Norbert Arnold

Person

Essex, VT, US

People

Patents Grantslast 30 patents

Information Patent Grant
Deep trench polysilicon fin first
- Patent number 9,490,257
- Issue date Nov 8, 2016
- GLOBALFOUNDRIES Inc.
- Norbert Arnold
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Voltage contrast inspection of deep trench isolation
- Patent number 9,293,382
- Issue date Mar 22, 2016
- GLOBALFOUNDRIES Inc.
- Norbert Arnold
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Voltage contrast inspection of deep trench isolation
- Patent number 8,927,989
- Issue date Jan 6, 2015
- International Business Machines Corporation
- Norbert Arnold
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned collar and strap formation for semiconductor devices
- Patent number 7,015,145
- Issue date Mar 21, 2006
- Infineon Technologies AG
- Venkatachalam C. Jaiprakash
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for forming vertical gate transistors providing improved is...
- Patent number 7,015,092
- Issue date Mar 21, 2006
- Infineon Technologies North America Corp.
- Venkatachalam C. Jaiprakash
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical 8F2 cell dram with active area self-aligned to bit line
- Patent number 6,884,676
- Issue date Apr 26, 2005
- Infineon Technologies AG
- Norbert Arnold
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
DRAM with vertical transistor and trench capacitor memory cells and...
- Patent number 6,849,496
- Issue date Feb 1, 2005
- Infineon Technologies AG
- Venkatachalam C. Jaiprakash
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
DRAM with vertical transistor and trench capacitor memory cells and...
- Patent number 6,621,112
- Issue date Sep 16, 2003
- Infineon Technologies AG
- Venkatachalam C. Jaiprakash
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory cell that includes a vertical transistor and a trench capacitor
- Patent number 6,200,851
- Issue date Mar 13, 2001
- Siemens Aktiengesellschaft
- Norbert Arnold
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Production method for a trench capacitor with an insulation collar
- Patent number 6,200,873
- Issue date Mar 13, 2001
- Siemens Aktiengesellschaft
- Martin Schrems
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory cell that includes a vertical transistor and a trench capacitor
- Patent number 6,150,210
- Issue date Nov 21, 2000
- Siemens Aktiengesellschaft
- Norbert Arnold
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory cell that includes a vertical transistor and a trench capacitor
- Patent number 5,937,296
- Issue date Aug 10, 1999
- Siemens Aktiengesellschaft
- Norbert Arnold
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit devices including shallow trench isolation
- Patent number 5,783,476
- Issue date Jul 21, 1998
- Siemens Aktiengesellschaft
- Norbert Arnold
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Automated non-visual method of locating periodically arranged sub-m...
- Patent number 5,747,802
- Issue date May 5, 1998
- Siemens Aktiengesellschaft
- Norbert Arnold
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
DEEP TRENCH POLYSILICON FIN FIRST
- Publication number 20160181252
- Publication date Jun 23, 2016
- GLOBALFOUNDRIES INC.
- Norbert Arnold
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VOLTAGE CONTRAST INSPECTION OF DEEP TRENCH ISOLATION
- Publication number 20150041809
- Publication date Feb 12, 2015
- International Business Machines Corporation
- Norbert Arnold
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VOLTAGE CONTRAST INSPECTION OF DEEP TRENCH ISOLATION
- Publication number 20140145191
- Publication date May 29, 2014
- International Business Machines Corporation
- Norbert Arnold
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods for forming vertical gate transistors providing improved is...
- Publication number 20050136631
- Publication date Jun 23, 2005
- Venkatachalam C. Jaiprakash
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Extendible process for improved top oxide layer for DRAM array and...
- Publication number 20040256651
- Publication date Dec 23, 2004
- Infineon Technologies AG
- Thomas W. Dyer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Vertical 8F2 cell dram with active area self-aligned to bit line
- Publication number 20040238868
- Publication date Dec 2, 2004
- Infineon Technologies North America Corp.
- Norbert Arnold
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DRAM with vertical transistor and trench capacitor memory cells and...
- Publication number 20040029346
- Publication date Feb 12, 2004
- Venkatachalam C. Jaiprakash
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED COLLAR AND STRAP FORMATION FOR SEMICONDUCTOR DEVICES
- Publication number 20020090824
- Publication date Jul 11, 2002
- V.C. Jaiprakash
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DRAM with vertical transistor and trench capaitor memory cells and...
- Publication number 20020066917
- Publication date Jun 6, 2002
- Venkatachalam C. Jaiprakash
- H01 - BASIC ELECTRIC ELEMENTS

Norbert Arnold

Person

Patents Grantslast 30 patents

Deep trench polysilicon fin first

Voltage contrast inspection of deep trench isolation

Voltage contrast inspection of deep trench isolation

Self-aligned collar and strap formation for semiconductor devices

Methods for forming vertical gate transistors providing improved is...

Vertical 8F2 cell dram with active area self-aligned to bit line

DRAM with vertical transistor and trench capacitor memory cells and...

DRAM with vertical transistor and trench capacitor memory cells and...

Memory cell that includes a vertical transistor and a trench capacitor

Production method for a trench capacitor with an insulation collar

Memory cell that includes a vertical transistor and a trench capacitor

Memory cell that includes a vertical transistor and a trench capacitor

Integrated circuit devices including shallow trench isolation

Automated non-visual method of locating periodically arranged sub-m...

Patents Applicationslast 30 patents

DEEP TRENCH POLYSILICON FIN FIRST

VOLTAGE CONTRAST INSPECTION OF DEEP TRENCH ISOLATION

VOLTAGE CONTRAST INSPECTION OF DEEP TRENCH ISOLATION

Methods for forming vertical gate transistors providing improved is...

Extendible process for improved top oxide layer for DRAM array and...

Vertical 8F2 cell dram with active area self-aligned to bit line

DRAM with vertical transistor and trench capacitor memory cells and...

SELF-ALIGNED COLLAR AND STRAP FORMATION FOR SEMICONDUCTOR DEVICES

DRAM with vertical transistor and trench capaitor memory cells and...