Olga Kryliouk

Person

Gainesville, FL, US

People

Patents Grantslast 30 patents

Information Patent Grant
Method of decontamination of process chamber after in-situ chamber...
- Patent number 9,932,670
- Issue date Apr 3, 2018
- Applied Materials, Inc.
- Jie Su
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Coalesced nanowire structures with interstitial voids and method fo...
- Patent number 9,570,651
- Issue date Feb 14, 2017
- GLO AB
- Patrik Svensson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanopyramid sized opto-electronic structure and method for manufact...
- Patent number 9,444,007
- Issue date Sep 13, 2016
- GLO AB
- Olga Kryliouk
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a group III-nitride crystalline film on a pattern...
- Patent number 9,431,477
- Issue date Aug 30, 2016
- Applied Materials, Inc.
- Olga Kryliouk
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Formation of group III-V material layers on patterned substrates
- Patent number 9,196,795
- Issue date Nov 24, 2015
- Applied Materials, Inc.
- Jie Su
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Coalesced nanowire structures with interstitial voids and method fo...
- Patent number 9,035,278
- Issue date May 19, 2015
- GLO AB
- Patrik Svensson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III-nitrides on Si substrates using a nanostructured interlayer
- Patent number 8,946,674
- Issue date Feb 3, 2015
- University of Florida Research Foundation, Inc.
- Olga Kryliouk
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanopyramid sized opto-electronic structure and method for manufact...
- Patent number 8,921,141
- Issue date Dec 30, 2014
- GLO AB
- Olga Kryliouk
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Formation of group III-V material layers on patterned substrates
- Patent number 8,765,501
- Issue date Jul 1, 2014
- Applied Materials, Inc.
- Jie Su
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Growth of group III-V material layers by spatially confined epitaxy
- Patent number 8,716,049
- Issue date May 6, 2014
- Applied Materials, Inc.
- Jie Su
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
HVPE chamber hardware
- Patent number 8,568,529
- Issue date Oct 29, 2013
- Applied Materials, Inc.
- Tetsuya Ishikawa
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of forming a group III-nitride crystalline film on a pattern...
- Patent number 8,507,304
- Issue date Aug 13, 2013
- Applied Materials, Inc.
- Olga Kryliouk
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
HVPE precursor source hardware
- Patent number 8,491,720
- Issue date Jul 23, 2013
- Applied Materials, Inc.
- Tetsuya Ishikawa
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Group III-nitrides on SI substrates using a nanostructured interlayer
- Patent number 8,268,646
- Issue date Sep 18, 2012
- University of Florida Research Foundation, Inc.
- Olga Kryliouk
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dome assembly for a deposition chamber
- Patent number D664172
- Issue date Jul 24, 2012
- Applied Materials, Inc.
- Tetsuya Ishikawa
- D15 - Machines not elsewhere specified
Information Patent Grant
Crack free multilayered devices, methods of manufacture thereof and...
- Patent number 8,222,057
- Issue date Jul 17, 2012
- University of Florida Research Foundation, Inc.
- Olga Kryliouk
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for fabricating group III nitride structures with a cluster...
- Patent number 8,183,132
- Issue date May 22, 2012
- Applied Materials, Inc.
- Sandeep Nijhawan
- C30 - CRYSTAL GROWTH
Information Patent Grant
Indium surfactant assisted HVPE of high quality gallium nitride and...
- Patent number 8,148,241
- Issue date Apr 3, 2012
- Applied Materials, Inc.
- Jie Su
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Substrate pretreatment for subsequent high temperature group III de...
- Patent number 8,138,069
