Nobuyoshi Yashiro

Person

Tokyo, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Apparatus for producing SiC single crystal and method for producing...
- Patent number 10,100,432
- Issue date Oct 16, 2018
- Toyota Jidosha Kabushiki Kaisha
- Nobuhiro Okada
- C30 - CRYSTAL GROWTH
Information Patent Grant
Apparatus for producing SiC single crystal by solution growth metho...
- Patent number 9,783,911
- Issue date Oct 10, 2017
- Toyota Jidosha Kabushiki Kaisha
- Nobuyoshi Yashiro
- C30 - CRYSTAL GROWTH
Information Patent Grant
Production apparatus and production method of SiC single crystal
- Patent number 9,732,441
- Issue date Aug 15, 2017
- Nippon Steel & Sumitomo Metal Corporation
- Kazuhiko Kusunoki
- C30 - CRYSTAL GROWTH
Information Patent Grant
Production apparatus of SiC single crystal by solution growth metho...
- Patent number 9,702,056
- Issue date Jul 11, 2017
- Nippon Steel & Sumitomo Metal Corporation
- Kazuhito Kamei
- C30 - CRYSTAL GROWTH
Information Patent Grant
Manufacturing apparatus of SiC single crystal and method for manufa...
- Patent number 9,617,655
- Issue date Apr 11, 2017
- Nippon Steel & Sumitomo Metal Corporation
- Nobuhiro Okada
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for manufacturing N-type SiC single crystal by solution grow...
- Patent number 9,512,540
- Issue date Dec 6, 2016
- Nippon Steel & Sumitomo Metal Corporation
- Kazuhiko Kusunoki
- C30 - CRYSTAL GROWTH
Information Patent Grant
Manufacturing apparatus of SiC single crystal, jig for use in the m...
- Patent number 9,388,508
- Issue date Jul 12, 2016
- Toyota Jidosha Kabushiki Kaisha
- Kazuhito Kamei
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
SiC single crystal wafer and process for production thereof
- Patent number 9,222,198
- Issue date Dec 29, 2015
- Nippon Steel & Sumitomo Metal Corporation
- Kazuhiko Kusunoki
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method and apparatus for manufacturing a SiC single crystal film
- Patent number 8,492,774
- Issue date Jul 23, 2013
- Nippon Steel & Sumitomo Metal Corporation
- Kazuhiko Kusunoki
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method of manufacturing a silicon carbide single crystal
- Patent number 8,388,752
- Issue date Mar 5, 2013
- Sumitomo Metal Industries, Ltd.
- Kazuhito Kamei
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for preparing silicon carbide single crystal
- Patent number 7,635,413
- Issue date Dec 22, 2009
- Sumitomo Metal Industries, Ltd.
- Kazuhiko Kusunoki
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC

