Noboru Ichinose

Person

Yohohama, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Light emitting element and method of making same
- Patent number 9,117,974
- Issue date Aug 25, 2015
- Koha Co., Ltd.
- Noboru Ichinose
- C30 - CRYSTAL GROWTH
Information Patent Grant
Light emitting element and method of making same
- Patent number 8,791,466
- Issue date Jul 29, 2014
- Koha Co., Ltd.
- Noboru Ichinose
- C30 - CRYSTAL GROWTH
Information Patent Grant
β-Ga2O3 single crystal growing method including crystal growth method
- Patent number 8,747,553
- Issue date Jun 10, 2014
- Waseda University
- Noboru Ichinose
- C30 - CRYSTAL GROWTH
Information Patent Grant
Semiconductor layer
- Patent number 8,674,399
- Issue date Mar 18, 2014
- Koha Co., Ltd.
- Noboru Ichinose
- C30 - CRYSTAL GROWTH
Information Patent Grant
Light emitting element and method of making same
- Patent number 8,450,747
- Issue date May 28, 2013
- Koha Co., Ltd.
- Noboru Ichinose
- C30 - CRYSTAL GROWTH
Information Patent Grant
β-Ga2O3 single crystal growing method, thin-film single crystal gro...
- Patent number 8,262,796
- Issue date Sep 11, 2012
- Waseda University
- Noboru Ichinose
- C30 - CRYSTAL GROWTH
Information Patent Grant
Semiconductor layer with a Ga2O3 system
- Patent number 7,977,673
- Issue date Jul 12, 2011
- Koha Co., Ltd.
- Noboru Ichinose
- C30 - CRYSTAL GROWTH
Information Patent Grant
Ga2O3 semiconductor device
- Patent number 7,800,105
- Issue date Sep 21, 2010
- Waseda University
- Noboru Ichinose
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for controlling conductivity of Ga2O3single crystal
- Patent number 7,727,865
- Issue date Jun 1, 2010
- Waseda University
- Noboru Ichinose
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
β-Ga2O3 single crystal growing method, thin-film single crystal gro...
- Patent number 7,713,353
- Issue date May 11, 2010
- Waseda University
- Noboru Ichinose
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light emitting element and method of making same
- Patent number 7,629,615
- Issue date Dec 8, 2009
- Koha Co., Ltd.
- Noboru Ichinose
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light emitting element and method of making same
- Patent number 7,608,472
- Issue date Oct 27, 2009
- Koha Co., Ltd.
- Noboru Ichinose
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
β-Ga2O3 single crystal growing method, thin-film single crystal gro...
- Patent number 7,393,411
- Issue date Jul 1, 2008
- Waseda University
- Noboru Ichinose
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light emitting element and method of making same
- Patent number 7,319,249
- Issue date Jan 15, 2008
- Koha Co., Inc.
- Noboru Ichinose
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fluoride single crystal for detecting radiation, scintillator and r...
- Patent number 7,060,982
- Issue date Jun 13, 2006
- Hokushin Corporation
- Noboru Ichinose
- G01 - MEASURING TESTING
Information Patent Grant
Light emitting element and method of making same
- Patent number 6,977,397
- Issue date Dec 20, 2005
- Koha Co., Ltd.
- Noboru Ichinose
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thermoelectric conversion material and thermoelectric conversion de...
- Patent number 6,777,609
- Issue date Aug 17, 2004
- Hokushin Corporation
- Noboru Ichinose
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Pressure sensor
- Patent number 5,693,886
- Issue date Dec 2, 1997
- Nippon Dyne-a-mat Corp.
- Sadao Seimiya
- G01 - MEASURING TESTING
Information Patent Grant
Method of producing fluorapatite and a moisture sensitive resistor...
- Patent number 4,971,739
- Issue date Nov 20, 1990
- Nichia Kagaku Kogyo K.K.
- Noboru Ichinose
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Method of producing fluorapatite
- Patent number 4,855,118
- Issue date Aug 8, 1989
- Nichia Kagaku Kogyo K.K.
- Noboru Ichinose
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Method of manufacturing a voltage-nonlinear resistor
- Patent number 4,338,223
- Issue date Jul 6, 1982
- Marcon Electronics Co., Ltd.
- Yuji Yokomizo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Oxide negative resistance element
- Patent number 4,336,163
- Issue date Jun 22, 1982
- Tokyo Shibaura Electric Co., Ltd.
- Noboru Ichinose
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gas detecting element
- Patent number 4,259,292
- Issue date Mar 31, 1981
- Tokyo Shibaura Electric Co., Ltd.
- Noboru Ichinose
- G01 - MEASURING TESTING
Information Patent Grant
Gas leak-detecting apparatus
- Patent number 4,170,770
- Issue date Oct 9, 1979
- Tokyo Shibaura Electric Co., Ltd.
- Noboru Ichinose
- G08 - SIGNALLING
Information Patent Grant
Transparent ceramics
- Patent number 4,131,479
- Issue date Dec 26, 1978
- Tokyo Shibaura Electric Co., Ltd.
- Noboru Ichinose
- C04 - CEMENTS CONCRETE ARTIFICIAL STONE CERAMICS REFRACTORIES

