Oliver Häberlen

Person

Villach, AT

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device having a lateral transistor device and an inve...
- Patent number 12,068,379
- Issue date Aug 20, 2024
- Infineon Technologies Austria AG
- Oliver Häberlen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-electron-mobility transistor having a buried field plate
- Patent number 11,114,554
- Issue date Sep 7, 2021
- Infineon Technologies Austria AG
- Gerhard Prechtl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 10,600,710
- Issue date Mar 24, 2020
- Infineon Technologies Austria AG
- Gerhard Prechtl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor devices by bonding a semicond...
- Patent number 10,431,504
- Issue date Oct 1, 2019
- Infineon Technologies Austria AG
- Wolfgang Lehnert
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming substrate structures and semiconductor components
- Patent number 10,388,736
- Issue date Aug 20, 2019
- Infineon Technologies Austria AG
- Gerhard Prechtl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a vertical potential short in a periphery region...
- Patent number 10,304,923
- Issue date May 28, 2019
- Infineon Technologies Austria AG
- Clemens Ostermaier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical potential short in the periphery region of a III-nitride s...
- Patent number 10,038,051
- Issue date Jul 31, 2018
- Infineon Technologies Austria AG
- Clemens Ostermaier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III-nitride-based enhancement mode transistor having a multi-...
- Patent number 9,837,520
- Issue date Dec 5, 2017
- Infineon Technologies Austria AG
- Clemens Ostermaier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Substrate structure, semiconductor component and method
- Patent number 9,768,258
- Issue date Sep 19, 2017
- Infineon Technologies Austria AG
- Gerhard Prechtl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contact structures for compound semiconductor devices
- Patent number 9,666,705
- Issue date May 30, 2017
- Infineon Technologies Austria AG
- Gerhard Prechtl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing an electronic component
- Patent number 9,620,472
- Issue date Apr 11, 2017
- Infineon Technologies Austria AG
- Ralf Otremba
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electronic device
- Patent number 9,590,048
- Issue date Mar 7, 2017
- Infineon Technologies Austria AG
- Gerhard Prechtl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electronic component and method
- Patent number 9,443,787
- Issue date Sep 13, 2016
- Infineon Technologies Austria AG
- Ralf Otremba
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Compound semiconductor transistor with self aligned gate
- Patent number 9,443,941
- Issue date Sep 13, 2016
- Infineon Technologies Austria AG
- Oliver Häberlen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Normally-off high electron mobility transistors
- Patent number 9,373,688
- Issue date Jun 21, 2016
- Infineon Technologies Austria AG
- Gilberto Curatola
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
HEMT with compensation structure
- Patent number 9,356,130
- Issue date May 31, 2016
- Infineon Technologies Austria AG
- Gilberto Curatola
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III-nitride-based enhancement mode transistor
- Patent number 9,337,279
- Issue date May 10, 2016
- Infineon Technologies Austria AG
- Clemens Ostermaier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-voltage cascaded diode with HEMT and monolithically integrated...
- Patent number 9,142,550
- Issue date Sep 22, 2015
- Infineon Technologies Austria AG
- Gerhard Prechtl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High breakdown voltage III-nitride device
- Patent number 9,076,763
- Issue date Jul 7, 2015
- Infineon Technologies Austria AG
- Clemens Ostermaier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III-nitride-based enhancement mode transistor
- Patent number 9,048,303
- Issue date Jun 2, 2015
- Infineon Technologies Austria AG
- Clemens Ostermaier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Protection device for normally-on and normally-off high electron mo...
- Patent number 9,041,066
- Issue date May 26, 2015
- Infineon Technologies Austria AG
- Walter Rieger
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Grant
Compound semiconductor device with buried field plate
- Patent number 9,024,356
- Issue date May 5, 2015
- Infineon Technologies Austria AG
- Gilberto Curatola
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated Schottky diode for HEMTs
- Patent number 8,872,235
- Issue date Oct 28, 2014
- Infineon Technologies Austria AG
- Gerhard Prechtl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Normally-off compound semiconductor tunnel transistor with a plural...
- Patent number 8,835,932
- Issue date Sep 16, 2014
- Infineon Technologies Austria AG
- Gilberto Curatola
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
HEMT with integrated low forward bias diode
- Patent number 8,674,372
- Issue date Mar 18, 2014
- Infineon Technologies Austria AG
- Gilberto Curatola
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Normally-off compound semiconductor tunnel transistor
- Patent number 8,586,993
- Issue date Nov 19, 2013
- Infineon Technologies Austria AG
- Gilberto Curatola
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Monolithically integrated HEMT and current protection device
- Patent number 8,587,033
- Issue date Nov 19, 2013
- Infineon Technologies Austria AG
- Walter Rieger
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Grant
III-V semiconductor devices with buried contacts
- Patent number 8,569,799
- Issue date Oct 29, 2013
- Infineon Technologies Austria AG
- Gilberto Curatola
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power transistor arrangement and method for fabricating it
- Patent number 7,250,343
- Issue date Jul 31, 2007
- Infineon Technologies AG
- Manfred Kotek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power transistor arrangement and method for fabricating it
- Patent number 7,186,618
- Issue date Mar 6, 2007
- Infineon Technologies AG
- Martin Pölzl
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
ELECTRONIC CIRCUIT WITH A TRANSISTOR DEVICE AND A CLAMP CIRCUIT AND...
- Publication number 20240072785
- Publication date Feb 29, 2024
