NORIYUKI IWAMURO

Person

NAGANO, JP

People

Patents Grantslast 30 patents

Information Patent Grant
High voltage semiconductor device
- Patent number 10,263,105
- Issue date Apr 16, 2019
- Fuji Electric Co., Ltd.
- Noriyuki Iwamuro
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical high voltage semiconductor apparatus and fabrication metho...
- Patent number 10,211,330
- Issue date Feb 19, 2019
- Fuji Electric Co., Ltd.
- Noriyuki Iwamuro
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor device and fabrication method of sili...
- Patent number 10,090,417
- Issue date Oct 2, 2018
- Fuji Electric Co., Ltd.
- Takashi Tsuji
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor device and fabrication method of sili...
- Patent number 9,799,732
- Issue date Oct 24, 2017
- Fuji Electric Co., Ltd.
- Takashi Tsuji
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical high voltage semiconductor apparatus and fabrication metho...
- Patent number 9,722,018
- Issue date Aug 1, 2017
- Fuji Electric Co., Ltd.
- Noriyuki Iwamuro
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor device and fabrication method thereof
- Patent number 9,673,313
- Issue date Jun 6, 2017
- Fuji Electric Co., Ltd.
- Atsushi Tanaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 9,627,486
- Issue date Apr 18, 2017
- Fuji Electric Co., Ltd.
- Noriyuki Iwamuro
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with SiC base layer
- Patent number 9,537,002
- Issue date Jan 3, 2017
- Fuji Electric Co., Ltd.
- Yuichi Harada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Wide bandgap semiconductor device
- Patent number 9,455,326
- Issue date Sep 27, 2016
- Fuji Electric Co., Ltd.
- Akimasa Kinoshita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage semiconductor apparatus
- Patent number 9,450,051
- Issue date Sep 20, 2016
- Fuji Electric Co., Ltd.
- Noriyuki Iwamuro
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical high-voltage semiconductor device and fabrication method t...
- Patent number 9,362,392
- Issue date Jun 7, 2016
- Fuji Electric Co., Ltd.
- Atsushi Tanaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 9,356,100
- Issue date May 31, 2016
- Fuji Electric Co., Ltd.
- Shinsuke Harada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Wide band gap semiconductor device and method for producing the same
- Patent number 9,252,266
- Issue date Feb 2, 2016
- Fuji Electric Co., Ltd.
- Noriyuki Iwamuro
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide vertical field effect transistor
- Patent number 9,184,230
- Issue date Nov 10, 2015
- Fuji Electric Co., Ltd.
- Yuichi Harada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication method of silicon carbide semiconductor device
- Patent number 9,040,402
- Issue date May 26, 2015
- Fuji Electric Co., Ltd.
- Masahide Goto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 8,779,504
- Issue date Jul 15, 2014
- Fuji Electric Co., Ltd.
- Noriyuki Iwamuro
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low on-resistance wide band gap semiconductor device and method for...
- Patent number 8,564,028
- Issue date Oct 22, 2013
- Fuji Electric Co., Ltd.
- Noriyuki Iwamuro
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 8,431,991
- Issue date Apr 30, 2013
- Fuji Electric Co., Ltd.
- Noriyuki Iwamuro
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium nitride semiconductor device and manufacturing method thereof
- Patent number 8,390,027
- Issue date Mar 5, 2013
- Fuji Electric Co., Ltd.
- Noriyuki Iwamuro
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 8,299,522
- Issue date Oct 30, 2012
- Fuji Electric Co., Ltd.
- Noriyuki Iwamuro
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
P-channel silicon carbide MOSFET
- Patent number 8,198,676
- Issue date Jun 12, 2012
- Fuji Electric Co., Ltd.
- Noriyuki Iwamuro
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing thereof
- Patent number 8,188,511
- Issue date May 29, 2012
- Fuji Electric Co., Ltd.
- Noriyuki Iwamuro
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method of the semiconductor...
- Patent number 8,138,542
- Issue date Mar 20, 2012
- Fuji Electric Co., Ltd.
- Koh Yoshikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 7,932,559
- Issue date Apr 26, 2011
- Fuji Electric Systems Co., Ltd.
- Noriyuki Iwamuro
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing method of a semiconductor device
- Patent number 7,713,794
- Issue date May 11, 2010
- Fuji Electric Device Technology Co., Ltd.
- Noriyuki Iwamuro
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method of the semiconductor...
- Patent number 7,535,059
- Issue date May 19, 2009
- Fuji Electric Holdings Co., Ltd.
- Koh Yoshikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having low on resistance high speed turn off a...
- Patent number 6,469,344
- Issue date Oct 22, 2002
- Fuji Electric Co., Ltd.
- Noriyuki Iwamuro
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 6,346,740
- Issue date Feb 12, 2002
- Fuji Electric Co., Ltd.
- Noriyuki Iwamuro
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Insulated gate thyristor
- Patent number 6,278,140
- Issue date Aug 21, 2001
- Fuji Electric Co., Ltd.
- Yuichi Harada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Insulated gate thyristor
- Patent number 6,091,087
- Issue date Jul 18, 2000
- Fuji Electric Co., Ltd.
- Noriyuki Iwamuro
