Nobuyuki Hayama

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Tokyo, JP

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Patents Grantslast 30 patents

Information Patent Grant
Group III nitride semiconductor device of field effect transistor t...
- Patent number 6,765,241
- Issue date Jul 20, 2004
- NEC Corporation
- Yasuo Ohno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hetero-junction field effect transistor having an intermediate layer
- Patent number 6,552,373
- Issue date Apr 22, 2003
- NEC Corporation
- Yuji Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device, semiconductor integrated circuit, and method...
- Patent number 6,507,089
- Issue date Jan 14, 2003
- NEC Corporation
- Kouji Azuma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with schottky electrode having high schottky b...
- Patent number 6,492,669
- Issue date Dec 10, 2002
- NEC Corporation
- Tatsuo Nakayama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 6,465,814
- Issue date Oct 15, 2002
- NEC Corporation
- Kensuke Kasahara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having drain and gate electrodes formed to lie...
- Patent number 6,441,391
- Issue date Aug 27, 2002
- NEC Corporation
- Yasuo Ohno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor device with sidewall metal la...
- Patent number 6,440,822
- Issue date Aug 27, 2002
- NEC Corporation
- Nobuyuki Hayama
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Semiconductor device
- Publication number 20030151064
- Publication date Aug 14, 2003
- Yasuo Ohno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device, semiconductor integrated circuit, and method...
- Publication number 20030034504
- Publication date Feb 20, 2003
- Kouji Azuma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device
- Publication number 20020047113
- Publication date Apr 25, 2002
- NEC Corporation
- Yasuo Ohno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of manufacturing semiconductor device with sidewall metal la...
- Publication number 20020048889
- Publication date Apr 25, 2002
- NEC Corporation
- Nobuyuki Hayama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device
- Publication number 20020017648
- Publication date Feb 14, 2002
- Kensuke Kasahara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device with schottky electrode having high schottky b...
- Publication number 20020017696
- Publication date Feb 14, 2002
- Tatsuo Nakayama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Hetero-junction field effect transistor having an intermediate layer
- Publication number 20010040247
- Publication date Nov 15, 2001
- Yuji Ando
- H01 - BASIC ELECTRIC ELEMENTS