Norio Hirashita

Person

Tokyo, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device having silicide layer completely occupied amor...
- Patent number 8,183,643
- Issue date May 22, 2012
- Oki Semiconductor Co., Ltd.
- Takashi Ichimori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 7,759,228
- Issue date Jul 20, 2010
- Kabushiki Kaisha Toshiba
- Naoharu Sugiyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure of a field effect transistor having metallic silicide and...
- Patent number 7,479,682
- Issue date Jan 20, 2009
- Oki Electric Industry Co., Ltd.
- Norio Hirashita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure of a field effect transistor having metallic silicide and...
- Patent number 7,244,996
- Issue date Jul 17, 2007
- Oki Electric Industry Co., Ltd.
- Norio Hirashita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor device
- Patent number 7,199,030
- Issue date Apr 3, 2007
- Oki Electric Industry Co., Ltd.
- Satoshi Ikeda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device
- Patent number 6,861,322
- Issue date Mar 1, 2005
- Oki Electric Industry Co., Ltd.
- Norio Hirashita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SOI MOS field effect transistor and manufacturing method therefor
- Patent number 6,750,088
- Issue date Jun 15, 2004
- Oki Electric Industry Co., Ltd.
- Norio Hirashita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SOI MOS field effect transistor and manufacturing method therefor
- Patent number 6,531,743
- Issue date Mar 11, 2003
- Oki Electric Industry Co., Ltd.
- Norio Hirashita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a semiconductor device having a metallic sil...
- Patent number 6,274,470
- Issue date Aug 14, 2001
- Oki Electric Industry Co., Ltd.
- Takashi Ichimori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of correcting temperature of semiconductor substrate
- Patent number 6,197,601
- Issue date Mar 6, 2001
- Oki Electric Industry Co., Ltd.
- Norio Hirashita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for testing semiconductor device
- Patent number 6,037,588
- Issue date Mar 14, 2000
- Oki Electric Industry Co., Ltd.
- Guo-Lin Liu
- G01 - MEASURING TESTING
Information Patent Grant
Structure of a semiconductor chip having a conductive layer
- Patent number 5,288,948
- Issue date Feb 22, 1994
- Oki Electric Industry Co., Ltd.
- Yasuhiro Fukuda
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Semiconductor device having low parasitic resistance and small junc...
- Publication number 20110223724
- Publication date Sep 15, 2011
- Oki Semiconductor Co., Ltd.
- Takashi Ichimori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Structure of a field effect transistor having metallic silicide and...
- Publication number 20070158757
- Publication date Jul 12, 2007
- Norio Hirashita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method of manufacturing the same
- Publication number 20060281234
- Publication date Dec 14, 2006
- Kabushiki Kaisha Toshiba
- Naoharu Sugiyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device having low parasitic resistance and small junc...
- Publication number 20060145271
- Publication date Jul 6, 2006
- Takashi Ichimori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of manufacturing semiconductor device
- Publication number 20040067626
- Publication date Apr 8, 2004
- Satoshi Ikeda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOI MOS field effect transistor and manufacturing method therefor
- Publication number 20030151094
- Publication date Aug 14, 2003
- Norio Hirashita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of manufacturing a semiconductor device
- Publication number 20020182784
- Publication date Dec 5, 2002
- Norio Hirashita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device having low parasitic resistance and small junc...
- Publication number 20020036320
- Publication date Mar 28, 2002
- Takashi Ichimori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Structure of a field effect transistor having metallic silicide and...
- Publication number 20010028087
- Publication date Oct 11, 2001
- Norio Hirashita
- H01 - BASIC ELECTRIC ELEMENTS

Norio Hirashita

Person

Patents Grantslast 30 patents

Semiconductor device having silicide layer completely occupied amor...

Semiconductor device and method of manufacturing the same

Structure of a field effect transistor having metallic silicide and...

Structure of a field effect transistor having metallic silicide and...

Method of manufacturing semiconductor device

Method of manufacturing a semiconductor device

SOI MOS field effect transistor and manufacturing method therefor

SOI MOS field effect transistor and manufacturing method therefor

Method for fabricating a semiconductor device having a metallic sil...

Method of correcting temperature of semiconductor substrate

Method for testing semiconductor device

Structure of a semiconductor chip having a conductive layer

Patents Applicationslast 30 patents

Semiconductor device having low parasitic resistance and small junc...

Structure of a field effect transistor having metallic silicide and...

Semiconductor device and method of manufacturing the same

Semiconductor device having low parasitic resistance and small junc...

Method of manufacturing semiconductor device

SOI MOS field effect transistor and manufacturing method therefor

Method of manufacturing a semiconductor device

Semiconductor device having low parasitic resistance and small junc...

Structure of a field effect transistor having metallic silicide and...