Nobuyuki Nishikawa

Person

Kawasaki, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device using metal nitride as insulating film and its...
- Patent number 8,067,309
- Issue date Nov 29, 2011
- Fujitsu Semiconductor Limited
- Noriyoshi Shimizu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Oxidizing a metal layer for a dielectric having a platinum electrode
- Patent number 7,470,595
- Issue date Dec 30, 2008
- Fujitsu Limited
- Nobuyuki Nishikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a semiconductor memory device that includes...
- Patent number 7,381,614
- Issue date Jun 3, 2008
- Fujitsu Limited
- Nobuyuki Nishikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device using metal nitride as insulating film
- Patent number 7,256,500
- Issue date Aug 14, 2007
- Fujitsu Limited
- Noriyuki Shimizu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device suitable for forming conductive film such as p...
- Patent number 7,102,189
- Issue date Sep 5, 2006
- Fujitsu Limited
- Nobuyuki Nishikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device using metal nitride as insulating film
- Patent number 7,042,093
- Issue date May 9, 2006
- Fujitsu Limited
- Noriyoshi Shimizu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device having cylinder-type stacked capacitor...
- Patent number 6,873,002
- Issue date Mar 29, 2005
- Fujitsu Limited
- Nobuyuki Nishikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for production of semiconductor device
- Patent number 6,087,261
- Issue date Jul 11, 2000
- Fujitsu Limited
- Nobuyuki Nishikawa
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Semiconductor device using metal nitride as insulating film and its...
- Publication number 20090042386
- Publication date Feb 12, 2009
- Fujitsu Limited
- Noriyoshi Shimizu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device using metal nitride as insulating film
- Publication number 20070252280
- Publication date Nov 1, 2007
- Fujitsu Limited
- Noriyoshi Shimizu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device suitable for forming conductive film such as p...
- Publication number 20060286744
- Publication date Dec 21, 2006
- FUJITSU LIMITED
- Nobuyuki Nishikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device using metal nitride as insulating film and its...
- Publication number 20060145348
- Publication date Jul 6, 2006
- FUJITSU LIMITED
- Noriyoshi Shimizu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor memory device having cylinder-type stacked capacitor...
- Publication number 20050127426
- Publication date Jun 16, 2005
- FUJITSU LIMITED
- Nobuyuki Nishikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device suitable for forming conductive film such as p...
- Publication number 20040150021
- Publication date Aug 5, 2004
- FUJITSU LIMITED
- Nobuyuki Nishikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device using metal nitride as insulating film and its...
- Publication number 20040004287
- Publication date Jan 8, 2004
- FUJITSU LIMITED
- Noriyoshi Shimizu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor memory device having cylinder-type stacked capacitor...
- Publication number 20040004240
- Publication date Jan 8, 2004
- Fujitsu Limited,
- Nobuyuki Nishikawa
- H01 - BASIC ELECTRIC ELEMENTS

Nobuyuki Nishikawa

Person

Patents Grantslast 30 patents

Semiconductor device using metal nitride as insulating film and its...

Oxidizing a metal layer for a dielectric having a platinum electrode

Method for fabricating a semiconductor memory device that includes...

Semiconductor device using metal nitride as insulating film

Semiconductor device suitable for forming conductive film such as p...

Semiconductor device using metal nitride as insulating film

Semiconductor memory device having cylinder-type stacked capacitor...

Method for production of semiconductor device

Patents Applicationslast 30 patents

Semiconductor device using metal nitride as insulating film and its...

Semiconductor device using metal nitride as insulating film

Semiconductor device suitable for forming conductive film such as p...

Semiconductor device using metal nitride as insulating film and its...

Semiconductor memory device having cylinder-type stacked capacitor...

Semiconductor device suitable for forming conductive film such as p...

Semiconductor device using metal nitride as insulating film and its...

Semiconductor memory device having cylinder-type stacked capacitor...