- Issue date Mar 20, 2012
- Applied Materials, Inc.
- Yuriy Melnik
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
MOCVD single chamber split process for LED manufacturing
- Patent number 8,110,889
- Issue date Feb 7, 2012
- Applied Materials, Inc.
- Olga Kryliouk
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for growth of nitrogen face (N-face) polarity compound nitri...
- Patent number 8,080,466
- Issue date Dec 20, 2011
- Applied Materials, Inc.
- Jie Su
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
GaN growth on Si using ZnO buffer layer
- Patent number 7,001,791
- Issue date Feb 21, 2006
- University of Florida
- Olga Kryliouk
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III-nitride on Si using epitaxial BP buffer layer
- Patent number 6,967,355
- Issue date Nov 22, 2005
- University of Florida Research Foundation, Inc.
- Olga Kryliouk
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III-nitride growth on Si substrate using oxynitride interlayer
- Patent number 6,906,351
- Issue date Jun 14, 2005
- University of Florida Research Foundation, Inc.
- Olga Kryliouk
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and apparatus for producing group-III nitrides
- Patent number 6,350,666
- Issue date Feb 26, 2002
- University of Florida
- Olga Kryliouk
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method and apparatus for producing group-III nitrides
- Patent number 6,218,280
- Issue date Apr 17, 2001
- University of Florida
- Olga Kryliouk
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
COALESCED NANOWIRE STRUCTURES WITH INTERSTITIAL VOIDS AND METHOD FO...
- Publication number 20170170261
- Publication date Jun 15, 2017
- GLO AB
- Patrik SVENSSON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COALESCED NANOWIRE STRUCTURES WITH INTERSTITIAL VOIDS AND METHOD FO...
- Publication number 20150221821
- Publication date Aug 6, 2015
- GLO AB
- Patrik SVENSSON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Nanopyramid Sized Opto-Electronic Structure and Method for Manufact...
- Publication number 20150207033
- Publication date Jul 23, 2015
- GLO AB
- Olga KRYLIOUK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMATION OF GROUP III-V MATERIAL LAYERS ON PATTERNED SUBSTRATES
- Publication number 20140367696
- Publication date Dec 18, 2014
- Jie Su
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF DECONTAMINATION OF PROCESS CHAMBER AFTER IN-SITU CHAMBER...
- Publication number 20140116470
- Publication date May 1, 2014
- Applied Materials, Inc.
- Jie SU
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Nanopyramid Sized Opto-Electronic Structure and Method for Manufact...
- Publication number 20140077220
- Publication date Mar 20, 2014
- GLO AB
- Olga KRYLIOUK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COALESCED NANOWIRE STRUCTURES WITH INTERSTITIAL VOIDS AND METHOD FO...
- Publication number 20130075693
- Publication date Mar 28, 2013
- GLO AB
- Patrik SVENSSON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PLASMA-ASSISTED MOCVD FABRICATION OF P-TYPE GROUP III-NITRIDE MATER...
- Publication number 20120258580
- Publication date Oct 11, 2012
- Applied Materials, Inc.
- Karl Brown
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
MOCVD FABRICATION OF GROUP III-NITRIDE MATERIALS USING IN-SITU GENE...
- Publication number 20120258581
- Publication date Oct 11, 2012
- Applied Materials, Inc.
- Karl Brown
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
LIGHT EMITTING DIODE WITH ENHANCED QUANTUM EFFICIENCY AND METHOD OF...
- Publication number 20120235116
- Publication date Sep 20, 2012
- Jie Su
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUBSTRATE PRETREATMENT FOR SUBSEQUENT HIGH TEMPERATURE GROUP III DE...
- Publication number 20120156863
- Publication date Jun 21, 2012
- Applied Materials, Inc.
- Yuriy Melnik
- C30 - CRYSTAL GROWTH
Information Patent Application
