Noboru MATSUDA

Person

Kanagawa-ken, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device
- Patent number RE48259
- Issue date Oct 13, 2020
- Kabushiki Kaisha Toshiba
- Kouta Tomita
Information Patent Grant
Semiconductor device
- Patent number 8,299,523
- Issue date Oct 30, 2012
- Kabushiki Kaisha Toshiba
- Kouta Tomita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing the same
- Patent number 8,269,272
- Issue date Sep 18, 2012
- Kabushiki Kaisha Toshiba
- Kouta Tomita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench gate semiconductor device with a reduction in switching loss
- Patent number 7,268,392
- Issue date Sep 11, 2007
- Kabushiki Kaisha Toshiba
- Hironobu Shibata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power MOS transistor having trench gate
- Patent number 7,227,223
- Issue date Jun 5, 2007
- Kabushiki Kaisha Toshiba
- Noboru Matsuda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device
- Patent number 7,176,521
- Issue date Feb 13, 2007
- Kabushiki Kaisha Toshiba
- Keiko Kawamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a trench-gate structure
- Patent number 7,049,657
- Issue date May 23, 2006
- Kabushiki Kaisha Toshiba
- Noboru Matsuda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 7,045,858
- Issue date May 16, 2006
- Kabushiki Kaisha Toshiba
- Noboru Matsuda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 6,060,747
- Issue date May 9, 2000
- Kabushiki Kaisha Toshiba
- Hideki Okumura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench-type schottky-barrier diode
- Patent number 5,917,228
- Issue date Jun 29, 1999
- Kabushiki Kaisha Toshiba
- Noboru Matsuda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a vertical transistor having a trench gate
- Patent number 5,770,514
- Issue date Jun 23, 1998
- Kabushiki Kaisha Toshiba
- Noboru Matsuda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device having a buried insu...
- Patent number 5,726,088
- Issue date Mar 10, 1998
- Kabushiki Kaisha Toshiba
- Satoshi Yanagiya
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a buried insulated gate
- Patent number 5,610,422
- Issue date Mar 11, 1997
- Kabushiki Kaisha Toshiba
- Satoshi Yanagiya
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical power MOSFET and process of fabricating the same
- Patent number 5,578,508
- Issue date Nov 26, 1996
- Kabushiki Kaisha Toshiba
- Yoshiro Baba
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20120025306
- Publication date Feb 2, 2012
- Kabushiki Kaisha Toshiba
- Kouta Tomita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20110140197
- Publication date Jun 16, 2011
- Kabushiki Kaisha Toshiba
- Kouta Tomita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH TYPE POWER SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING...
- Publication number 20080230801
- Publication date Sep 25, 2008
- Atsushi MURAKOSHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Trench MIS device and method for manufacturing trench MIS device
- Publication number 20060091453
- Publication date May 4, 2006
- Kabushiki Kaisha Toshiba
- Noboru Matsuda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method of manufacturing same
- Publication number 20060086972
- Publication date Apr 27, 2006
- Kabushiki Kaisha Toshiba
- Hironobu Shibata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power semiconductor device
- Publication number 20050199953
- Publication date Sep 15, 2005
- Kabushiki Kaisha Toshiba
- Keiko Kawamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method of manufacturing the same
- Publication number 20050191810
- Publication date Sep 1, 2005
- Kabushiki Kaisha Toshiba
- Noboru Matsuda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and its manufacturing method
- Publication number 20040188756
- Publication date Sep 30, 2004
- Kabushiki Kaisha Toshiba
- Noboru Matsuda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power MOS transistor having trench gate
- Publication number 20040012051
- Publication date Jan 22, 2004
- Kabushiki Kaisha Toshiba
- Noboru Matsuda
- H01 - BASIC ELECTRIC ELEMENTS

Noboru MATSUDA

Person

Patents Grantslast 30 patents

Semiconductor device

Semiconductor device

Semiconductor device and method for manufacturing the same

Trench gate semiconductor device with a reduction in switching loss

Power MOS transistor having trench gate

Power semiconductor device

Semiconductor device having a trench-gate structure

Semiconductor device and method of manufacturing the same

Semiconductor device

Trench-type schottky-barrier diode

Method for manufacturing a vertical transistor having a trench gate

Method of manufacturing a semiconductor device having a buried insu...

Semiconductor device having a buried insulated gate

Vertical power MOSFET and process of fabricating the same

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

TRENCH TYPE POWER SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING...

Trench MIS device and method for manufacturing trench MIS device

Semiconductor device and method of manufacturing same

Power semiconductor device

Semiconductor device and method of manufacturing the same

Semiconductor device and its manufacturing method

Power MOS transistor having trench gate