Nobuhiro Kuwata

Person

Yokohama-shi, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Field effect transistor including a cap with a doped layer formed t...
- Patent number 5,532,505
- Issue date Jul 2, 1996
- Sumitomo Electric Industries, Ltd.
- Nobuhiro Kuwata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor and method of manufacturing the same
- Patent number 5,493,136
- Issue date Feb 20, 1996
- Sumitomo Electric Industries, Ltd.
- Ken-ichiro Matsuzaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with delta-doped layer in channel region
- Patent number 5,488,237
- Issue date Jan 30, 1996
- Sumitomo Electric Industries, Ltd.
- Nobuhiro Kuwata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and a method for fabricating the same
- Patent number 5,341,007
- Issue date Aug 23, 1994
- Sumitomo Electric Industries, Ltd.
- Nobuhiro Kuwata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor having a GaInAs/GaAs quantum well structure
- Patent number 5,331,185
- Issue date Jul 19, 1994
- Sumitomo Electric Industries, Ltd.
- Nobuhiro Kuwata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor having a sandwiched channel layer
- Patent number 5,331,410
- Issue date Jul 19, 1994
- Sumitomo Electric Industries, Ltd.
- Nobuhiro Kuwata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing field effect transistor
- Patent number 5,286,662
- Issue date Feb 15, 1994
- Sumitomo Electric Industries, Ltd.
- Nobuhiro Kuwata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor
- Patent number 5,206,527
- Issue date Apr 27, 1993
- Sumitomo Electric Industries, Ltd.
- Nobuhiro Kuwata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating semiconductor device
- Patent number 5,100,831
- Issue date Mar 31, 1992
- Sumitomo Electric Industries, Ltd.
- Nobuhiro Kuwata
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Microwave amplifying circuit, microwave amplifying device, and dist...
- Publication number 20020027477
- Publication date Mar 7, 2002
- Nobuhiro Kuwata
- H03 - BASIC ELECTRONIC CIRCUITRY

Nobuhiro Kuwata

Person

Patents Grantslast 30 patents

Field effect transistor including a cap with a doped layer formed t...

Field effect transistor and method of manufacturing the same

Semiconductor device with delta-doped layer in channel region

Semiconductor device and a method for fabricating the same

Field effect transistor having a GaInAs/GaAs quantum well structure

Field effect transistor having a sandwiched channel layer

Method for manufacturing field effect transistor

Field effect transistor

Method for fabricating semiconductor device

Patents Applicationslast 30 patents

Microwave amplifying circuit, microwave amplifying device, and dist...