Noboru Ohtani

Person

Tokyo, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Apparatus for manufacturing single-crystal silicon carbide
- Patent number 9,068,277
- Issue date Jun 30, 2015
- Nippon Steel & Sumitomo Metal Corporation
- Masashi Nakabayashi
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Semiconductor wafer manufacturing method, and semiconductor wafer
- Patent number 9,029,219
- Issue date May 12, 2015
- Kwansei Gakuin Educational Foundation
- Tadaaki Kaneko
- C30 - CRYSTAL GROWTH
Information Patent Grant
Light-transmitting electromagnetic-shielding laminate and method fo...
- Patent number 8,889,570
- Issue date Nov 18, 2014
- Mitsubishi Gas Chemical Company, Inc.
- Takatoshi Matsumura
- B32 - LAYERED PRODUCTS
Information Patent Grant
Monocrystalline silicon carbide ingot, monocrystalline silicon carb...
- Patent number 8,795,624
- Issue date Aug 5, 2014
- Nippon Steel & Sumitomo Metal Corporation
- Masashi Nakabayashi
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Monocrystalline silicon carbide ingot, monocrystalline silicon carb...
- Patent number 8,673,254
- Issue date Mar 18, 2014
- Nippon Steel & Sumitomo Metal Corporation
- Masashi Nakabayashi
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Silicon carbide single crystal, silicon carbide single crystal wafe...
- Patent number 8,491,719
- Issue date Jul 23, 2013
- Nippon Steel & Sumitomo Metal Corporation
- Masashi Nakabayashi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Monocrystalline silicon carbide ingot, monocrystalline silicon carb...
- Patent number 8,178,389
- Issue date May 15, 2012
- Nippon Steel Corporation
- Masashi Nakabayashi
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Light-transmitting electromagnetic wave-shielding material
- Patent number 8,063,391
- Issue date Nov 22, 2011
- Mitsubishi Gas Chemical Company, Inc.
- Takatoshi Matsumura
- B32 - LAYERED PRODUCTS
Information Patent Grant
SiC single-crystal substrate and method of producing SiC single-cry...
- Patent number 8,044,408
- Issue date Oct 25, 2011
- Nippon Steel Corporation
- Tatsuo Fujimoto
- C30 - CRYSTAL GROWTH
Information Patent Grant
Single-crystal silicon carbide ingot, and substrate and epitaxial w...
- Patent number 7,972,704
- Issue date Jul 5, 2011
- Nippon Steel Corporation
- Noboru Ohtani
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Silicon carbide single crystal and single crystal wafer
- Patent number 7,799,305
- Issue date Sep 21, 2010
- Nippon Steel Corporation
- Mitsuru Sawamura
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon carbide single crystal, silicon carbide single crystal wafe...
- Patent number 7,794,842
- Issue date Sep 14, 2010
- Nippon Steel Corporation
- Masashi Nakabayashi
- C30 - CRYSTAL GROWTH
Information Patent Grant
SiC single crystal and method for growth thereof
- Patent number 5,958,132
- Issue date Sep 28, 1999
- Nippon Steel Corporation
- Jun Takahashi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Dielectric thin film capacitor element
- Patent number 5,907,470
- Issue date May 25, 1999
- Sharp Kabushiki Kaisha
- Ryusuke Kita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of producing dielectric thin film element
- Patent number 5,856,242
- Issue date Jan 5, 1999
- Sharp Kabushiki Kaisha
- Hisako Arai
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Ferroelectric thin film, ferroelectric thin film covering substrate...
- Patent number 5,811,181
- Issue date Sep 22, 1998
- Sharp Kabushiki Kaisha
- Takeshi Kijima
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Waveguide type compact optical scanner and manufacturing method the...
- Patent number 5,747,796
- Issue date May 5, 1998
- Sharp Kabushiki Kaisha
- David Heard
- G02 - OPTICS
Information Patent Grant
Method for manufacturing thin film of composite metal-oxide dielectric
- Patent number 5,593,495
- Issue date Jan 14, 1997
- Sharp Kabushiki Kaisha
- Yoshiyuki Masuda
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
METHOD FOR TREATING SURFACE OF SILICON-CARBIDE SUBSTRATE
- Publication number 20160118257