- Infineon Technologies Austria AG
- Adrian Finney
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING A SEMICONDUCTOR DEVICE
- Publication number 20240030217
- Publication date Jan 25, 2024
- Infineon Technologies Austria AG
- Gerhard Prechtl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING A LATERAL TRANSISTOR DEVICE AND AN INVE...
- Publication number 20230317804
- Publication date Oct 5, 2023
- Infineon Technologies Austria AG
- Oliver Häberlen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device
- Publication number 20190096779
- Publication date Mar 28, 2019
- Gerhard Prechtl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Forming a Vertical Potential Short in a Periphery Region...
- Publication number 20180331175
- Publication date Nov 15, 2018
- Infineon Technologies Austria AG
- Clemens Ostermaier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of Forming Substrate Structures and Semiconductor Components
- Publication number 20180047813
- Publication date Feb 15, 2018
- Infineon Technologies Austria AG
- Gerhard Prechtl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High-Electron-Mobility Transistor Having a Buried Field Plate
- Publication number 20170365702
- Publication date Dec 21, 2017
- Infineon Technologies Austria AG
- Gerhard Prechtl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUBSTRATE STRUCTURE, SEMICONDUCTOR COMPONENT AND METHOD
- Publication number 20170271454
- Publication date Sep 21, 2017
- Infineon Technologies Austria AG
- Gerhard Prechtl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Vertical Potential Short in the Periphery Region of a III-Nitride S...
- Publication number 20170243936
- Publication date Aug 24, 2017
- Infineon Technologies Austria AG
- Clemens Ostermaier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-Nitride Bidirectional Device
- Publication number 20170125562
- Publication date May 4, 2017
- Infineon Technologies Austria AG
- Gerhard Prechtl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Manufacturing an Electronic Component
- Publication number 20160372439
- Publication date Dec 22, 2016
- Infineon Technologies Austria AG
- Ralf Otremba
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Manufacturing Semiconductor Devices by Bonding a Semicond...
- Publication number 20160260699
- Publication date Sep 8, 2016
- Infineon Technologies Austria AG
- Wolfgang Lehnert
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Group III-Nitride-Based Enhancement Mode Transistor Having a Multi-...
- Publication number 20160247905
- Publication date Aug 25, 2016
- Infineon Technologies Austria AG
- Clemens Ostermaier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-Nitride Device Having a Buried Insulating Region
- Publication number 20160155834
- Publication date Jun 2, 2016
- Infineon Technologies Austria AG
- Clemens Ostermaier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Group III-Nitride-Based Enhancement Mode Transistor
- Publication number 20150249134
- Publication date Sep 3, 2015
- Infineon Technologies Austria AG
- Clemens Ostermaier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Electronic Device
- Publication number 20150115326
- Publication date Apr 30, 2015
- Infineon Technologies Austria AG
- Gerhard Prechtl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Electronic Component and Method
- Publication number 20150041984
- Publication date Feb 12, 2015
- Infineon Technologies Austria AG
- Ralf Otremba
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High-Voltage Cascaded Diode with HEMT and Monolithically Integrated...
- Publication number 20140367700
- Publication date Dec 18, 2014
- Gerhard Prechtl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HEMT with Compensation Structure
- Publication number 20140124791
- Publication date May 8, 2014
- Infineon Technologies Austria AG
- Gilberto Curatola
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High Breakdown Voltage III-Nitride Device
- Publication number 20140042448
- Publication date Feb 13, 2014
- Infineon Technologies Austria AG
- Clemens Ostermaier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Protection Device for Normally-On and Normally-Off High Electron Mo...
- Publication number 20140035003
- Publication date Feb 6, 2014
- Infineon Technologies Austria AG
- Walter Rieger
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Application
Normally-Off Compound Semiconductor Tunnel Transistor with a Plural...
- Publication number 20140034962
- Publication date Feb 6, 2014
- Gilberto Curatola
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Compound Semiconductor Transistor with Self Aligned Gate
- Publication number 20130320350
- Publication date Dec 5, 2013
- Infineon Technologies Austria AG
- Oliver Häberlen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MONOLITHICALLY INTEGRATED HEMT AND CURRENT PROTECTION DEVICE
- Publication number 20130320952
- Publication date Dec 5, 2013
- Infineon Technologies Austria AG
- Walter Rieger
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Application
Contact Structures for Compound Semiconductor Devices
- Publication number 20130299842
- Publication date Nov 14, 2013
- Infineon Technologies Austria AG
- Gerhard Prechtl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NORMALLY-OFF COMPOUND SEMICONDUCTOR TUNNEL TRANSISTOR
- Publication number 20130221366
- Publication date Aug 29, 2013
- Infineon Technologies Austria AG
- Gilberto Curatola
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integrated Schottky Diode for HEMTs
- Publication number 20130221363
- Publication date Aug 29, 2013
- Infineon Technologies Austria AG
- Gerhard Prechtl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Compound Semiconductor Device with Buried Field Plate
- Publication number 20130153967
- Publication date Jun 20, 2013
- Infineon Technologies Austria AG
- Gilberto Curatola
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-V Semiconductor Devices with Buried Contacts
- Publication number 20130153919
- Publication date Jun 20, 2013
- Infineon Technologies Austria AG
- Gilberto Curatola
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HEMT WITH INTEGRATED LOW FORWARD BIAS DIODE
- Publication number 20130043484
- Publication date Feb 21, 2013
- Infineon Technologies Austria AG
- Gilberto Curatola
- H01 - BASIC ELECTRIC ELEMENTS

