ORB ACTON

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Portland, OR, US

People

Patents Grantslast 30 patents

Information Patent Grant
Gate-all-around integrated circuit structures having uniform thresh...
- Patent number 12,310,060
- Issue date May 20, 2025
- Intel Corporation
- Dan S. Lavric
Information Patent Grant
Fabrication of gate-all-around integrated circuit structures having...
- Patent number 12,051,698
- Issue date Jul 30, 2024
- Intel Corporation
- Daniel G. Ouellette
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Leave-behind protective layer having secondary purpose
- Patent number 11,996,408
- Issue date May 28, 2024
- Intel Corporation
- Aaron D. Lilak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicide structure of an integrated transistor device and method of...
- Patent number 11,476,334
- Issue date Oct 18, 2022
- Intel Corporation
- Orb Acton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Leave-behind protective layer having secondary purpose
- Patent number 11,348,916
- Issue date May 31, 2022
- Intel Corporation
- Aaron D. Lilak
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
GATE TERMINAL METHODS AND STRUCTURES
- Publication number 20250210356
- Publication date Jun 26, 2025
- Zafrullah JAGOO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-THRESHOLD SCHEME USING DUAL DIPOLE PATTERNING IN COMPLEMENTAR...
- Publication number 20250113598
- Publication date Apr 3, 2025
- Intel Corporation
- Dan Lavric
Information Patent Application
FABRICATION OF GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING...
- Publication number 20240332394
- Publication date Oct 3, 2024
- Intel Corporation
- David N. GOLDSTEIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL GATE FABRICATION FOR NANORIBBON-BASED TRANSISTORS
- Publication number 20240290788
- Publication date Aug 29, 2024
- Intel Corporation
- Guowei Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FABRICATION OF GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING...
- Publication number 20230420531
- Publication date Dec 28, 2023
- Intel Corporation
- Dan S. LAVRIC
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CMOS ARCHITECTURE WITH THERMALLY STABLE SILICIDE GATE WORKFUNCTION...
- Publication number 20230090092
- Publication date Mar 23, 2023
- Aaron D. Lilak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING UNIFORM THRESH...
- Publication number 20220416039
- Publication date Dec 29, 2022
- Intel Corporation
- Dan S. LAVRIC
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LEAVE-BEHIND PROTECTIVE LAYER HAVING SECONDARY PURPOSE
- Publication number 20220246608
- Publication date Aug 4, 2022
- Intel Corporation
- AARON D. LILAK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIPOLE THRESHOLD VOLTAGE TUNING FOR HIGH VOLTAGE TRANSISTOR STACKS
- Publication number 20220199472
- Publication date Jun 23, 2022
- Intel Corporation
- Robin Chao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FABRICATION OF GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING...
- Publication number 20220093597
- Publication date Mar 24, 2022
- Intel Corporation
- Daniel G. OUELLETTE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICIDE STRUCTURE OF AN INTEGRATED TRANSISTOR DEVICE AND METHOD OF...
- Publication number 20200343343
- Publication date Oct 29, 2020
- Intel Corporation
- Orb Acton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LEAVE-BEHIND PROTECTIVE LAYER HAVING SECONDARY PURPOSE
- Publication number 20200006330
- Publication date Jan 2, 2020
- Intel Corporation
- AARON D. LILAK
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Gate-all-around integrated circuit structures having uniform thresh...

Fabrication of gate-all-around integrated circuit structures having...

Leave-behind protective layer having secondary purpose

Silicide structure of an integrated transistor device and method of...

Leave-behind protective layer having secondary purpose

Patents Applicationslast 30 patents

GATE TERMINAL METHODS AND STRUCTURES

MULTI-THRESHOLD SCHEME USING DUAL DIPOLE PATTERNING IN COMPLEMENTAR...

FABRICATION OF GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING...

METAL GATE FABRICATION FOR NANORIBBON-BASED TRANSISTORS

FABRICATION OF GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING...

CMOS ARCHITECTURE WITH THERMALLY STABLE SILICIDE GATE WORKFUNCTION...

GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING UNIFORM THRESH...

LEAVE-BEHIND PROTECTIVE LAYER HAVING SECONDARY PURPOSE

DIPOLE THRESHOLD VOLTAGE TUNING FOR HIGH VOLTAGE TRANSISTOR STACKS

FABRICATION OF GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING...

SILICIDE STRUCTURE OF AN INTEGRATED TRANSISTOR DEVICE AND METHOD OF...

LEAVE-BEHIND PROTECTIVE LAYER HAVING SECONDARY PURPOSE