Nobuyuki Yamanishi

Person

Tokyo, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device having silicon-diffused metal wiring layer and...
- Patent number 8,642,467
- Issue date Feb 4, 2014
- Renesas Electronics Corporation
- Koichi Ohto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having silicon-diffused metal wiring layer and...
- Patent number 8,115,318
- Issue date Feb 14, 2012
- Renesas Electronics Corporation
- Koichi Ohto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having silicon-diffused metal wiring layer and...
- Patent number 7,842,602
- Issue date Nov 30, 2010
- Renesas Electronics Corporation
- Koichi Ohto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor method having silicon-diffused metal wiring layer
- Patent number 7,737,555
- Issue date Jun 15, 2010
- NEC Electronics Corporation
- Koichi Ohto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Single damascene structure semiconductor device having silicon-diff...
- Patent number 7,687,917
- Issue date Mar 30, 2010
- NEC Electronics Corporation
- Koichi Ohto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing semiconductor memory devices
- Patent number 6,436,761
- Issue date Aug 20, 2002
- NEC Corporation
- Yoshihiro Harada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing semiconductor device
- Patent number 6,399,439
- Issue date Jun 4, 2002
- NEC Corporation
- Nobuyuki Yamanishi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Capacitor formed by lower electrode having inner and outer uneven s...
- Patent number 6,307,730
- Issue date Oct 23, 2001
- NEC Corporation
- Nobuyuki Yamanishi
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE HAVING SILICON-DIFFUSED METAL WIRING LAYER AND...
- Publication number 20120108060
- Publication date May 3, 2012
- NEC ELECTRONICS CORPORATION
- Koichi Ohto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING SILICON-DIFFUSED METAL WIRING LAYER AND...
- Publication number 20100224995
- Publication date Sep 9, 2010
- NEC ELECTRONICS CORPORATION
- Koichi Ohto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING SILICON-DIFFUSED METAL WIRING LAYER AND...
- Publication number 20070212809
- Publication date Sep 13, 2007
- NEC ELECTRONICS CORPORATION
- Koichi Ohto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device having silicon-diffused metal wiring layer and...
- Publication number 20070108620
- Publication date May 17, 2007
- NEC Electronics Corporation
- Koichi Ohto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device having silicon-including metal wiring layer an...
- Publication number 20030209738
- Publication date Nov 13, 2003
- NEC Corporation
- Koichi Ohto
- H01 - BASIC ELECTRIC ELEMENTS

Nobuyuki Yamanishi

Person

Patents Grantslast 30 patents

Semiconductor device having silicon-diffused metal wiring layer and...

Semiconductor device having silicon-diffused metal wiring layer and...

Semiconductor device having silicon-diffused metal wiring layer and...

Semiconductor method having silicon-diffused metal wiring layer

Single damascene structure semiconductor device having silicon-diff...

Method for manufacturing semiconductor memory devices

Method for manufacturing semiconductor device

Capacitor formed by lower electrode having inner and outer uneven s...

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE HAVING SILICON-DIFFUSED METAL WIRING LAYER AND...

SEMICONDUCTOR DEVICE HAVING SILICON-DIFFUSED METAL WIRING LAYER AND...

SEMICONDUCTOR DEVICE HAVING SILICON-DIFFUSED METAL WIRING LAYER AND...

Semiconductor device having silicon-diffused metal wiring layer and...

Semiconductor device having silicon-including metal wiring layer an...