Nobumitsu Takahashi

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Tokyo, JP

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Patents Grantslast 30 patents

Information Patent Grant
Vertical power MOSFET structure having reduced cell area
- Patent number 5,366,914
- Issue date Nov 22, 1994
- NEC Corporation
- Nobumitsu Takahashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical field effect transistor with diffused protection diode
- Patent number 5,313,088
- Issue date May 17, 1994
- NEC Corporation
- Nobumitsu Takahashi
- H01 - BASIC ELECTRIC ELEMENTS