Noboru Takamure

Person

Kawasaki-shi, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Methods for forming doped silicon oxide thin films
- Patent number 11,302,527
- Issue date Apr 12, 2022
- ASM International N.V.
- Noboru Takamure
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for forming doped silicon oxide thin films
- Patent number 10,784,105
- Issue date Sep 22, 2020
- ASM International N.V.
- Noboru Takamure
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for forming doped silicon oxide thin films
- Patent number 10,510,530
- Issue date Dec 17, 2019
- ASM International N.V.
- Noboru Takamure
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for forming doped silicon oxide thin films
- Patent number 10,147,600
- Issue date Dec 4, 2018
- ASM International N.V.
- Noboru Takamure
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for forming doped silicon oxide thin films
- Patent number 9,875,893
- Issue date Jan 23, 2018
- ASM International N.V.
- Noboru Takamure
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Film forming apparatus, and method of manufacturing semiconductor d...
- Patent number 9,673,092
- Issue date Jun 6, 2017
- ASM IP Holding B.V.
- Ryu Nakano
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Methods for forming doped silicon oxide thin films
- Patent number 9,564,314
- Issue date Feb 7, 2017
- ASM International N.V.
- Noboru Takamure
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming Ti-containing film by PEALD using TDMAT or TDEAT
- Patent number 9,556,516
- Issue date Jan 31, 2017
- ASM IP Holding B.V.
- Noboru Takamure
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Methods for forming doped silicon oxide thin films
- Patent number 9,368,352
- Issue date Jun 14, 2016
- ASM International N.V.
- Noboru Takamure
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for forming doped silicon oxide thin films
- Patent number 9,153,441
- Issue date Oct 6, 2015
- ASM International, NV.
- Noboru Takamure
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming Si-containing film using two precursors by ALD
- Patent number 8,912,101
- Issue date Dec 16, 2014
- ASM IP Holding B.V.
- Naoto Tsuji
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Methods for forming doped silicon oxide thin films
- Patent number 8,679,958
- Issue date Mar 25, 2014
- ASM International N.V.
- Noboru Takamure
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of depositing dielectric film by ALD using precursor contain...
- Patent number 8,329,599
- Issue date Dec 11, 2012
- ASM Japan K.K.
- Atsuki Fukazawa
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for forming dielectric SiOCH film having chemical stability
- Patent number 7,807,566
- Issue date Oct 5, 2010
- ASM Japan K.K.
- Naoto Tsuji
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Patents Applicationslast 30 patents

