Noboru Noda

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Hyogo, JP

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Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 7,170,113
- Issue date Jan 30, 2007
- Kabushiki Kaisha Toshiba
- Noboru Noda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-frequency semiconductor device
- Patent number 5,138,417
- Issue date Aug 11, 1992
- Kabushiki Kaisha Toshiba
- Noboru Noda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate structure for a MOS FET
- Patent number 4,924,281
- Issue date May 8, 1990
- Kabushiki Kaisha Toshiba
- Kazuo Endo
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Semiconductor device and method of manufacturing the same
- Publication number 20050001289
- Publication date Jan 6, 2005
- Kabushiki Kaisha Toshiba
- Noboru Noda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method of manufacturing the same
- Publication number 20040262714
- Publication date Dec 30, 2004
- Kabushiki Kaisha Toshiba
- Noboru Noda
- H01 - BASIC ELECTRIC ELEMENTS