MOCVD SINGLE CHAMBER SPLIT PROCESS FOR LED MANUFACTURING
- Publication number 20120111272
- Publication date May 10, 2012
- Applied Materials, Inc.
- Olga Kryliouk
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
GROUP III-NITRIDE N-TYPE DOPING
- Publication number 20110263111
- Publication date Oct 27, 2011
- Yuriy Melnik
- C30 - CRYSTAL GROWTH
Information Patent Application
FORMATION OF GROUP III-V MATERIAL LAYERS ON PATTERNED SUBSTRATES
- Publication number 20110210425
- Publication date Sep 1, 2011
- Jie Su
- C30 - CRYSTAL GROWTH
Information Patent Application
GROWTH OF GROUP III-V MATERIAL LAYERS BY SPATIALLY CONFINED EPITAXY
- Publication number 20110204378
- Publication date Aug 25, 2011
- Jie Su
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RECLAMATION OF SCRAP MATERIALS FOR LED MANUFACTURING
- Publication number 20110171758
- Publication date Jul 14, 2011
- Applied Materials, Inc.
- JIE SU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANO-SPHERICAL GROUP III-NITRIDE MATERIALS
- Publication number 20110140071
- Publication date Jun 16, 2011
- Olga Kryliouk
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF DECONTAMINATION OF PROCESS CHAMBER AFTER IN-SITU CHAMBER...
- Publication number 20110117728
- Publication date May 19, 2011
- Applied Materials, Inc.
- Jie Su
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD FOR IN-SITU CLEANING OF DEPOSITION SYSTEMS
- Publication number 20110079251
- Publication date Apr 7, 2011
- Olga Kryliouk
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
NANOCRYSTALLINE DIAMOND-STRUCTURED CARBON COATING OF SILICON CARBIDE
- Publication number 20110076400
- Publication date Mar 31, 2011
- Applied Materials, Inc.
- Olga Kryliouk
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
CRACK FREE MULTILAYERED DEVICES, METHODS OF MANUFACTURE THEREOF AND...
- Publication number 20110042683
- Publication date Feb 24, 2011
- University of Florida Research Foundation, Inc.
- Olga Kryliouk
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND APPARATUS FOR DRY CLEANING A COOLED SHOWERHEAD
- Publication number 20110030615
- Publication date Feb 10, 2011
- Applied Materials, Inc.
- KEVIN GRIFFIN
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
GROWTH OF N-FACE LED WITH INTEGRATED PROCESSING SYSTEM
- Publication number 20110033966
- Publication date Feb 10, 2011
- Applied Materials, Inc.
- JIE SU
- C30 - CRYSTAL GROWTH
Information Patent Application
INDIUM SURFACTANT ASSISTED HVPE OF HIGH QUALITY GALLIUM NITRIDE AND...
- Publication number 20110027974
- Publication date Feb 3, 2011
- Applied Materials, Inc.
- Jie Su
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF FORMING LED STRUCTURES
- Publication number 20110027973
- Publication date Feb 3, 2011
- Applied Materials, Inc.
- Jie Su
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD OF FORMING A GROUP III-NITRIDE CRYSTALLINE FILM ON A PATTERN...
- Publication number 20110012109
- Publication date Jan 20, 2011
- Applied Materials, Inc.
- Olga Kryliouk
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING IN-SITU PRE-GaN DEPOSITION LAYER IN HVPE
- Publication number 20100279020
- Publication date Nov 4, 2010
- Applied Materials, Inc.
- Yuriy Melnik
- C30 - CRYSTAL GROWTH
Information Patent Application
DECONTAMINATION OF MOCVD CHAMBER USING NH3 PURGE AFTER IN-SITU CLEA...
- Publication number 20100273291
- Publication date Oct 28, 2010
- Applied Materials, Inc.
- Olga Kryliouk
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
MOCVD SINGLE CHAMBER SPLIT PROCESS FOR LED MANUFACTURING
- Publication number 20100273290
- Publication date Oct 28, 2010
- Applied Materials, Inc.
- Olga Kryliouk
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
SUBSTRATE PRETREATMENT FOR SUBSEQUENT HIGH TEMPERATURE GROUP III DE...
- Publication number 20100273318
- Publication date Oct 28, 2010
- Applied Materials, Inc.
- Yuriy Melnik
- C30 - CRYSTAL GROWTH

