Nobuyuki Kasai

Person

Itami, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Method for manufacturing monolithic semiconductor laser
- Patent number 7,678,596
- Issue date Mar 16, 2010
- Mitsubishi Electric Corporation
- Nobuyuki Kasai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including an insulative layer having a gap
- Patent number 5,917,231
- Issue date Jun 29, 1999
- Mitsubishi Denki Kabushiki Kaisha
- Nobuyuki Kasai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating semiconductor device
- Patent number 5,888,859
- Issue date Mar 30, 1999
- Mitsubishi Denki Kabushiki Kaisha
- Tomoki Oku
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Recessed gate field effect transistor
- Patent number 5,675,159
- Issue date Oct 7, 1997
- Mitsubishi Denki Kabushiki Kaisha
- Tomoki Oku
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High breakdown voltage field effect transistor
- Patent number 5,648,668
- Issue date Jul 15, 1997
- Mitsubishi Denki Kabushiki Kaisha
- Nobuyuki Kasai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making a mushroom-shaped gate electrode of semiconductor...
- Patent number 5,288,654
- Issue date Feb 22, 1994
- Mitsubishi Denki Kabushiki Kaisha
- Nobuyuki Kasai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor
- Patent number 5,250,822
- Issue date Oct 5, 1993
- Mitsubishi Denki Kabushiki Kaisha
- Takuji Sonoda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with a mushroom-shaped gate electrode
- Patent number 5,220,186
- Issue date Jun 15, 1993
- Mitsubishi Denki Kabushiki Kaisha
- Nobuyuki Kasai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Monolithic parallel connected transistor structure
- Patent number 5,185,534
- Issue date Feb 9, 1993
- Mitsubishi Denki Kabushiki Kaisha
- Shinichi Sakamoto
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHOD FOR MANUFACTURING MONOLITHIC SEMICONDUCTOR LASER
- Publication number 20090093076
- Publication date Apr 9, 2009
- Mitsubishi Electric Corporation
- Nobuyuki Kasai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor laser device
- Publication number 20020196828
- Publication date Dec 26, 2002
- Mitsubishi Denki Kabushiki Kaisha
- Shinji Abe
- B82 - NANO-TECHNOLOGY

Nobuyuki Kasai

Person

Patents Grantslast 30 patents

Method for manufacturing monolithic semiconductor laser

Semiconductor device including an insulative layer having a gap

Method of fabricating semiconductor device

Recessed gate field effect transistor

High breakdown voltage field effect transistor

Method of making a mushroom-shaped gate electrode of semiconductor...

Field effect transistor

Semiconductor device with a mushroom-shaped gate electrode

Monolithic parallel connected transistor structure

Patents Applicationslast 30 patents

METHOD FOR MANUFACTURING MONOLITHIC SEMICONDUCTOR LASER

Semiconductor laser device