Information Patent Application
METHODS FOR FORMING DOPED SILICON OXIDE THIN FILMS
- Publication number 20230031720
- Publication date Feb 2, 2023
- ASM INTERNATIONAL N.V.
- Noboru Takamure
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR FORMING DOPED SILICON OXIDE THIN FILMS
- Publication number 20200388487
- Publication date Dec 10, 2020
- ASM INTERNATIONAL N.V.
- Noboru Takamure
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR FORMING DOPED SILICON OXIDE THIN FILMS
- Publication number 20200185218
- Publication date Jun 11, 2020
- ASM INTERNATIONAL N.V.
- Noboru Takamure
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR FORMING DOPED SILICON OXIDE THIN FILMS
- Publication number 20190172708
- Publication date Jun 6, 2019
- ASM INTERNATIONAL N.V.
- Noboru Takamure
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR FORMING DOPED SILICON OXIDE THIN FILMS
- Publication number 20180211834
- Publication date Jul 26, 2018
- ASM INTERNATIONAL N.V.
- Noboru Takamure
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR FORMING DOPED SILICON OXIDE THIN FILMS
- Publication number 20170338111
- Publication date Nov 23, 2017
- ASM INTERNATIONAL N.V.
- Noboru Takamure
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR FORMING DOPED SILICON OXIDE THIN FILMS
- Publication number 20160196970
- Publication date Jul 7, 2016
- ASM INTERNATIONAL N.V.
- Noboru Takamure
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FILM FORMING APPARATUS, AND METHOD OF MANUFACTURING SEMICONDUCTOR D...
- Publication number 20150252479
- Publication date Sep 10, 2015
- ASM IP HOLDING B.V.
- Ryu NAKANO
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHODS FOR FORMING DOPED SILICON OXIDE THIN FILMS
- Publication number 20150147875
- Publication date May 28, 2015
- ASM INTERNATIONAL N.V.
- Noboru Takamure
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Forming Ti-Containing Film by PEALD using TDMAT or TDEAT
- Publication number 20150099072
- Publication date Apr 9, 2015
- ASM IP HOLDING B.V.
- Noboru Takamure
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHODS FOR FORMING DOPED SILICON OXIDE THIN FILMS
- Publication number 20150017794
- Publication date Jan 15, 2015
- ASM INTERNATIONAL N.V.
- Noboru Takamure
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Forming Si-Containing Film Using Two Precursors by ALD
- Publication number 20130244446
- Publication date Sep 19, 2013
- ASM IP HOLDING B.V.
- Naoto Tsuji
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Method for Forming Dielectric Film Containing Si-C bonds by Atomic...
- Publication number 20130224964
- Publication date Aug 29, 2013
- ASM IP HOLDING B.V.
- Atsuki Fukazawa
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHODS FOR FORMING DOPED SILICON OXIDE THIN FILMS
- Publication number 20130115763
- Publication date May 9, 2013
- ASM INTERNATIONAL N.V.
- Noboru Takamure
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Depositing Dielectric Film by ALD Using Precursor Contain...
- Publication number 20120214318
- Publication date Aug 23, 2012
- ASM JAPAN K.K.
- Atsuki Fukazawa
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD FOR FORMING DIELECTRIC SiOCH FILM HAVING CHEMICAL STABILITY
- Publication number 20090148964
- Publication date Jun 11, 2009
- ASM JAPAN K.K.
- Naoto Tsuji
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Noboru Takamure

Person

Patents Grantslast 30 patents

Methods for forming doped silicon oxide thin films

Methods for forming doped silicon oxide thin films

Methods for forming doped silicon oxide thin films

Methods for forming doped silicon oxide thin films

Methods for forming doped silicon oxide thin films

Film forming apparatus, and method of manufacturing semiconductor d...

Methods for forming doped silicon oxide thin films

Method for forming Ti-containing film by PEALD using TDMAT or TDEAT

Methods for forming doped silicon oxide thin films

Methods for forming doped silicon oxide thin films

Method for forming Si-containing film using two precursors by ALD

Methods for forming doped silicon oxide thin films

Method of depositing dielectric film by ALD using precursor contain...

Method for forming dielectric SiOCH film having chemical stability

Patents Applicationslast 30 patents

METHODS FOR FORMING DOPED SILICON OXIDE THIN FILMS

METHODS FOR FORMING DOPED SILICON OXIDE THIN FILMS

METHODS FOR FORMING DOPED SILICON OXIDE THIN FILMS

METHODS FOR FORMING DOPED SILICON OXIDE THIN FILMS

METHODS FOR FORMING DOPED SILICON OXIDE THIN FILMS

METHODS FOR FORMING DOPED SILICON OXIDE THIN FILMS

METHODS FOR FORMING DOPED SILICON OXIDE THIN FILMS

FILM FORMING APPARATUS, AND METHOD OF MANUFACTURING SEMICONDUCTOR D...

METHODS FOR FORMING DOPED SILICON OXIDE THIN FILMS

Method for Forming Ti-Containing Film by PEALD using TDMAT or TDEAT

METHODS FOR FORMING DOPED SILICON OXIDE THIN FILMS

Method for Forming Si-Containing Film Using Two Precursors by ALD

Method for Forming Dielectric Film Containing Si-C bonds by Atomic...

METHODS FOR FORMING DOPED SILICON OXIDE THIN FILMS

Method of Depositing Dielectric Film by ALD Using Precursor Contain...

METHOD FOR FORMING DIELECTRIC SiOCH FILM HAVING CHEMICAL STABILITY