Oliver HAEBERLEN

Person

St. Magdalen, AT

People

Patents Grantslast 30 patents

Information Patent Grant
Group III nitride-based transistor device
- Patent number 12,159,918
- Issue date Dec 3, 2024
- Infineon Technologies Austria AG
- Clemens Ostermaier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor device
- Patent number 12,094,963
- Issue date Sep 17, 2024
- Infineon Technologies Austria AG
- Oliver Haeberlen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High electron mobility transistor with doped semiconductor region i...
- Patent number 11,929,430
- Issue date Mar 12, 2024
- Infineon Technologies Austria AG
- Thomas Detzel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Enhancement mode transistor device
- Patent number 11,721,754
- Issue date Aug 8, 2023
- Infineon Technologies Austria AG
- Gerhard Prechtl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and inverter
- Patent number 11,688,777
- Issue date Jun 27, 2023
- Infineon Technologies Austria AG
- Oliver Haeberlen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Enhancement mode Group III nitride-based transistor device
- Patent number 11,417,758
- Issue date Aug 16, 2022
- Infineon Technologies Austria AG
- Gerhard Prechtl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III nitride-based transistor device and method of fabricating...
- Patent number 11,349,012
- Issue date May 31, 2022
- Infineon Technologies Austria AG
- Clemens Ostermaier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High electron mobility transistor with doped semiconductor region i...
- Patent number 11,257,941
- Issue date Feb 22, 2022
- Infineon Technologies Austria AG
- Thomas Detzel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device comprising a gradually increasing field dielec...
- Patent number 11,069,782
- Issue date Jul 20, 2021
- Infineon Technologies AG
- Andreas Meiser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor device
- Patent number 11,004,966
- Issue date May 11, 2021
- Infineon Technologies Austria AG
- Oliver Haeberlen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High electron mobility transistor with dual thickness barrier layer
- Patent number 10,840,353
- Issue date Nov 17, 2020
- Infineon Technologies Austria AG
- Gilberto Curatola
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device including a semiconductor chip monolithically integrated wit...
- Patent number 10,763,246
- Issue date Sep 1, 2020
- Infineon Technologies AG
- Ralf Otremba
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
System and method for a GaN-based start-up circuit
- Patent number 10,680,069
- Issue date Jun 9, 2020
- Infineon Technologies Austria AG
- Oliver Haeberlen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High Electron Mobility Transistor with dual thickness barrier layer
- Patent number 10,541,313
- Issue date Jan 21, 2020
- Infineon Technologies Austria AG
- Gilberto Curatola
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High electron mobility transistor with deep charge carrier gas cont...
- Patent number 10,516,023
- Issue date Dec 24, 2019
- Infineon Technologies Austria AG
- Gilberto Curatola
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device comprising a gradually increasing field dielec...
- Patent number 10,483,360
- Issue date Nov 19, 2019
- Infineon Technologies AG
- Andreas Meiser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device
- Patent number 10,418,319
- Issue date Sep 17, 2019
- Infineon Technologies AG
- Oliver Haeberlen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electronic component
- Patent number 10,290,566
- Issue date May 14, 2019
- Infineon Technologies Austria AG
- Ralf Otremba
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power MOSFET semiconductor
- Patent number 10,283,634
- Issue date May 7, 2019
- Infineon Technologies Austria AG
- Oliver Haeberlen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor wafer and method
- Patent number 10,199,216
- Issue date Feb 5, 2019
- Infineon Technologies Austria AG
- Clemens Ostermaier
- C30 - CRYSTAL GROWTH
Information Patent Grant
Semiconductor device
- Patent number 10,177,061
- Issue date Jan 8, 2019
- Infineon Technologies Austria AG
- Gerhard Prechtl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 10,153,362
- Issue date Dec 11, 2018
- Infineon Technologies Austria AG
- Gilberto Curatola
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-planar normally off compound semiconductor device
- Patent number 10,090,406
- Issue date Oct 2, 2018
- Infineon Technologies Austria AG
- Gerhard Prechtl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Interdigit device on leadframe for evenly distributed current flow
- Patent number 10,074,597
- Issue date Sep 11, 2018
- Infineon Technologies Austria AG
- Eung San Cho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lead frame connected with heterojunction semiconductor body
- Patent number 10,068,780
- Issue date Sep 4, 2018
- Infineon Technologies Austria AG
- Gerhard Prechtl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Water and ion barrier for the periphery of III-V semiconductor dies
- Patent number 10,062,630
- Issue date Aug 28, 2018
- Infineon Technologies Austria AG
- Gerhard Prechtl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High electron mobility transistor with carrier injection mitigation...
- Patent number 10,038,085
- Issue date Jul 31, 2018
- Infineon Technologies Austria AG
- Gilberto Curatola
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device comprising a gradually increasing field dielec...
- Patent number 9,893,158
- Issue date Feb 13, 2018
- Infineon Technologies AG
- Andreas Meiser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 9,847,394
- Issue date Dec 19, 2017
- Infineon Technologies Austria AG
- Gerhard Prechtl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-nitride bidirectional device
- Patent number 9,837,522
- Issue date Dec 5, 2017
- Infineon Technologies Austria AG
- Gerhard Prechtl
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
HIGH ELECTRON MOBILITY TRANSISTOR WITH DOPED SEMICONDUCTOR REGION I...
- Publication number 20240222488
- Publication date Jul 4, 2024
- Infineon Technologies Austria AG
- Thomas Detzel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WATER AND ION BARRIER FOR III-V SEMICONDUCTOR DEVICES
- Publication number 20230163209
- Publication date May 25, 2023
- Infineon Technologies Austria AG
- Gerhard Prechtl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ENHANCEMENT MODE TRANSISTOR DEVICE
- Publication number 20220344501
- Publication date Oct 27, 2022
- Gerhard Prechtl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Group III Nitride-Based Transistor Device
- Publication number 20220271147
- Publication date Aug 25, 2022
- Clemens Ostermaier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High Electron Mobility Transistor with Doped Semiconductor Region i...
- Publication number 20220123138
- Publication date Apr 21, 2022
- Infineon Technologies Austria AG
- Thomas Detzel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR DEVICE
- Publication number 20210313462
- Publication date Oct 7, 2021
- Infineon Technologies Austria AG
- Oliver Haeberlen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High Electron Mobility Transistor with Doped Semiconductor Region i...
- Publication number 20210234028
- Publication date Jul 29, 2021
- Thomas Detzel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Inverter
- Publication number 20210134968
- Publication date May 6, 2021
- Oliver Haeberlen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Enhancement Mode Group III Nitride-Based Transistor Device
- Publication number 20210050439
- Publication date Feb 18, 2021
- Gerhard Prechtl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Group III Nitride-Based Transistor Device and Method of Fabricating...
- Publication number 20200321447
- Publication date Oct 8, 2020
- Clemens Ostermaier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High Electron Mobility Transistor with Dual Thickness Barrier Layer
- Publication number 20200119162
- Publication date Apr 16, 2020
- Gilberto Curatola
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SYSTEM AND METHOD FOR A GAN-BASED START-UP CIRCUIT
- Publication number 20200044032
- Publication date Feb 6, 2020
- Infineon Technologies Austria AG
- Oliver Haeberlen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE COMPRISING A GRADUALLY INCREASING FIELD DIELEC...
- Publication number 20200044036
- Publication date Feb 6, 2020
- INFINEON TECHNOLOGIES AG
- Andreas MEISER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High Electron Mobility Transistor with Deep Charge Carrier Gas Cont...
- Publication number 20190280093
- Publication date Sep 12, 2019
- Infineon Technologies Austria AG
- Gilberto Curatola
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High Electron Mobility Transistor with Dual Thickness Barrier Layer
- Publication number 20190280100
- Publication date Sep 12, 2019
- Infineon Technologies Austria AG
- Gilberto Curatola
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTERDIGIT DEVICE ON LEADFRAME FOR EVENLY DISTRIBUTED CURRENT FLOW
- Publication number 20180211904
- Publication date Jul 26, 2018
- Infineon Technologies Americas Corp.
- Eung San Cho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE COMPRISING A GRADUALLY INCREASING FIELD DIELEC...
- Publication number 20180097074
- Publication date Apr 5, 2018
- INFINEON TECHNOLOGIES AG
- Andreas MEISER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER MOSFET SEMICONDUCTOR
- Publication number 20170373180
- Publication date Dec 28, 2017
- Infineon Technologies Austria AG
- Oliver Haeberlen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Device Including a Semiconductor Chip Monolithically Integrated wit...
- Publication number 20170317001
- Publication date Nov 2, 2017
- INFINEON TECHNOLOGIES AG
- Ralf Otremba
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Redirecting solder material to visually inspectable package surface
- Publication number 20170278762
- Publication date Sep 28, 2017
- INFINEON TECHNOLOGIES AG
- Angela KESSLER
- G01 - MEASURING TESTING
Information Patent Application
High Electron Mobility Transistor with Carrier Injection Mitigation...
- Publication number 20170200817
- Publication date Jul 13, 2017
- Infineon Technologies Austria AG
- Gilberto Curatola
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Water and Ion Barrier for the Periphery of III-V Semiconductor Dies
- Publication number 20170194230
- Publication date Jul 6, 2017
- Infineon Technologies Austria AG
- Gerhard Prechtl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor wafer and method
- Publication number 20170186600
- Publication date Jun 29, 2017
- Infineon Technologies Austria AG
- Clemens Ostermaier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD
- Publication number 20170148883
- Publication date May 25, 2017
- Infineon Technologies Austria AG
- Gilberto Curatola
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device
- Publication number 20170125572
- Publication date May 4, 2017
- Infineon Technologies Austria AG
- Gilberto Curatola
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Switch Circuit, Semiconductor Device and Method
- Publication number 20170103978
- Publication date Apr 13, 2017
- Infineon Technologies Austria AG
- Gerhard Prechtl
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Application
Semiconductor Device
- Publication number 20170104076
- Publication date Apr 13, 2017
- Infineon Technologies Austria AG
- Gerhard Prechtl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Water and Ion Barrier for III-V Semiconductor Devices
- Publication number 20170092753
- Publication date Mar 30, 2017
- Infineon Technologies Austria AG
- Gerhard Prechtl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE COMPRISING A GRADUALLY INCREASING FIELD DIELEC...
- Publication number 20170033191
- Publication date Feb 2, 2017
- INFINEON TECHNOLOGIES AG
- Andreas MEISER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Component and Manufacturing Method Therefor
- Publication number 20170025523
- Publication date Jan 26, 2017
- Infineon Technologies Austria AG
- Gerhard Prechtl
- H01 - BASIC ELECTRIC ELEMENTS

