
- Marko Radosavljevic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanoscale structure with epitaxial film having a recessed bottom po...
- Patent number 9,865,684
- Issue date Jan 9, 2018
- Intel Corporation
- Benjamin Chu-Kung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming hetero-layers with reduced surface roughness and...
- Patent number 9,711,591
- Issue date Jul 18, 2017
- Intel Corporation
- Niloy Mukherjee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods and structures to prevent sidewall defects during selective...
- Patent number 9,698,013
- Issue date Jul 4, 2017
- Intel Corporation
- Niloy Mukherjee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrating VLSI-compatible fin structures with selective epitaxial...
- Patent number 9,685,381
- Issue date Jun 20, 2017
- Intel Corporation
- Niti Goel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of containing defects for non-silicon device engineering
- Patent number 9,666,583
- Issue date May 30, 2017
- Intel Corporation
- Niti Goel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods to enhance doping concentration in near-surface layers of s...
- Patent number 9,653,559
- Issue date May 16, 2017
- Intel Corporation
- Niloy Mukherjee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective epitaxially grown III-V materials based devices
- Patent number 9,640,622
- Issue date May 2, 2017
- Intel Corporation
- Niti Goel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-silicon device heterolayers on patterned silicon substrate for...
- Patent number 9,640,537
- Issue date May 2, 2017
- Intel Corporation
- Niti Goel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench confined epitaxially grown device layer(s)
- Patent number 9,634,007
- Issue date Apr 25, 2017
- Intel Corporation
- Ravi Pillarisetty
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Self-aligned structures and methods for asymmetric GaN transistors...
- Patent number 9,590,069
- Issue date Mar 7, 2017
- Intel Corporation
- Sansaptak Dasgupta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Making a defect free fin based device in lateral epitaxy overgrowth...
- Patent number 9,583,396
- Issue date Feb 28, 2017
- Intel Corporation
- Niti Goel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ge and III-V channel semiconductor devices having maximized complia...
- Patent number 9,570,614
- Issue date Feb 14, 2017
- Intel Corporation
- Ravi Pillarisetty
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lattice mismatched hetero-epitaxial film
- Patent number 9,391,181
- Issue date Jul 12, 2016
- Intel Corporation
- Benjamin Chu-Kung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of containing defects for non-silicon device engineering
- Patent number 9,112,028
- Issue date Aug 18, 2015
- Intel Corporation
- Niti Goel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned structures and methods for asymmetric GaN transistors...
- Patent number 9,099,490
- Issue date Aug 4, 2015
- Intel Corporation
- Sansaptak Dasgupta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of containing defects for non-silicon device engineering
- Patent number 9,054,190
- Issue date Jun 9, 2015
- Intel Corporation
- Niti Goel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Conductivity improvements for III-V semiconductor devices
- Patent number 8,936,976
- Issue date Jan 20, 2015
- Intel Corporation
- Marko Radosavljevic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Defect transferred and lattice mismatched epitaxial film
- Patent number 8,872,225
- Issue date Oct 28, 2014
- Intel Corporation
- Benjamin Chu-Kung
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SELECTIVE EPITAXIALLY GROWN III-V MATERIALS BASED DEVICES
- Publication number 20190088747
- Publication date Mar 21, 2019
- Intel Corporation
- Niti GOEL
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS AND STRUCTURES TO PREVENT SIDEWALL DEFECTS DURING SELECTIVE...
- Publication number 20170256408
- Publication date Sep 7, 2017
- Intel Corporation
- Niloy MUKHERJEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATING VLSI-COMPATIBLE FIN STRUCTURES WITH SELECTIVE EPITAXIAL...
- Publication number 20170250182
- Publication date Aug 31, 2017
- Intel Corporation
- Niti Goel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE EPITAXIALLY GROWN III-V MATERIALS BASED DEVICES
- Publication number 20170194142
- Publication date Jul 6, 2017
- Intel Corporation
- Niti GOEL
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-SILICON DEVICE HETEROLAYERS ON PATTERNED SILICON SUBSTRATE FOR...
- Publication number 20170186598
- Publication date Jun 29, 2017
- Intel Corporation
- Niti GOEL
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH CONFINED EPITAXIALLY GROWN DEVICE LAYER(S)
- Publication number 20170162453
- Publication date Jun 8, 2017
- Intel Corporation
- Ravi Pillarisetty
