Norio YAMAGATA

Person

Fukui, JP

People

Patents Grantslast 30 patents

Information Patent Grant
SiC crucible, SiC sintered body, and method of producing SiC single...
- Patent number 11,440,849
- Issue date Sep 13, 2022
- Shin-Etsu Chemical Co., Ltd.
- Naofumi Shinya
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for preparing SiC single crystal
- Patent number 10,612,154
- Issue date Apr 7, 2020
- Shin-Etsu Chemical Co., Ltd.
- Naofumi Shinya
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of producing SiC single crystal
- Patent number 10,167,573
- Issue date Jan 1, 2019
- Shin-Etsu Chemical Co., Ltd.
- Tadao Nomura
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for growing silicon carbide crystal
- Patent number 9,951,439
- Issue date Apr 24, 2018
- Shin-Etsu Chemical Co., Ltd.
- Naofumi Shinya
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for growing silicon carbide crystal
- Patent number 9,945,047
- Issue date Apr 17, 2018
- Shin-Etsu Chemical Co., Ltd.
- Naofumi Shinya
- C30 - CRYSTAL GROWTH
Information Patent Grant
Substrate for magnetic recording medium
- Patent number 7,476,454
- Issue date Jan 13, 2009
- Shin-Etsu Chemical Co., Ltd.
- Naofumi Shinya
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
METHOD FOR PRODUCING SIC SINGLE CRYSTAL AND METHOD FOR SUPPRESSING...
- Publication number 20230083924
- Publication date Mar 16, 2023
- Shin-Etsu Chemical Co., Ltd.
- Norio Yamagata
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING SiC SINGLE CRYSTAL
- Publication number 20230042620
- Publication date Feb 9, 2023
- Shin-Etsu Chemical Co., Ltd.
- Naofumi Shinya
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PREPARING SiC SINGLE CRYSTAL
- Publication number 20180298519
- Publication date Oct 18, 2018
- Shin-Etsu Chemical Co., Ltd.
- Naofumi Shinya
- C30 - CRYSTAL GROWTH
Information Patent Application
SiC CRUCIBLE, SiC SINTERED BODY, AND METHOD OF PRODUCING SiC SINGLE...
- Publication number 20180257993
- Publication date Sep 13, 2018
- Shin-Etsu Chemical Co., Ltd.
- Naofumi SHINYA
- C01 - INORGANIC CHEMISTRY
Information Patent Application
METHOD OF PRODUCING SiC SINGLE CRYSTAL
- Publication number 20180230623
- Publication date Aug 16, 2018
- Shin-Etsu Chemical Co., Ltd.
- Naofumi SHINYA
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR GROWING SILICON CARBIDE CRYSTAL
- Publication number 20150159299
- Publication date Jun 11, 2015
- SHIN-ETSU CHEMICAL CO., LTD.
- Naofumi SHINYA
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR GROWING SILICON CARBIDE CRYSTAL
- Publication number 20150159297
- Publication date Jun 11, 2015
- Shin-Etsu Chemical Co., Ltd.
- Naofumi SHINYA
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF PRODUCING SiC SINGLE CRYSTAL
- Publication number 20120132130
- Publication date May 31, 2012
- Shin-Etsu Chemical Co., Ltd.
- Tadao Nomura
- C30 - CRYSTAL GROWTH
Information Patent Application
SUBSTRATE FOR MAGNETIC RECORDING MEDIUM AND METHOD FOR MANUFACTURIN...
- Publication number 20090139959
- Publication date Jun 4, 2009
- Shin-Etsu Chemicals Co., Ltd.
- Naofumi Shinya
- G11 - INFORMATION STORAGE
Information Patent Application
Substrate for magnetic recording medium and method for manufacturin...
- Publication number 20050196587
- Publication date Sep 8, 2005
- Naofumi Shinya
- G11 - INFORMATION STORAGE

Norio YAMAGATA

Person

Patents Grantslast 30 patents

SiC crucible, SiC sintered body, and method of producing SiC single...

Method for preparing SiC single crystal

Method of producing SiC single crystal

Method for growing silicon carbide crystal

Method for growing silicon carbide crystal

Substrate for magnetic recording medium

Patents Applicationslast 30 patents

METHOD FOR PRODUCING SIC SINGLE CRYSTAL AND METHOD FOR SUPPRESSING...

METHOD FOR PRODUCING SiC SINGLE CRYSTAL

METHOD FOR PREPARING SiC SINGLE CRYSTAL

SiC CRUCIBLE, SiC SINTERED BODY, AND METHOD OF PRODUCING SiC SINGLE...

METHOD OF PRODUCING SiC SINGLE CRYSTAL

METHOD FOR GROWING SILICON CARBIDE CRYSTAL

METHOD FOR GROWING SILICON CARBIDE CRYSTAL

METHOD OF PRODUCING SiC SINGLE CRYSTAL

SUBSTRATE FOR MAGNETIC RECORDING MEDIUM AND METHOD FOR MANUFACTURIN...

Substrate for magnetic recording medium and method for manufacturin...