Omair SAADAT

Person

Beaverton, OR, US

People

Patents Grantslast 30 patents

Information Patent Grant
Fabrication of gate-all-around integrated circuit structures having...
- Patent number 12,113,068
- Issue date Oct 8, 2024
- Intel Corporation
- Dan S. Lavric
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
FABRICATION OF GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING...
- Publication number 20240429238
- Publication date Dec 26, 2024
- Intel Corporation
- Dan S. LAVRIC
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL GATE FABRICATION FOR NANORIBBON-BASED TRANSISTORS
- Publication number 20240290788
- Publication date Aug 29, 2024
- Intel Corporation
- Guowei Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE END CAP AND BOUNDARY PLACEMENT IN TRANSISTOR STRUCTURES FOR N-...
- Publication number 20230071699
- Publication date Mar 9, 2023
- Intel Corporation
- Andrew Smith
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW GERMANIUM, HIGH BORON SILICON RICH CAPPING LAYER FOR PMOS CONTA...
- Publication number 20220416050
- Publication date Dec 29, 2022
- Intel Corporation
- Debaleena NANDI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CO-DEPOSITION OF TITANIUM AND SILICON FOR IMPROVED SILICON GERMANIU...
- Publication number 20220416032
- Publication date Dec 29, 2022
- Intel Corporation
- Debaleena Nandi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FABRICATION OF GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING...
- Publication number 20220093598
- Publication date Mar 24, 2022
- Intel Corporation
- Dan S. LAVRIC
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FABRICATION OF GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING...
- Publication number 20220093648
- Publication date Mar 24, 2022
- Intel Corporation
- Dan S. LAVRIC
- H01 - BASIC ELECTRIC ELEMENTS

Omair SAADAT

Person

Patents Grantslast 30 patents

Fabrication of gate-all-around integrated circuit structures having...

Patents Applicationslast 30 patents

FABRICATION OF GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING...

METAL GATE FABRICATION FOR NANORIBBON-BASED TRANSISTORS

GATE END CAP AND BOUNDARY PLACEMENT IN TRANSISTOR STRUCTURES FOR N-...

LOW GERMANIUM, HIGH BORON SILICON RICH CAPPING LAYER FOR PMOS CONTA...

CO-DEPOSITION OF TITANIUM AND SILICON FOR IMPROVED SILICON GERMANIU...

FABRICATION OF GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING...

FABRICATION OF GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING...