Oana Julia Spulber

Person

Neubiberg, DE

People

Patents Grantslast 30 patents

Information Patent Grant
Method of manufacturing a semiconductor device comprising first and...
- Patent number 11,081,544
- Issue date Aug 3, 2021
- Infineon Technologies AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Insulated gate bipolar transistor having first and second field sto...
- Patent number 11,004,963
- Issue date May 11, 2021
- Infineon Technologies AG
- Oana Julia Spulber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor device with trench gate structure and...
- Patent number 10,734,484
- Issue date Aug 4, 2020
- Infineon Technologies AG
- Andreas Meiser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
N-channel bipolar power semiconductor device with P-layer in the dr...
- Patent number 10,546,939
- Issue date Jan 28, 2020
- Infineon Technologies AG
- Roman Baburske
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
N-channel bipolar power semiconductor device with p-layer in the dr...
- Patent number 10,332,973
- Issue date Jun 25, 2019
- Infineon Technologies AG
- Roman Baburske
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
n-channel bipolar power semiconductor device with p-layer in the dr...
- Patent number 9,978,851
- Issue date May 22, 2018
- Infineon Technologies AG
- Roman Baburske
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING A FIELD STOP REGION
- Publication number 20220406600
- Publication date Dec 22, 2022
- Moriz Jelinek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicon Carbide Semiconductor Device with Trench Gate Structure and...
- Publication number 20190296110
- Publication date Sep 26, 2019
- INFINEON TECHNOLOGIES AG
- Andreas Meiser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
N-CHANNEL BIPOLAR POWER SEMICONDUCTOR DEVICE WITH P-LAYER IN THE DR...
- Publication number 20190288088
- Publication date Sep 19, 2019
- INFINEON TECHNOLOGIES AG
- Roman Baburske
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Insulated Gate Bipolar Transistor Having First and Second Field Sto...
- Publication number 20190165151
- Publication date May 30, 2019
- Oana Julia Spulber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Manufacturing a Semiconductor Device Comprising First and...
- Publication number 20190165090
- Publication date May 30, 2019
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
N-CHANNEL BIPOLAR POWER SEMICONDUCTOR DEVICE WITH P-LAYER IN THE DR...
- Publication number 20180269304
- Publication date Sep 20, 2018
- INFINEON TECHNOLOGIES AG
- Roman Baburske
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
N-CHANNEL BIPOLAR POWER SEMICONDUCTOR DEVICE WITH P-LAYER IN THE DR...
- Publication number 20180019319
- Publication date Jan 18, 2018
- INFINEON TECHNOLOGIES AG
- Roman Baburske
- H01 - BASIC ELECTRIC ELEMENTS

Oana Julia Spulber

Person

Patents Grantslast 30 patents

Method of manufacturing a semiconductor device comprising first and...

Insulated gate bipolar transistor having first and second field sto...

Silicon carbide semiconductor device with trench gate structure and...

N-channel bipolar power semiconductor device with P-layer in the dr...

N-channel bipolar power semiconductor device with p-layer in the dr...

n-channel bipolar power semiconductor device with p-layer in the dr...

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE INCLUDING A FIELD STOP REGION

Silicon Carbide Semiconductor Device with Trench Gate Structure and...

N-CHANNEL BIPOLAR POWER SEMICONDUCTOR DEVICE WITH P-LAYER IN THE DR...

Insulated Gate Bipolar Transistor Having First and Second Field Sto...

Method of Manufacturing a Semiconductor Device Comprising First and...

N-CHANNEL BIPOLAR POWER SEMICONDUCTOR DEVICE WITH P-LAYER IN THE DR...

N-CHANNEL BIPOLAR POWER SEMICONDUCTOR DEVICE WITH P-LAYER IN THE DR...