Patents Applicationslast 30 patents

Information Patent Application
LIGHT EMITTING ELEMENT AND METHOD OF MAKING SAME
- Publication number 20140306237
- Publication date Oct 16, 2014
- Noboru Ichinose
- C30 - CRYSTAL GROWTH
Information Patent Application
LIGHT EMITTING ELEMENT AND METHOD OF MAKING SAME
- Publication number 20130248902
- Publication date Sep 26, 2013
- Koha Co., Ltd.
- Noboru Ichinose
- C30 - CRYSTAL GROWTH
Information Patent Application
beta-Ga2O3 SINGLE CRYSTAL GROWING METHOD, THIN-FILM SINGLE CRYSTAL...
- Publication number 20120304918
- Publication date Dec 6, 2012
- Noboru Ichinose
- C30 - CRYSTAL GROWTH
Information Patent Application
Beta-Ga2O3 single crystal growing method, thin-film single crystal...
- Publication number 20100229789
- Publication date Sep 16, 2010
- Waseda University
- Noboru Ichinose
- C30 - CRYSTAL GROWTH
Information Patent Application
LIGHT EMITTING ELEMENT AND METHOD OF MAKING SAME
- Publication number 20100038652
- Publication date Feb 18, 2010
- Koha Co., Ltd.
- Noboru Ichinose
- C30 - CRYSTAL GROWTH
Information Patent Application
Beta-Ga2O3 single crystal growing method, thin-film single crystal...
- Publication number 20080265264
- Publication date Oct 30, 2008
- Waseda University
- Noboru Ichinose
- C30 - CRYSTAL GROWTH
Information Patent Application
LIGHT EMITTING ELEMENT AND METHOD OF MAKING SAME
- Publication number 20080237607
- Publication date Oct 2, 2008
- Koha Co., Ltd.
- Noboru Ichinose
- C30 - CRYSTAL GROWTH
Information Patent Application
Ga2o3 Semiconductor Device
- Publication number 20080142795
- Publication date Jun 19, 2008
- Waseda University
- Noboru Ichinose
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Light emitting element and method of making same
- Publication number 20080070337
- Publication date Mar 20, 2008
- Koha Co., Ltd.
- Noboru Ichinose
- C30 - CRYSTAL GROWTH
Information Patent Application
Method for Producing P-Type Ga2o3 Film and Method for Producing Pn...
- Publication number 20080038906
- Publication date Feb 14, 2008
- Noboru Ichinose
- C30 - CRYSTAL GROWTH
Information Patent Application
Method for controlling conductivity of ga2o3 single crystal
- Publication number 20070166967
- Publication date Jul 19, 2007
- Noboru Ichinose
- C30 - CRYSTAL GROWTH
Information Patent Application
Semiconductor layer
- Publication number 20060289860
- Publication date Dec 28, 2006
- Noboru Ichinose
- C30 - CRYSTAL GROWTH
Information Patent Application
Metal halide for radiation detection, method for production thereof...
- Publication number 20060163484
- Publication date Jul 27, 2006
- HOKUSHIN CORPORATION
- Noboru Ichinose
- C30 - CRYSTAL GROWTH
Information Patent Application
ß-Ga2o3 single crystal growing method, thin-film single crystal gro...
- Publication number 20060150891
- Publication date Jul 13, 2006
- Noboru Ichinose
- C30 - CRYSTAL GROWTH
Information Patent Application
Fluoride single-crystal material for thermoluminescence dosimeter,...
- Publication number 20060033025
- Publication date Feb 16, 2006
- HOKUSHIN CORPORATION
- Noboru Ichinose
- C30 - CRYSTAL GROWTH
Information Patent Application
Light emitting element and method of making same
- Publication number 20060001031
- Publication date Jan 5, 2006
- Koha Co., Ltd.
- Noboru Ichinose
- C30 - CRYSTAL GROWTH
Information Patent Application
Fluoride single crystal for detecting radiation, scintillator and r...
- Publication number 20050061982
- Publication date Mar 24, 2005
- HOKUSHIN CORPORATION
- Noboru Ichinose
- G01 - MEASURING TESTING
Information Patent Application
Light emitting element and method of making same
- Publication number 20040007708
- Publication date Jan 15, 2004
- Koha Co., Ltd.
- Noboru Ichinose
- C30 - CRYSTAL GROWTH
Information Patent Application
Thermoelectric conversion material and thermoelectric conversion de...
- Publication number 20020157699
- Publication date Oct 31, 2002
- Noboru Ichinose
- C01 - INORGANIC CHEMISTRY