Oliver Häberlen

Person

Patents Grantslast 30 patents

Semiconductor device having a lateral transistor device and an inve...

High-electron-mobility transistor having a buried field plate

Semiconductor device

Method of manufacturing semiconductor devices by bonding a semicond...

Methods of forming substrate structures and semiconductor components

Method of forming a vertical potential short in a periphery region...

Vertical potential short in the periphery region of a III-nitride s...

Group III-nitride-based enhancement mode transistor having a multi-...

Substrate structure, semiconductor component and method

Contact structures for compound semiconductor devices

Method of manufacturing an electronic component

Electronic device

Electronic component and method

Compound semiconductor transistor with self aligned gate

Normally-off high electron mobility transistors

HEMT with compensation structure

Group III-nitride-based enhancement mode transistor

High-voltage cascaded diode with HEMT and monolithically integrated...

High breakdown voltage III-nitride device

Group III-nitride-based enhancement mode transistor

Protection device for normally-on and normally-off high electron mo...

Compound semiconductor device with buried field plate

Integrated Schottky diode for HEMTs

Normally-off compound semiconductor tunnel transistor with a plural...

HEMT with integrated low forward bias diode

Normally-off compound semiconductor tunnel transistor

Monolithically integrated HEMT and current protection device

III-V semiconductor devices with buried contacts

Power transistor arrangement and method for fabricating it

Power transistor arrangement and method for fabricating it

Patents Applicationslast 30 patents

ELECTRONIC CIRCUIT WITH A TRANSISTOR DEVICE AND A CLAMP CIRCUIT AND...

SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING A SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE HAVING A LATERAL TRANSISTOR DEVICE AND AN INVE...

Semiconductor Device

Method of Forming a Vertical Potential Short in a Periphery Region...

Methods of Forming Substrate Structures and Semiconductor Components

High-Electron-Mobility Transistor Having a Buried Field Plate

SUBSTRATE STRUCTURE, SEMICONDUCTOR COMPONENT AND METHOD

Vertical Potential Short in the Periphery Region of a III-Nitride S...

III-Nitride Bidirectional Device

Method of Manufacturing an Electronic Component

Method of Manufacturing Semiconductor Devices by Bonding a Semicond...

Group III-Nitride-Based Enhancement Mode Transistor Having a Multi-...

III-Nitride Device Having a Buried Insulating Region

Group III-Nitride-Based Enhancement Mode Transistor

Electronic Device

Electronic Component and Method

High-Voltage Cascaded Diode with HEMT and Monolithically Integrated...

HEMT with Compensation Structure

High Breakdown Voltage III-Nitride Device

Protection Device for Normally-On and Normally-Off High Electron Mo...

Normally-Off Compound Semiconductor Tunnel Transistor with a Plural...

Compound Semiconductor Transistor with Self Aligned Gate

MONOLITHICALLY INTEGRATED HEMT AND CURRENT PROTECTION DEVICE

Contact Structures for Compound Semiconductor Devices

NORMALLY-OFF COMPOUND SEMICONDUCTOR TUNNEL TRANSISTOR

Integrated Schottky Diode for HEMTs

Compound Semiconductor Device with Buried Field Plate

III-V Semiconductor Devices with Buried Contacts

HEMT WITH INTEGRATED LOW FORWARD BIAS DIODE