Oliver HAEBERLEN

Person

Patents Grantslast 30 patents

Group III nitride-based transistor device

Nitride semiconductor device

High electron mobility transistor with doped semiconductor region i...

Enhancement mode transistor device

Semiconductor device and inverter

Enhancement mode Group III nitride-based transistor device

Group III nitride-based transistor device and method of fabricating...

High electron mobility transistor with doped semiconductor region i...

Semiconductor device comprising a gradually increasing field dielec...

Nitride semiconductor device

High electron mobility transistor with dual thickness barrier layer

Device including a semiconductor chip monolithically integrated wit...

System and method for a GaN-based start-up circuit

High Electron Mobility Transistor with dual thickness barrier layer

High electron mobility transistor with deep charge carrier gas cont...

Semiconductor device comprising a gradually increasing field dielec...

Method of manufacturing a semiconductor device

Electronic component

Power MOSFET semiconductor

Semiconductor wafer and method

Semiconductor device

Semiconductor device

Non-planar normally off compound semiconductor device

Interdigit device on leadframe for evenly distributed current flow

Lead frame connected with heterojunction semiconductor body

Water and ion barrier for the periphery of III-V semiconductor dies

High electron mobility transistor with carrier injection mitigation...

Semiconductor device comprising a gradually increasing field dielec...

Semiconductor device

III-nitride bidirectional device

Patents Applicationslast 30 patents

HIGH ELECTRON MOBILITY TRANSISTOR WITH DOPED SEMICONDUCTOR REGION I...

WATER AND ION BARRIER FOR III-V SEMICONDUCTOR DEVICES

ENHANCEMENT MODE TRANSISTOR DEVICE

Group III Nitride-Based Transistor Device

High Electron Mobility Transistor with Doped Semiconductor Region i...

NITRIDE SEMICONDUCTOR DEVICE

High Electron Mobility Transistor with Doped Semiconductor Region i...

Semiconductor Device and Inverter

Enhancement Mode Group III Nitride-Based Transistor Device

Group III Nitride-Based Transistor Device and Method of Fabricating...

High Electron Mobility Transistor with Dual Thickness Barrier Layer

SYSTEM AND METHOD FOR A GAN-BASED START-UP CIRCUIT

SEMICONDUCTOR DEVICE COMPRISING A GRADUALLY INCREASING FIELD DIELEC...

High Electron Mobility Transistor with Deep Charge Carrier Gas Cont...

High Electron Mobility Transistor with Dual Thickness Barrier Layer

INTERDIGIT DEVICE ON LEADFRAME FOR EVENLY DISTRIBUTED CURRENT FLOW

SEMICONDUCTOR DEVICE COMPRISING A GRADUALLY INCREASING FIELD DIELEC...

POWER MOSFET SEMICONDUCTOR

Device Including a Semiconductor Chip Monolithically Integrated wit...

Redirecting solder material to visually inspectable package surface

High Electron Mobility Transistor with Carrier Injection Mitigation...

Water and Ion Barrier for the Periphery of III-V Semiconductor Dies

Semiconductor wafer and method

SEMICONDUCTOR DEVICE AND METHOD

Semiconductor Device

Switch Circuit, Semiconductor Device and Method

Semiconductor Device

Water and Ion Barrier for III-V Semiconductor Devices

SEMICONDUCTOR DEVICE COMPRISING A GRADUALLY INCREASING FIELD DIELEC...

Semiconductor Component and Manufacturing Method Therefor