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
VERTICAL HIGH VOLTAGE SEMICONDUCTOR APPARATUS AND FABRICATION METHO...
- Publication number 20170213886
- Publication date Jul 27, 2017
- Fuji Electric Co., Ltd.
- Noriyuki Iwamuro
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH VOLTAGE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20160155836
- Publication date Jun 2, 2016
- Fuji Electric Co., Ltd.
- NORIYUKI IWAMURO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH VOLTAGE SEMICONDUCTOR APPARATUS
- Publication number 20150340441
- Publication date Nov 26, 2015
- FUJI ELECTRIC CO., LTD.
- Noriyuki Iwamuro
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICE AND FABRICATION METHOD OF SILI...
- Publication number 20150144965
- Publication date May 28, 2015
- FUJI ELECTRIC CO., LTD.
- Takashi Tsuji
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICE AND FABRICATION METHOD OF SILI...
- Publication number 20150115287
- Publication date Apr 30, 2015
- NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY
- Takashi Tsuji
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20150108501
- Publication date Apr 23, 2015
- FUJI ELECTRIC CO., LTD.
- Noriyuki Iwamuro
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF
- Publication number 20150102363
- Publication date Apr 16, 2015
- National Instiute of Advanced Industrial Science and Technology
- Atsushi Tanaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL HIGH-VOLTAGE SEMICONDUCTOR DEVICE AND FABRICATION METHOD T...
- Publication number 20150076521
- Publication date Mar 19, 2015
- FUJI ELECTRIC CO., LTD.
- Atsushi Tanaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL HIGH VOLTAGE SEMICONDUCTOR APPARATUS AND FABRICATION METHO...
- Publication number 20150076519
- Publication date Mar 19, 2015
- FUJI ELECTRIC CO., LTD.
- Noriyuki Iwamuro
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20150069415
- Publication date Mar 12, 2015
- NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY
- Shinsuke Harada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FABRICATION METHOD OF SILICON CARBIDE SEMICONDUCTOR DEVICE
- Publication number 20150064898
- Publication date Mar 5, 2015
- FUJI ELECTRIC CO., LTD.
- Masahide Goto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20150053998
- Publication date Feb 26, 2015
- FUJI ELECTRIC CO., LTD.
- Yuichi Harada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WIDE BANDGAP SEMICONDUCTOR DEVICE
- Publication number 20140327019
- Publication date Nov 6, 2014
- Fuji Electric Co., Ltd.
- Akimasa Kinoshita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE VERTICAL FIELD EFFECT TRANSISTOR
- Publication number 20140008666
- Publication date Jan 9, 2014
- National Instituteof Advanced Industrial Science and Technology
- Yuichi Harada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WIDE BAND GAP SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING THE SAME
- Publication number 20130285072
- Publication date Oct 31, 2013
- Noriyuki IWAMURO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20130020633
- Publication date Jan 24, 2013
- Fuji Electric Co., Ltd.
- Noriyuki IWAMURO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20110163372
- Publication date Jul 7, 2011
- Fuji Electric Device Technology Co., LTD.
- Noriyuki IWAMURO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
P-CHANNEL SILICON CARBIDE MOSFET
- Publication number 20100224886
- Publication date Sep 9, 2010
- FUJI ELECTRIC SYSTEMS CO. LTD.
- Noriyuki IWAMURO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WIDE BAND GAP SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING THE SAME
- Publication number 20090283776
- Publication date Nov 19, 2009
- Fuji Electric Device Technology Co., LTD.
- Noriyuki IWAMURO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SEMICONDUCTOR...
- Publication number 20090206398
- Publication date Aug 20, 2009
- Fuji Electric Holdings Co., Ltd.
- Koh YOSHIKAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MANUFACTURING METHOD OF A SEMICONDUCTOR DEVICE
- Publication number 20090117724
- Publication date May 7, 2009
- Fuji Electric Device Technology Co., LTD.
- Noriyuki IWAMURO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20090114923
- Publication date May 7, 2009
- Fuji Electric Device Technology Co., LTD.
- Noriyuki IWAMURO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20090085166
- Publication date Apr 2, 2009
- Fuji Electric Device Technology Co., LTD.
- Noriyuki IWAMURO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20090085100
- Publication date Apr 2, 2009
- Fuji Electric Device Technology Co., LTD.
- Noriyuki IWAMURO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THEREOF
- Publication number 20080303057
- Publication date Dec 11, 2008
- Fuji Electric Device Technology Co., LTD.
- Noriyuki IWAMURO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SEMICONDUCTOR...
- Publication number 20070158740
- Publication date Jul 12, 2007
- Fuji Electric Holdings Co., Ltd.
- Koh Yoshikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device having low on resistance high speed turn off a...
- Publication number 20020053696
- Publication date May 9, 2002
- NORIYUKI IWAMURO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH-VOLTAGE SILICON DIODE
- Publication number 20010045624
- Publication date Nov 29, 2001
- NORIYUKI IWAMURO
- H01 - BASIC ELECTRIC ELEMENTS

