Membership
Tour
Register
Log in
Osamu Hataishi
Follow
Person
Kawasaki, JP
People
Overview
Industries
Organizations
People
Information
Impact
Patents Grants
last 30 patents
Information
Patent Grant
Semiconductor device with shallow n-type region with arsenic or ant...
Patent number
4,875,085
Issue date
Oct 17, 1989
Fujitsu Limited
Katsunobu Ueno
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method of forming shallow n-type region with arsenic or antimony an...
Patent number
4,629,520
Issue date
Dec 16, 1986
Fujitsu Limited
Katsunobu Ueno
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Process for fabricating a semiconductor on insulator semiconductor...
Patent number
4,584,025
Issue date
Apr 22, 1986
Fujitsu Limited
Matsuo Takaoka
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method for fabricating a SOI type semiconductor device
Patent number
4,575,925
Issue date
Mar 18, 1986
Fujitsu Limited
Kazuhiro Kanbara
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Semiconductor device and method for its preparation
Patent number
RE31937
Issue date
Jul 2, 1985
Fujitsu Ltd.
Yoshinobu Momma
357 -
Information
Patent Grant
Method of producing a semiconductor device
Patent number
RE31652
Issue date
Aug 28, 1984
Fujitsu Limited
Osamu Hataishi
029 - Metal working
Information
Patent Grant
Method of producing a semiconductor device
Patent number
4,376,664
Issue date
Mar 15, 1983
Fujitsu Limited
Osamu Hataishi
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method of producing a semiconductor device
Patent number
4,343,080
Issue date
Aug 10, 1982
Fijitsu Limited
Osamu Hataishi
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Semiconductor device and method for its preparation
Patent number
4,231,057
Issue date
Oct 28, 1980
Fujitsu Limited
Yoshinobu Momma
H01 - BASIC ELECTRIC ELEMENTS