- Publication date Apr 28, 2016
- KWANSEI GAKUIN EDUCATIONAL FOUNDATION
- Tadaaki Kaneko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING SILICON-CARBIDE SEMICONDUCTOR ELEMENT
- Publication number 20160111279
- Publication date Apr 21, 2016
- KWANSEI GAKUIN EDUCATIONAL FOUNDATION
- Tadaaki Kaneko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR WAFER MANUFACTURING METHOD, AND SEMICONDUCTOR WAFER
- Publication number 20140319539
- Publication date Oct 30, 2014
- TOYO TANSO CO., LTD
- Tadaaki Kaneko
- C30 - CRYSTAL GROWTH
Information Patent Application
MONOCRYSTALLINE SILICON CARBIDE INGOT, MONOCRYSTALLINE SILICON CARB...
- Publication number 20110180765
- Publication date Jul 28, 2011
- Masashi NAKABAYASHI
- C30 - CRYSTAL GROWTH
Information Patent Application
SIC SINGLE-CRYSTAL SUBSTRATE AND METHOD OF PRODUCING SIC SINGLE-CRY...
- Publication number 20100295059
- Publication date Nov 25, 2010
- NIPPON STEEL CORPORATION
- Tatsuo FUJIMOTO
- C30 - CRYSTAL GROWTH
Information Patent Application
SINGLE-CRYSTAL SILICON CARBIDE INGOT, AND SUBSTRATE AND EPITAXIAL W...
- Publication number 20100289033
- Publication date Nov 18, 2010
- Noboru Ohtani
- C30 - CRYSTAL GROWTH
Information Patent Application
LIGHT-TRANSMITTING ELECTROMAGNETIC-SHIELDING LAMINATE AND METHOD FO...
- Publication number 20100147578
- Publication date Jun 17, 2010
- Takatoshi Matsumura
- C08 - ORGANIC MACROMOLECULAR COMPOUNDS THEIR PREPARATION OR CHEMICAL WORKING-...
Information Patent Application
MONOCRYSTALLINE SILICON CARBIDE INGOT, MONOCRYSTALLINE SILICON CARB...
- Publication number 20100147212
- Publication date Jun 17, 2010
- Masashi NAKABAYASHI
- C30 - CRYSTAL GROWTH
Information Patent Application
Seed crystal consisting of silicon carbide single crystal and metho...
- Publication number 20100089311
- Publication date Apr 15, 2010
- NIPPON STEEL CORPORATION
- Noboru Ohtani
- C30 - CRYSTAL GROWTH
Information Patent Application
Seed crystal consisting of silicon carbide single crysatal and meth...
- Publication number 20100083897
- Publication date Apr 8, 2010
- NIPPON STEEL CORPORATION
- Noboru Ohtani
- C30 - CRYSTAL GROWTH
Information Patent Application
Low resistivity single crystal silicon carbide wafer
- Publication number 20100080956
- Publication date Apr 1, 2010
- Tatsuo Fujimoto
- C30 - CRYSTAL GROWTH
Information Patent Application
Silicon carbide single crystal, silicon carbide single crystal wafe...
- Publication number 20090255458
- Publication date Oct 15, 2009
- NIPPON STEEL CORPORATION
- Masashi Nakabayashi
- C30 - CRYSTAL GROWTH
Information Patent Application
APPARATUS FOR MANUFACTURING SINGLE-CRYSTAL SILICON CARBIDE
- Publication number 20090205565
- Publication date Aug 20, 2009
- Masashi Nakabayashi
- C30 - CRYSTAL GROWTH
Information Patent Application
Light-transmitting electromagnetic wave-shielding material
- Publication number 20080302981
- Publication date Dec 11, 2008
- MITSUBISHI GAS CHEMICAL COMPANY, INC.
- Takatoshi Matsumura
- G02 - OPTICS
Information Patent Application
Silicon Carbide Single Crystal, Silicon Carbide Single Crystal Wafe...
- Publication number 20080220232
- Publication date Sep 11, 2008
- Masashi Nakabayashi
- C30 - CRYSTAL GROWTH
Information Patent Application
Silicon Carbide Single Crystal And Single Crystal Wafer
- Publication number 20080038531
- Publication date Feb 14, 2008
- Mitsuru Sawamura
- C30 - CRYSTAL GROWTH
Information Patent Application
Seed crystal consisting of silicon carbide carbide single crystal a...
- Publication number 20080020212
- Publication date Jan 24, 2008
- NIPPON STEEL CORPORATION
- Noboru Ohtani
- C30 - CRYSTAL GROWTH
Information Patent Application
Monocrystalline Silicon Carbide Ingot, Monocrystalline Silicon Carb...
- Publication number 20070262322
- Publication date Nov 15, 2007
- NIPPON STEEL CORPORATION
- Masashi Nakabayashi
- C30 - CRYSTAL GROWTH
Information Patent Application
Seed crystal of silicon carbide single crystal and method for produ...
- Publication number 20050160965
- Publication date Jul 28, 2005
- NIPPON STEEL CORPORATION
- Noboru Ohtani
- C30 - CRYSTAL GROWTH