NORIYUKI IWAMURO

Person

Patents Grantslast 30 patents

High voltage semiconductor device

Vertical high voltage semiconductor apparatus and fabrication metho...

Silicon carbide semiconductor device and fabrication method of sili...

Silicon carbide semiconductor device and fabrication method of sili...

Vertical high voltage semiconductor apparatus and fabrication metho...

Silicon carbide semiconductor device and fabrication method thereof

Semiconductor device

Semiconductor device with SiC base layer

Wide bandgap semiconductor device

High voltage semiconductor apparatus

Vertical high-voltage semiconductor device and fabrication method t...

Semiconductor device

Wide band gap semiconductor device and method for producing the same

Silicon carbide vertical field effect transistor

Fabrication method of silicon carbide semiconductor device

Semiconductor device

Low on-resistance wide band gap semiconductor device and method for...

Semiconductor device

Gallium nitride semiconductor device and manufacturing method thereof

Semiconductor device

P-channel silicon carbide MOSFET

Semiconductor device and method of manufacturing thereof

Semiconductor device and manufacturing method of the semiconductor...

Semiconductor device

Manufacturing method of a semiconductor device

Semiconductor device and manufacturing method of the semiconductor...

Semiconductor device having low on resistance high speed turn off a...

Semiconductor device

Insulated gate thyristor

Insulated gate thyristor

Patents Applicationslast 30 patents

VERTICAL HIGH VOLTAGE SEMICONDUCTOR APPARATUS AND FABRICATION METHO...

HIGH VOLTAGE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

HIGH VOLTAGE SEMICONDUCTOR APPARATUS

SILICON CARBIDE SEMICONDUCTOR DEVICE AND FABRICATION METHOD OF SILI...

SILICON CARBIDE SEMICONDUCTOR DEVICE AND FABRICATION METHOD OF SILI...

SEMICONDUCTOR DEVICE

SILICON CARBIDE SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF

VERTICAL HIGH-VOLTAGE SEMICONDUCTOR DEVICE AND FABRICATION METHOD T...

VERTICAL HIGH VOLTAGE SEMICONDUCTOR APPARATUS AND FABRICATION METHO...

SEMICONDUCTOR DEVICE

FABRICATION METHOD OF SILICON CARBIDE SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

WIDE BANDGAP SEMICONDUCTOR DEVICE

SILICON CARBIDE VERTICAL FIELD EFFECT TRANSISTOR

WIDE BAND GAP SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING THE SAME

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

P-CHANNEL SILICON CARBIDE MOSFET

WIDE BAND GAP SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING THE SAME

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SEMICONDUCTOR...

MANUFACTURING METHOD OF A SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

GALLIUM NITRIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THEREOF

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SEMICONDUCTOR...

Semiconductor device having low on resistance high speed turn off a...

HIGH-VOLTAGE SILICON DIODE