Noboru Ichinose

Person

Patents Grantslast 30 patents

Light emitting element and method of making same

Light emitting element and method of making same

β-Ga2O3 single crystal growing method including crystal growth method

Semiconductor layer

Light emitting element and method of making same

β-Ga2O3 single crystal growing method, thin-film single crystal gro...

Semiconductor layer with a Ga2O3 system

Ga2O3 semiconductor device

Method for controlling conductivity of Ga2O3single crystal

β-Ga2O3 single crystal growing method, thin-film single crystal gro...

Light emitting element and method of making same

Light emitting element and method of making same

β-Ga2O3 single crystal growing method, thin-film single crystal gro...

Light emitting element and method of making same

Fluoride single crystal for detecting radiation, scintillator and r...

Light emitting element and method of making same

Thermoelectric conversion material and thermoelectric conversion de...

Pressure sensor

Method of producing fluorapatite and a moisture sensitive resistor...

Method of producing fluorapatite

Method of manufacturing a voltage-nonlinear resistor

Oxide negative resistance element

Gas detecting element

Gas leak-detecting apparatus

Transparent ceramics

Patents Applicationslast 30 patents

LIGHT EMITTING ELEMENT AND METHOD OF MAKING SAME

LIGHT EMITTING ELEMENT AND METHOD OF MAKING SAME

beta-Ga2O3 SINGLE CRYSTAL GROWING METHOD, THIN-FILM SINGLE CRYSTAL...

Beta-Ga2O3 single crystal growing method, thin-film single crystal...

LIGHT EMITTING ELEMENT AND METHOD OF MAKING SAME

Beta-Ga2O3 single crystal growing method, thin-film single crystal...

LIGHT EMITTING ELEMENT AND METHOD OF MAKING SAME

Ga2o3 Semiconductor Device

Light emitting element and method of making same

Method for Producing P-Type Ga2o3 Film and Method for Producing Pn...

Method for controlling conductivity of ga2o3 single crystal

Semiconductor layer

Metal halide for radiation detection, method for production thereof...

ß-Ga2o3 single crystal growing method, thin-film single crystal gro...

Fluoride single-crystal material for thermoluminescence dosimeter,...

Light emitting element and method of making same

Fluoride single crystal for detecting radiation, scintillator and r...

Light emitting element and method of making same

Thermoelectric conversion material and thermoelectric conversion de...