Noriyasu KAWANA

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Chino-shi, JP

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Patents Grantslast 30 patents

Information Patent Grant
Single crystal substrate with undulating ridges and silicon carbide...
- Patent number 11,404,269
- Issue date Aug 2, 2022
- Seiko Epson Corporation
- Yukimune Watanabe
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing single crystal substrate having a plurality of...
- Patent number 11,142,821
- Issue date Oct 12, 2021
- Seiko Epson Corporation
- Yukimune Watanabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing 3C-SiC epitaxial layer, 3C-SiC epitaxial subst...
- Patent number 9,758,902
- Issue date Sep 12, 2017
- Seiko Epson Corporation
- Yukimune Watanabe
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
Single Crystal Substrate, Method For Producing Single Crystal Subst...
- Publication number 20200140998
- Publication date May 7, 2020
- SEIKO EPSON CORPORATION
- Yukimune WATANABE
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Single Crystal Substrate And Silicon Carbide Substrate
- Publication number 20200135461
- Publication date Apr 30, 2020
- SEIKO EPSON CORPORATION
- Yukimune WATANABE
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING 3C-SIC EPITAXIAL LAYER, 3C-SIC EPITAXIAL SUBST...
- Publication number 20150108504
- Publication date Apr 23, 2015
- SEIKO EPSON CORPORATION
- Yukimune WATANABE
- C30 - CRYSTAL GROWTH