Nityan NAIR

Person

Portland, OR, US

People

Patents Applicationslast 30 patents

Information Patent Application
INTEGRATED CIRCUIT STRUCTURES HAVING BACKSIDE HIGH
- Publication number 20240213140
- Publication date Jun 27, 2024
- Intel Corporation
- Han Wui THEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE (GAN) DEVICES WITH THROUGH-SILICON VIAS
- Publication number 20240213118
- Publication date Jun 27, 2024
- Intel Corporation
- Han Wui THEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SERIAL DIRECTED SELF-ASSEMBLY (DSA) PROCESSES FOR FORMING METAL LAY...
- Publication number 20240203868
- Publication date Jun 20, 2024
- Intel Corporation
- Gurpreet Singh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE (GAN) LAYER TRANSFER FOR INTEGRATED CIRCUIT TECHNOLOGY
- Publication number 20230090106
- Publication date Mar 23, 2023
- Intel Corporation
- Han Wui THEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE (GAN) INTEGRATED CIRCUIT TECHNOLOGY WITH OPTICAL CO...
- Publication number 20230081460
- Publication date Mar 16, 2023
- Intel Corporation
- Han Wui THEN
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
GALLIUM NITRIDE (GAN) INTEGRATED CIRCUIT TECHNOLOGY WITH MULTI-LAYE...
- Publication number 20230069054
- Publication date Mar 2, 2023
- Intel Corporation
- Souvik GHOSH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE (GAN) INTEGRATED CIRCUIT TECHNOLOGY
- Publication number 20230047449
- Publication date Feb 16, 2023
- Intel Corporation
- Nicole K. THOMAS
- H01 - BASIC ELECTRIC ELEMENTS

Nityan NAIR

Person

Patents Applicationslast 30 patents

INTEGRATED CIRCUIT STRUCTURES HAVING BACKSIDE HIGH

GALLIUM NITRIDE (GAN) DEVICES WITH THROUGH-SILICON VIAS

SERIAL DIRECTED SELF-ASSEMBLY (DSA) PROCESSES FOR FORMING METAL LAY...

GALLIUM NITRIDE (GAN) LAYER TRANSFER FOR INTEGRATED CIRCUIT TECHNOLOGY

GALLIUM NITRIDE (GAN) INTEGRATED CIRCUIT TECHNOLOGY WITH OPTICAL CO...

GALLIUM NITRIDE (GAN) INTEGRATED CIRCUIT TECHNOLOGY WITH MULTI-LAYE...

GALLIUM NITRIDE (GAN) INTEGRATED CIRCUIT TECHNOLOGY