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAKING A DEFECT FREE FIN BASED DEVICE IN LATERAL EPITAXY OVERGROWTH...
- Publication number 20170154981
- Publication date Jun 1, 2017
- Intel Corporation
- Niti Goel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DECOUPLING CAPACITORS AND ARRANGEMENTS
- Publication number 20170148728
- Publication date May 25, 2017
- Intel Corporation
- Silvio E. BOU-GHAZALE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED STRUCTURES AND METHODS FOR ASYMMETRIC GAN TRANSISTORS...
- Publication number 20170133497
- Publication date May 11, 2017
- Intel Corporation
- Sansaptak Dasgupta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GE AND III-V CHANNEL SEMICONDUCTOR DEVICES HAVING MAXIMIZED COMPLIA...
- Publication number 20170125524
- Publication date May 4, 2017
- Intel Corporation
- RAVI PILLARISETTY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TECHNIQUES FOR FORMING INTEGRATED PASSIVE DEVICES
- Publication number 20170077050
- Publication date Mar 16, 2017
- Intel Corporation
- RANY T. ELSAYED
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TECHNIQUES TO ACHIEVE AREA REDUCTION THROUGH CO-OPTIMIZING LOGIC CO...
- Publication number 20170023863
- Publication date Jan 26, 2017
- Intel Corporation
- SILVIO E. BOU-GHAZALE
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
TECHNIQUES FOR FORMING A COMPACTED ARRAY OF FUNCTIONAL CELLS
- Publication number 20170018543
- Publication date Jan 19, 2017
- Intel Corporation
- Rany T. ELSAYED
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-SILICON DEVICE HETEROLAYERS ON PATTERNED SILICON SUBSTRATE FOR...
- Publication number 20160211263
- Publication date Jul 21, 2016
- Intel Corporation
- Niti GOEL
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IMPROVED CLADDING LAYER EPITAXY VIA TEMPLATE ENGINEERING FOR HETERO...
- Publication number 20160204263
- Publication date Jul 14, 2016
- Niloy MUKHERJEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE EPITAXIALLY GROWN III-V MATERIALS BASED DEVICES
- Publication number 20160204208
- Publication date Jul 14, 2016
- Intel Corporation
- Niti GOEL
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAKING A DEFECT FREE FIN BASED DEVICE IN LATERAL EPITAXY OVERGROWTH...
- Publication number 20160204036
- Publication date Jul 14, 2016
- Intel Corporation
- Niti Goel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATING VLSI-COMPATIBLE FIN STRUCTURES WITH SELECTIVE EPITAXIAL...
- Publication number 20160204037
- Publication date Jul 14, 2016
- Intel Corporation
- Niti Goel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Ge and III-V Channel Semiconductor Devices having Maximized Complia...
- Publication number 20160204246
- Publication date Jul 14, 2016
- Intel Corporation
- RAVI PILLARISETTY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS AND STRUCTURES TO PREVENT SIDEWALL DEFECTS DURING SELECTIVE...
- Publication number 20160181099
- Publication date Jun 23, 2016
- Intel Corporation
- Niloy MUKHERJEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED STRUCTURES AND METHODS FOR ASYMMETRIC GAN TRANSISTORS...
- Publication number 20150318375
- Publication date Nov 5, 2015
- Intel Corporation
- Sansaptak Dasgupta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF CONTAINING DEFECTS FOR NON-SILICON DEVICE ENGINEERING
- Publication number 20150270265
- Publication date Sep 24, 2015
- Intel Corporation
- Niti Goel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONDUCTIVITY IMPROVEMENTS FOR III-V SEMICONDUCTOR DEVICES
- Publication number 20150123171
- Publication date May 7, 2015
- MARKO RADOSAVLJEVIC
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH CONFINED EPITAXIALLY GROWN DEVICE LAYER(S)
- Publication number 20140291726
- Publication date Oct 2, 2014
- Ravi PILLARISETTY
- B82 - NANO-TECHNOLOGY
Information Patent Application
METHODS OF CONTAINING DEFECTS FOR NON-SILICON DEVICE ENGINEERING
- Publication number 20140231871
- Publication date Aug 21, 2014
- Intel Corporation
- Niti Goel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING HETERO-LAYERS WITH REDUCED SURFACE ROUGHNESS AND...
- Publication number 20140203326
- Publication date Jul 24, 2014
- Niloy Mukherjee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Defect Transferred and Lattice Mismatched Epitaxial Film
- Publication number 20140175512
- Publication date Jun 26, 2014
- BENJAMIN CHU-KUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Lattice Mismatched Hetero-Epitaxial Film
- Publication number 20140175509
- Publication date Jun 26, 2014
- BENJAMIN CHU-KUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAXIAL FILM GROWTH ON PATTERNED SUBSTRATE
- Publication number 20140175378
- Publication date Jun 26, 2014
- Niti Goel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH CONFINED EPITAXIALLY GROWN DEVICE LAYER(S)
- Publication number 20140091360
- Publication date Apr 3, 2014
- Ravi PILLARISETTY
- B82 - NANO-TECHNOLOGY

