Owen Y. Loh

Person

Portland, OR, US

People

Patents Grantslast 30 patents

Information Patent Grant
MFM capacitor and process for forming such
- Patent number 11,901,400
- Issue date Feb 13, 2024
- Intel Corporation
- Nazila Haratipour
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MFM capacitor with multilayered oxides and metals and processes for...
- Patent number 11,769,789
- Issue date Sep 26, 2023
- Intel Corporation
- Nazila Haratipour
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multilayer high-k gate dielectric for a high performance logic tran...
- Patent number 11,742,407
- Issue date Aug 29, 2023
- Intel Corporation
- Seung Hoon Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor device with (anti)ferroelectric spacer structures
- Patent number 11,640,984
- Issue date May 2, 2023
- Intel Corporation
- Jack Kavalieros
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor device with variously conformal gate dielectric layers
- Patent number 11,616,130
- Issue date Mar 28, 2023
- Intel Corporation
- Seung Hoon Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Passivation of transistor channel region interfaces
- Patent number 10,978,568
- Issue date Apr 13, 2021
- Intel Corporation
- Glenn A. Glass
- B82 - NANO-TECHNOLOGY

Patents Applicationslast 30 patents

Information Patent Application
FERROELECTRIC CAPACITOR WITH INSULATING THIN FILM
- Publication number 20250006434
- Publication date Jan 2, 2025
- Intel Corporation
- Chia-Ching Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTILAYER HIGH-K GATE DIELECTRIC FOR A HIGH PERFORMANCE LOGIC TRAN...
- Publication number 20210167182
- Publication date Jun 3, 2021
- Intel Corporation
- Seung Hoon SUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MFM CAPACITOR WITH MULTILAYERED OXIDES AND METALS AND PROCESSES FOR...
- Publication number 20200312949
- Publication date Oct 1, 2020
- Intel Corporation
- Nazila HARATIPOUR
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR DEVICE WITH VARIOUSLY CONFORMAL GATE DIELECTRIC LAYERS
- Publication number 20200312976
- Publication date Oct 1, 2020
- Intel Corporation
- Seung Hoon Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MFM CAPACITOR AND PROCESS FOR FORMING SUCH
- Publication number 20200312950
- Publication date Oct 1, 2020
- Intel Corporation
- Nazila HARATIPOUR
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR DEVICE WITH (ANTI)FERROELECTRIC SPACER STRUCTURES
- Publication number 20200312978
- Publication date Oct 1, 2020
- Intel Corporation
- Jack KAVALIEROS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CAPACITOR WITH EPITAXIAL STRAIN ENGINEERING
- Publication number 20200286685
- Publication date Sep 10, 2020
- Intel Corporation
- Chia-Ching Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SINGLE TRANSISTOR WITH STRAINED AND DE-POLARIZING ANTI-FERROELECTRI...
- Publication number 20200287017
- Publication date Sep 10, 2020
- Intel Corporation
- Sou-Chi CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FERROELECTRIC CAPACITOR WITH INSULATING THIN FILM
- Publication number 20200286686
- Publication date Sep 10, 2020
- Intel Corporation
- Chia-Ching Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PASSIVATION OF TRANSISTOR CHANNEL REGION INTERFACES
- Publication number 20180248015
- Publication date Aug 30, 2018
- Intel Corporation
- GLENN A. GLASS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Electrodes to improve reliability of nanoelectromechanical systems
- Publication number 20110317325
- Publication date Dec 29, 2011
- Northwestern University
- Horacio D. Espinosa
- H01 - BASIC ELECTRIC ELEMENTS

Owen Y. Loh

Person

Patents Grantslast 30 patents

MFM capacitor and process for forming such

MFM capacitor with multilayered oxides and metals and processes for...

Multilayer high-k gate dielectric for a high performance logic tran...

Transistor device with (anti)ferroelectric spacer structures

Transistor device with variously conformal gate dielectric layers

Passivation of transistor channel region interfaces

Patents Applicationslast 30 patents

FERROELECTRIC CAPACITOR WITH INSULATING THIN FILM

MULTILAYER HIGH-K GATE DIELECTRIC FOR A HIGH PERFORMANCE LOGIC TRAN...

MFM CAPACITOR WITH MULTILAYERED OXIDES AND METALS AND PROCESSES FOR...

TRANSISTOR DEVICE WITH VARIOUSLY CONFORMAL GATE DIELECTRIC LAYERS

MFM CAPACITOR AND PROCESS FOR FORMING SUCH

TRANSISTOR DEVICE WITH (ANTI)FERROELECTRIC SPACER STRUCTURES

CAPACITOR WITH EPITAXIAL STRAIN ENGINEERING

SINGLE TRANSISTOR WITH STRAINED AND DE-POLARIZING ANTI-FERROELECTRI...

FERROELECTRIC CAPACITOR WITH INSULATING THIN FILM

PASSIVATION OF TRANSISTOR CHANNEL REGION INTERFACES

Electrodes to improve reliability of nanoelectromechanical systems