Noboru Ohtani

Person

Patents Grantslast 30 patents

Apparatus for manufacturing single-crystal silicon carbide

Semiconductor wafer manufacturing method, and semiconductor wafer

Light-transmitting electromagnetic-shielding laminate and method fo...

Monocrystalline silicon carbide ingot, monocrystalline silicon carb...

Monocrystalline silicon carbide ingot, monocrystalline silicon carb...

Silicon carbide single crystal, silicon carbide single crystal wafe...

Monocrystalline silicon carbide ingot, monocrystalline silicon carb...

Light-transmitting electromagnetic wave-shielding material

SiC single-crystal substrate and method of producing SiC single-cry...

Single-crystal silicon carbide ingot, and substrate and epitaxial w...

Silicon carbide single crystal and single crystal wafer

Silicon carbide single crystal, silicon carbide single crystal wafe...

SiC single crystal and method for growth thereof

Dielectric thin film capacitor element

Method of producing dielectric thin film element

Ferroelectric thin film, ferroelectric thin film covering substrate...

Waveguide type compact optical scanner and manufacturing method the...

Method for manufacturing thin film of composite metal-oxide dielectric

Patents Applicationslast 30 patents

METHOD FOR TREATING SURFACE OF SILICON-CARBIDE SUBSTRATE

METHOD FOR MANUFACTURING SILICON-CARBIDE SEMICONDUCTOR ELEMENT

SEMICONDUCTOR WAFER MANUFACTURING METHOD, AND SEMICONDUCTOR WAFER

MONOCRYSTALLINE SILICON CARBIDE INGOT, MONOCRYSTALLINE SILICON CARB...

SIC SINGLE-CRYSTAL SUBSTRATE AND METHOD OF PRODUCING SIC SINGLE-CRY...

SINGLE-CRYSTAL SILICON CARBIDE INGOT, AND SUBSTRATE AND EPITAXIAL W...

LIGHT-TRANSMITTING ELECTROMAGNETIC-SHIELDING LAMINATE AND METHOD FO...

MONOCRYSTALLINE SILICON CARBIDE INGOT, MONOCRYSTALLINE SILICON CARB...

Seed crystal consisting of silicon carbide single crystal and metho...

Seed crystal consisting of silicon carbide single crysatal and meth...

Low resistivity single crystal silicon carbide wafer

Silicon carbide single crystal, silicon carbide single crystal wafe...

APPARATUS FOR MANUFACTURING SINGLE-CRYSTAL SILICON CARBIDE

Light-transmitting electromagnetic wave-shielding material

Silicon Carbide Single Crystal, Silicon Carbide Single Crystal Wafe...

Silicon Carbide Single Crystal And Single Crystal Wafer

Seed crystal consisting of silicon carbide carbide single crystal a...

Monocrystalline Silicon Carbide Ingot, Monocrystalline Silicon Carb...

Seed crystal of silicon carbide single crystal and method for produ...