Person

Patents Grantslast 30 patents

Cladding layer epitaxy via template engineering for heterogeneous i...

Selective epitaxially grown III-V materials based devices

Making a defect free fin based device in lateral epitaxy overgrowth...

Techniques to achieve area reduction through co-optimizing logic co...

Non-silicon device heterolayers on patterned silicon substrate for...

Techniques for forming a compacted array of functional cells

Selective epitaxially grown III-V materials based devices

Methods and structures to prevent sidewall defects during selective...

Decoupling capacitors and arrangements

Self-aligned structures and methods for asymmetric GaN transistors...

GE and III-V channel semiconductor devices having maximized complia...

Conductivity improvements for III-V semiconductor devices

Nanoscale structure with epitaxial film having a recessed bottom po...

Methods of forming hetero-layers with reduced surface roughness and...

Methods and structures to prevent sidewall defects during selective...

Integrating VLSI-compatible fin structures with selective epitaxial...

Methods of containing defects for non-silicon device engineering

Methods to enhance doping concentration in near-surface layers of s...

Selective epitaxially grown III-V materials based devices

Non-silicon device heterolayers on patterned silicon substrate for...

Trench confined epitaxially grown device layer(s)

Self-aligned structures and methods for asymmetric GaN transistors...

Making a defect free fin based device in lateral epitaxy overgrowth...

Ge and III-V channel semiconductor devices having maximized complia...

Lattice mismatched hetero-epitaxial film

Methods of containing defects for non-silicon device engineering

Self-aligned structures and methods for asymmetric GaN transistors...

Methods of containing defects for non-silicon device engineering

Conductivity improvements for III-V semiconductor devices

Defect transferred and lattice mismatched epitaxial film

Patents Applicationslast 30 patents

SELECTIVE EPITAXIALLY GROWN III-V MATERIALS BASED DEVICES

METHODS AND STRUCTURES TO PREVENT SIDEWALL DEFECTS DURING SELECTIVE...

INTEGRATING VLSI-COMPATIBLE FIN STRUCTURES WITH SELECTIVE EPITAXIAL...

SELECTIVE EPITAXIALLY GROWN III-V MATERIALS BASED DEVICES

NON-SILICON DEVICE HETEROLAYERS ON PATTERNED SILICON SUBSTRATE FOR...

TRENCH CONFINED EPITAXIALLY GROWN DEVICE LAYER(S)

MAKING A DEFECT FREE FIN BASED DEVICE IN LATERAL EPITAXY OVERGROWTH...

DECOUPLING CAPACITORS AND ARRANGEMENTS

SELF-ALIGNED STRUCTURES AND METHODS FOR ASYMMETRIC GAN TRANSISTORS...

GE AND III-V CHANNEL SEMICONDUCTOR DEVICES HAVING MAXIMIZED COMPLIA...

TECHNIQUES FOR FORMING INTEGRATED PASSIVE DEVICES

TECHNIQUES TO ACHIEVE AREA REDUCTION THROUGH CO-OPTIMIZING LOGIC CO...

TECHNIQUES FOR FORMING A COMPACTED ARRAY OF FUNCTIONAL CELLS

NON-SILICON DEVICE HETEROLAYERS ON PATTERNED SILICON SUBSTRATE FOR...

IMPROVED CLADDING LAYER EPITAXY VIA TEMPLATE ENGINEERING FOR HETERO...

SELECTIVE EPITAXIALLY GROWN III-V MATERIALS BASED DEVICES

MAKING A DEFECT FREE FIN BASED DEVICE IN LATERAL EPITAXY OVERGROWTH...

INTEGRATING VLSI-COMPATIBLE FIN STRUCTURES WITH SELECTIVE EPITAXIAL...

Ge and III-V Channel Semiconductor Devices having Maximized Complia...

METHODS AND STRUCTURES TO PREVENT SIDEWALL DEFECTS DURING SELECTIVE...

SELF-ALIGNED STRUCTURES AND METHODS FOR ASYMMETRIC GAN TRANSISTORS...

METHODS OF CONTAINING DEFECTS FOR NON-SILICON DEVICE ENGINEERING

CONDUCTIVITY IMPROVEMENTS FOR III-V SEMICONDUCTOR DEVICES

TRENCH CONFINED EPITAXIALLY GROWN DEVICE LAYER(S)

METHODS OF CONTAINING DEFECTS FOR NON-SILICON DEVICE ENGINEERING

METHODS OF FORMING HETERO-LAYERS WITH REDUCED SURFACE ROUGHNESS AND...

Defect Transferred and Lattice Mismatched Epitaxial Film

Lattice Mismatched Hetero-Epitaxial Film

EPITAXIAL FILM GROWTH ON PATTERNED SUBSTRATE

TRENCH CONFINED EPITAXIALLY GROWN DEVICE LAYER(S)