Nobumitsu Takase

Person

Minato-ku, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Method of manufacturing silicon single crystal, apparatus for pulli...
- Patent number 8,696,813
- Issue date Apr 15, 2014
- Japan Super Quartz Corporation
- Masanori Fukui
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method for growing silicon single crystal and method for manufactur...
- Patent number 7,819,972
- Issue date Oct 26, 2010
- Sumco Corporation
- Shuichi Inami
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for growing silicon single crystal
- Patent number 7,473,314
- Issue date Jan 6, 2009
- Sumco Corporation
- Shuichi Inami
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing silicon single crystals and silicon single cry...
- Patent number 7,442,251
- Issue date Oct 28, 2008
- Sumco Corporation
- Shuichi Inami
- C30 - CRYSTAL GROWTH
Information Patent Grant
High resistance silicon wafer and its manufacturing method
- Patent number 7,397,110
- Issue date Jul 8, 2008
- Sumitomo Mitsubishi Silicon Corporation
- Nobumitsu Takase
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-resistance silicon wafer and process for producing the same
- Patent number 7,316,745
- Issue date Jan 8, 2008
- Sumco Corporation
- Shinsuke Sadamitsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon annealed wafer and silicon epitaxial wafer
- Patent number 7,273,647
- Issue date Sep 25, 2007
- Sumitomo Mitsubishi Silicon Corporation
- Hideshi Nishikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High resistivity silicon wafer and method for fabricating the same
- Patent number 7,226,571
- Issue date Jun 5, 2007
- Sumitomo Mitsubishi Silicon Corporation
- Nobumitsu Takase
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing method of high resistivity silicon single crystal
- Patent number 7,220,308
- Issue date May 22, 2007
- Sumitomo Mitsubishi Silicon Corporation
- Nobumitsu Takase
- C30 - CRYSTAL GROWTH
Information Patent Grant
Device and method for measuring position of liquid surface or melt...
- Patent number 7,172,656
- Issue date Feb 6, 2007
- Sumitomo Mitsubishi Silicon Corporation
- Keiichi Takanashi
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC

Patents Applicationslast 30 patents

Information Patent Application
COVER FOR VITREOUS SILICA CRUCIBLE AND VITREOUS SILICA CRUCIBLE AND...
- Publication number 20120270167
- Publication date Oct 25, 2012
- SUMCO CORPORATION
- Masaru Sato
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF MANUFACTURING SILICON SINGLE CRYSTAL, APPARATUS FOR PULLI...
- Publication number 20100326349
- Publication date Dec 30, 2010
- JAPAN SUPER QUARTZ CORPORATION
- Masanori FUKUI
- C30 - CRYSTAL GROWTH
Information Patent Application
SEED CRYSTAL FOR PULLING SILICON SINGLE CRYSTAL AND METHOD FOR MANU...
- Publication number 20100242832
- Publication date Sep 30, 2010
- SUMCO CORPORATION
- Nobumitsu Takase
- C30 - CRYSTAL GROWTH
Information Patent Application
Silicon single crystal and method of producing the same
- Publication number 20090311160
- Publication date Dec 17, 2009
- Yasuhiro SAITO
- C30 - CRYSTAL GROWTH
Information Patent Application
Method for growing silicon single crystal
- Publication number 20090260564
- Publication date Oct 22, 2009
- Yasuhiro SAITO
- C30 - CRYSTAL GROWTH
Information Patent Application
Method for growing silicon single crystal
- Publication number 20060283373
- Publication date Dec 21, 2006
- SUMCO CORPORATION
- Shuichi Inami
- C30 - CRYSTAL GROWTH
Information Patent Application
Method for producing silicon single crystals and silicon single cry...
- Publication number 20060283377
- Publication date Dec 21, 2006
- SUMCO CORPORATION
- Shuichi Inami
- C30 - CRYSTAL GROWTH
Information Patent Application
Method for growing silicon single crystal and method for manufactur...
- Publication number 20060283379
- Publication date Dec 21, 2006
- SUMCO CORPORATION
- Shuichi Inami
- C30 - CRYSTAL GROWTH
Information Patent Application
High resistance silicon wafer and method for production thereof
- Publication number 20050253221
- Publication date Nov 17, 2005
- SUMITOMO MITSUBISHI SILICON CORPORATION
- Nobumitsu Takase
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High-resistance silicon wafer and process for producing the same
- Publication number 20050250349
- Publication date Nov 10, 2005
- Sumitomo Mitsubishi Silicon Corporation
- Shinsuke Sadamitsu
- C30 - CRYSTAL GROWTH
Information Patent Application
High resistivity silicon wafer and method for fabricating the same
- Publication number 20050127477
- Publication date Jun 16, 2005
- Nobumitsu Takase
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Manufacturing method of high resistivity silicon single crystal
- Publication number 20050000410
- Publication date Jan 6, 2005
- Nobumitsu Takase
- C30 - CRYSTAL GROWTH
Information Patent Application
Device and method for measuring position of liquid surface of melt...
- Publication number 20040221794
- Publication date Nov 11, 2004
- SUMITOMO MITSUBISHI SILICON CORPORATION
- Keiichi Takanashi
- C30 - CRYSTAL GROWTH
Information Patent Application
Silicon annealed wafer and silicon epitaxial wafer
- Publication number 20040194692
- Publication date Oct 7, 2004
- Hideshi Nishikawa
- C30 - CRYSTAL GROWTH

Nobumitsu Takase

Person

Patents Grantslast 30 patents

Method of manufacturing silicon single crystal, apparatus for pulli...

Method for growing silicon single crystal and method for manufactur...

Method for growing silicon single crystal

Method for producing silicon single crystals and silicon single cry...

High resistance silicon wafer and its manufacturing method

High-resistance silicon wafer and process for producing the same

Silicon annealed wafer and silicon epitaxial wafer

High resistivity silicon wafer and method for fabricating the same

Manufacturing method of high resistivity silicon single crystal

Device and method for measuring position of liquid surface or melt...

Patents Applicationslast 30 patents

COVER FOR VITREOUS SILICA CRUCIBLE AND VITREOUS SILICA CRUCIBLE AND...

METHOD OF MANUFACTURING SILICON SINGLE CRYSTAL, APPARATUS FOR PULLI...

SEED CRYSTAL FOR PULLING SILICON SINGLE CRYSTAL AND METHOD FOR MANU...

Silicon single crystal and method of producing the same

Method for growing silicon single crystal

Method for growing silicon single crystal

Method for producing silicon single crystals and silicon single cry...

Method for growing silicon single crystal and method for manufactur...

High resistance silicon wafer and method for production thereof

High-resistance silicon wafer and process for producing the same

High resistivity silicon wafer and method for fabricating the same

Manufacturing method of high resistivity silicon single crystal

Device and method for measuring position of liquid surface of melt...

Silicon annealed wafer and silicon epitaxial wafer