Patents Applicationslast 30 patents

Information Patent Application
SINGLE CRYSTAL PRODUCTION APPARATUS, CRUCIBLE FOR USE THEREIN, AND...
- Publication number 20150225872
- Publication date Aug 13, 2015
- TOYOTA JIDOSHA KABUSHIKI KAISHA
- Kazuhito Kamei
- C30 - CRYSTAL GROWTH
Information Patent Application
SiC SINGLE CRYSTAL PRODUCTION APPARATUS AND METHOD OF PRODUCING SiC...
- Publication number 20150225871
- Publication date Aug 13, 2015
- TOYOTA JIDOSHA KABUSHIKI KAISHA
- Kazuhiko Kusunoki
- C30 - CRYSTAL GROWTH
Information Patent Application
APPARATUS FOR PRODUCING SIC SINGLE CRYSTAL BY SOLUTION GROWTH METHO...
- Publication number 20150191848
- Publication date Jul 9, 2015
- Toyota Jidosha Kabushiki Kaisha
- Nobuyoshi Yashiro
- C30 - CRYSTAL GROWTH
Information Patent Application
APPARATUS FOR PRODUCING SiC SINGLE CRYSTAL AND METHOD FOR PRODUCING...
- Publication number 20150152569
- Publication date Jun 4, 2015
- NIPPON STEEL & SUMITOMO METAL CORPORATION
- Nobuhiro Okada
- C30 - CRYSTAL GROWTH
Information Patent Application
PRODUCTION APPARATUS AND PRODUCTION METHOD OF SiC SINGLE CRYSTAL
- Publication number 20140116324
- Publication date May 1, 2014
- TOYOTA JIDOSHA KABUSHIKI KAISHA
- Kazuhiko Kusunoki
- C30 - CRYSTAL GROWTH
Information Patent Application
PRODUCTION APPARATUS OF SiC SINGLE CRYSTAL BY SOLUTION GROWTH METHO...
- Publication number 20140116325
- Publication date May 1, 2014
- TOYOTA JIDOSHA KABUSHIKI KAISHA
- Kazuhito Kamei
- C30 - CRYSTAL GROWTH
Information Patent Application
MANUFACTURING APPARATUS OF SiC SINGLE CRYSTAL, JIG FOR USE IN THE M...
- Publication number 20130305981
- Publication date Nov 21, 2013
- TOYOTA JIDOSHA KABUSHIKI KAISHA
- Kazuhito Kamei
- C30 - CRYSTAL GROWTH
Information Patent Application
MANUFACTURING APPARATUS OF SiC SINGLE CRYSTAL AND METHOD FOR MANUFA...
- Publication number 20130284083
- Publication date Oct 31, 2013
- TOYOTA JIDOSHA KABUSHIKI KAISHA
- Nobuhiro Okada
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR MANUFACTURING N-TYPE SiC SINGLE CRYSTAL
- Publication number 20130220212
- Publication date Aug 29, 2013
- Toyota Jidosha Kabushiki Kaisha
- Kazuhiko Kusunoki
- C30 - CRYSTAL GROWTH
Information Patent Application
Sic single crystal wafer and process for production thereof
- Publication number 20120211769
- Publication date Aug 23, 2012
- Sumitomo Metal Industries, Ltd.
- Kazuhiko Kusunoki
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF MANUFACTURING A SILICON CARBIDE SINGLE CRYSTAL
- Publication number 20110200833
- Publication date Aug 18, 2011
- Sumitomo Metal Industries, Ltd.
- Kazuhito KAMEI
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD AND APPARATUS FOR MANUFACTURING A SiC SINGLE CRYSTAL FILM
- Publication number 20110198614
- Publication date Aug 18, 2011
- Sumitomo Metal Industries, Ltd.
- Kazuhiko KUSUNOKI
- C30 - CRYSTAL GROWTH
Information Patent Application
Method for preparing silicon carbide single crystal
- Publication number 20070209573
- Publication date Sep 13, 2007
- Sumitomo Metal Industries, Ltd.
- Kazuhiko Kusunoki
- C30 - CRYSTAL GROWTH

Nobuyoshi Yashiro

Person

Patents Grantslast 30 patents

Apparatus for producing SiC single crystal and method for producing...

Apparatus for producing SiC single crystal by solution growth metho...

Production apparatus and production method of SiC single crystal

Production apparatus of SiC single crystal by solution growth metho...

Manufacturing apparatus of SiC single crystal and method for manufa...

Method for manufacturing N-type SiC single crystal by solution grow...

Manufacturing apparatus of SiC single crystal, jig for use in the m...

SiC single crystal wafer and process for production thereof

Method and apparatus for manufacturing a SiC single crystal film

Method of manufacturing a silicon carbide single crystal

Method for preparing silicon carbide single crystal

Patents Applicationslast 30 patents

SINGLE CRYSTAL PRODUCTION APPARATUS, CRUCIBLE FOR USE THEREIN, AND...

SiC SINGLE CRYSTAL PRODUCTION APPARATUS AND METHOD OF PRODUCING SiC...

APPARATUS FOR PRODUCING SIC SINGLE CRYSTAL BY SOLUTION GROWTH METHO...

APPARATUS FOR PRODUCING SiC SINGLE CRYSTAL AND METHOD FOR PRODUCING...

PRODUCTION APPARATUS AND PRODUCTION METHOD OF SiC SINGLE CRYSTAL

PRODUCTION APPARATUS OF SiC SINGLE CRYSTAL BY SOLUTION GROWTH METHO...

MANUFACTURING APPARATUS OF SiC SINGLE CRYSTAL, JIG FOR USE IN THE M...

MANUFACTURING APPARATUS OF SiC SINGLE CRYSTAL AND METHOD FOR MANUFA...

METHOD FOR MANUFACTURING N-TYPE SiC SINGLE CRYSTAL

Sic single crystal wafer and process for production thereof

METHOD OF MANUFACTURING A SILICON CARBIDE SINGLE CRYSTAL

METHOD AND APPARATUS FOR MANUFACTURING A SiC SINGLE CRYSTAL FILM

Method for preparing silicon carbide single crystal