Norihiro HOSHINO

Person

Kanagawa, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Methods for manufacturing silicon carbide single crystal ingot and...
- Patent number 12,071,709
- Issue date Aug 27, 2024
- Denso Corporation
- Isaho Kamata
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon carbide single crystal
- Patent number 11,846,040
- Issue date Dec 19, 2023
- Denso Corporation
- Yuichiro Tokuda
- C01 - INORGANIC CHEMISTRY

Patents Applicationslast 30 patents

Information Patent Application
SILICON CARBIDE SINGLE CRYSTAL AND MANUFACTURING METHOD OF SILICON...
- Publication number 20240191392
- Publication date Jun 13, 2024
- DENSO CORPORATION
- Akiyoshi HORIAI
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL AND SILICON...
- Publication number 20240110309
- Publication date Apr 4, 2024
- Central Research Institute of Electric Power Industry
- Kiyoshi BETSUYAKU
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON CARBIDE SINGLE CRYSTAL INGOT, SILICON CARBIDE WAFER, AND ME...
- Publication number 20240110308
- Publication date Apr 4, 2024
- Central Research Institute of Electric Power Industry
- Kiyoshi BETSUYAKU
- C30 - CRYSTAL GROWTH
Information Patent Application
METHODS FOR MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL INGOT AND...
- Publication number 20230374699
- Publication date Nov 23, 2023
- DENSO CORPORATION
- Isaho KAMATA
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON CARBIDE SINGLE CRYSTAL AND MANUFACTURING METHOD OF SILICON...
- Publication number 20230279580
- Publication date Sep 7, 2023
- DENSO CORPORATION
- Akiyoshi HORIAI
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON CARBIDE INGOT, METHOD FOR MANUFACTURING SILICON CARBIDE ING...
- Publication number 20230193510
- Publication date Jun 22, 2023
- MIRISE Technologies Corporation
- Isaho KAMATA
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD AND APPARATUS FOR MANUFACTURING SILICON CARBIDE SINGLE CRYST...
- Publication number 20220112623
- Publication date Apr 14, 2022
- Central Research Institute of Electric Power Industry
- Norihiro HOSHINO
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON CARBIDE SINGLE CRYSTAL WAFER, AND METHODS FOR MANUFACTURING...
- Publication number 20210108334
- Publication date Apr 15, 2021
- DENSO CORPORATION
- Isaho KAMATA
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON CARBIDE SINGLE CRYSTAL
- Publication number 20210102311
- Publication date Apr 8, 2021
- DENSO CORPORATION
- Yuichiro TOKUDA
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING HEXAGONAL SINGLE CRYSTAL, METHOD FOR PRODUCING...
- Publication number 20150376813
- Publication date Dec 31, 2015
- CENTRAL RESEARCH INSTITUTE OF ELECTRIC POWER INDUSTRY
- Hidekazu TSUCHIDA
- C30 - CRYSTAL GROWTH

Norihiro HOSHINO

Person

Patents Grantslast 30 patents

Methods for manufacturing silicon carbide single crystal ingot and...

Silicon carbide single crystal

Patents Applicationslast 30 patents

SILICON CARBIDE SINGLE CRYSTAL AND MANUFACTURING METHOD OF SILICON...

METHOD FOR MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL AND SILICON...

SILICON CARBIDE SINGLE CRYSTAL INGOT, SILICON CARBIDE WAFER, AND ME...

METHODS FOR MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL INGOT AND...

SILICON CARBIDE SINGLE CRYSTAL AND MANUFACTURING METHOD OF SILICON...

SILICON CARBIDE INGOT, METHOD FOR MANUFACTURING SILICON CARBIDE ING...

METHOD AND APPARATUS FOR MANUFACTURING SILICON CARBIDE SINGLE CRYST...

SILICON CARBIDE SINGLE CRYSTAL WAFER, AND METHODS FOR MANUFACTURING...

SILICON CARBIDE SINGLE CRYSTAL

METHOD FOR PRODUCING HEXAGONAL SINGLE CRYSTAL, METHOD FOR PRODUCING...