Olga Kryliouk

Person

Patents Grantslast 30 patents

Method of decontamination of process chamber after in-situ chamber...

Coalesced nanowire structures with interstitial voids and method fo...

Nanopyramid sized opto-electronic structure and method for manufact...

Method of forming a group III-nitride crystalline film on a pattern...

Formation of group III-V material layers on patterned substrates

Coalesced nanowire structures with interstitial voids and method fo...

Group III-nitrides on Si substrates using a nanostructured interlayer

Nanopyramid sized opto-electronic structure and method for manufact...

Formation of group III-V material layers on patterned substrates

Growth of group III-V material layers by spatially confined epitaxy

HVPE chamber hardware

Method of forming a group III-nitride crystalline film on a pattern...

HVPE precursor source hardware

Group III-nitrides on SI substrates using a nanostructured interlayer

Dome assembly for a deposition chamber

Crack free multilayered devices, methods of manufacture thereof and...

Methods for fabricating group III nitride structures with a cluster...

Indium surfactant assisted HVPE of high quality gallium nitride and...

Substrate pretreatment for subsequent high temperature group III de...

MOCVD single chamber split process for LED manufacturing

Method for growth of nitrogen face (N-face) polarity compound nitri...

GaN growth on Si using ZnO buffer layer

Group III-nitride on Si using epitaxial BP buffer layer

Group III-nitride growth on Si substrate using oxynitride interlayer

Method and apparatus for producing group-III nitrides

Method and apparatus for producing group-III nitrides

Patents Applicationslast 30 patents

COALESCED NANOWIRE STRUCTURES WITH INTERSTITIAL VOIDS AND METHOD FO...

COALESCED NANOWIRE STRUCTURES WITH INTERSTITIAL VOIDS AND METHOD FO...

Nanopyramid Sized Opto-Electronic Structure and Method for Manufact...

FORMATION OF GROUP III-V MATERIAL LAYERS ON PATTERNED SUBSTRATES

METHOD OF DECONTAMINATION OF PROCESS CHAMBER AFTER IN-SITU CHAMBER...

Nanopyramid Sized Opto-Electronic Structure and Method for Manufact...

COALESCED NANOWIRE STRUCTURES WITH INTERSTITIAL VOIDS AND METHOD FO...

PLASMA-ASSISTED MOCVD FABRICATION OF P-TYPE GROUP III-NITRIDE MATER...

MOCVD FABRICATION OF GROUP III-NITRIDE MATERIALS USING IN-SITU GENE...

LIGHT EMITTING DIODE WITH ENHANCED QUANTUM EFFICIENCY AND METHOD OF...

SUBSTRATE PRETREATMENT FOR SUBSEQUENT HIGH TEMPERATURE GROUP III DE...

MOCVD SINGLE CHAMBER SPLIT PROCESS FOR LED MANUFACTURING

GROUP III-NITRIDE N-TYPE DOPING

FORMATION OF GROUP III-V MATERIAL LAYERS ON PATTERNED SUBSTRATES

GROWTH OF GROUP III-V MATERIAL LAYERS BY SPATIALLY CONFINED EPITAXY

RECLAMATION OF SCRAP MATERIALS FOR LED MANUFACTURING

NANO-SPHERICAL GROUP III-NITRIDE MATERIALS

METHOD OF DECONTAMINATION OF PROCESS CHAMBER AFTER IN-SITU CHAMBER...

METHOD FOR IN-SITU CLEANING OF DEPOSITION SYSTEMS

NANOCRYSTALLINE DIAMOND-STRUCTURED CARBON COATING OF SILICON CARBIDE

CRACK FREE MULTILAYERED DEVICES, METHODS OF MANUFACTURE THEREOF AND...

METHOD AND APPARATUS FOR DRY CLEANING A COOLED SHOWERHEAD

GROWTH OF N-FACE LED WITH INTEGRATED PROCESSING SYSTEM

INDIUM SURFACTANT ASSISTED HVPE OF HIGH QUALITY GALLIUM NITRIDE AND...

METHOD OF FORMING LED STRUCTURES

METHOD OF FORMING A GROUP III-NITRIDE CRYSTALLINE FILM ON A PATTERN...

METHOD OF FORMING IN-SITU PRE-GaN DEPOSITION LAYER IN HVPE

DECONTAMINATION OF MOCVD CHAMBER USING NH3 PURGE AFTER IN-SITU CLEA...

MOCVD SINGLE CHAMBER SPLIT PROCESS FOR LED MANUFACTURING

SUBSTRATE PRETREATMENT FOR SUBSEQUENT HIGH TEMPERATURE GROUP III DE...