Noel P. Hoilien

Person

Saint Paul, MN, US

People

Patents Grantslast 30 patents

Information Patent Grant
Transistor with single termination trench having depth more than 10...
- Patent number 12,015,079
- Issue date Jun 18, 2024
- Polar Semiconductor, LLC
- Noel Hoilien
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Insulated gate bipolar transistor with epitaxial layer formed on re...
- Patent number 11,329,147
- Issue date May 10, 2022
- Polar Semiconductor, LLC
- Noel Hoilien
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor with buried p-field termination region
- Patent number 11,264,496
- Issue date Mar 1, 2022
- Polar Semiconductor, LLC
- Noel Hoilien
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical hall effect sensor
- Patent number 9,735,345
- Issue date Aug 15, 2017
- Allegro Microsystems, LLC
- Steven Kosier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical hall effect sensor
- Patent number 9,312,473
- Issue date Apr 12, 2016
- Allegro Microsystems, LLC
- Steven Kosier
- G01 - MEASURING TESTING
Information Patent Grant
Integrated hybrid hall effect transducer
- Patent number 8,736,003
- Issue date May 27, 2014
- Allegro Microsystems, LLC
- David Erie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Locos nitride capping of deep trench polysilicon fill
- Patent number 8,461,661
- Issue date Jun 11, 2013
- Polar Semiconductor, Inc.
- Noel Hoilien
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Photodiode array having reduced dead space
- Patent number 7,135,750
- Issue date Nov 14, 2006
- Polar Semiconductor, Inc.
- John C. Beckman
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
TRANSISTOR WITH SINGLE TERMINATION TRENCH HAVING DEPTH MORE THAN 10...
- Publication number 20230065066
- Publication date Mar 2, 2023
- Polar Semiconductor, LLC
- Noel Hoilien
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR WITH IMPROVED SWITCHING
- Publication number 20210359115
- Publication date Nov 18, 2021
- Polar Semiconductor, LLC
- Noel Hoilien
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR WITH BURIED P-FIELD TERMINATION REGION
- Publication number 20210328054
- Publication date Oct 21, 2021
- Polar Semiconductor, LLC
- Noel Hoilien
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL HALL EFFECT SENSOR
- Publication number 20160190433
- Publication date Jun 30, 2016
- Allegro Microsystems, LLC
- Steven Kosier
- G01 - MEASURING TESTING
Information Patent Application
VERTICAL HALL EFFECT SENSOR
- Publication number 20150091112
- Publication date Apr 2, 2015
- Allegro Microsystems, LLC
- Steven Kosier
- G01 - MEASURING TESTING
Information Patent Application
INTEGRATED HYBRID HALL EFFECT TRANSDUCER
- Publication number 20110147865
- Publication date Jun 23, 2011
- Polar Semiconductor, Inc.
- David Erie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOCOS NITRIDE CAPPING OF DEEP TRENCH POLYSILICON FILL
- Publication number 20100252905
- Publication date Oct 7, 2010
- Polar Semiconductor, Inc.
- Noel Hoilien
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Multi-layered spacer for lightly-doped drain MOSFETS
- Publication number 20060270165
- Publication date Nov 30, 2006
- Polar Semiconductor, Inc.
- Kyeonglan Rho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Multilayered emitter window for bipolar junction transistor
- Publication number 20060267146
- Publication date Nov 30, 2006
- Polar Semiconductor, Inc.
- Noel Hoilien
- H01 - BASIC ELECTRIC ELEMENTS

Noel P. Hoilien

Person

Patents Grantslast 30 patents

Transistor with single termination trench having depth more than 10...

Insulated gate bipolar transistor with epitaxial layer formed on re...

Transistor with buried p-field termination region

Vertical hall effect sensor

Vertical hall effect sensor

Integrated hybrid hall effect transducer

Locos nitride capping of deep trench polysilicon fill

Photodiode array having reduced dead space

Patents Applicationslast 30 patents

TRANSISTOR WITH SINGLE TERMINATION TRENCH HAVING DEPTH MORE THAN 10...

TRANSISTOR WITH IMPROVED SWITCHING

TRANSISTOR WITH BURIED P-FIELD TERMINATION REGION

VERTICAL HALL EFFECT SENSOR

VERTICAL HALL EFFECT SENSOR

INTEGRATED HYBRID HALL EFFECT TRANSDUCER

LOCOS NITRIDE CAPPING OF DEEP TRENCH POLYSILICON FILL

Multi-layered spacer for lightly-doped drain MOSFETS

Multilayered emitter window for bipolar junction transistor