Ozgur Aktas

Person

Pleasanton, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Method and system for diffusing magnesium in gallium nitride materi...
- Patent number 11,881,404
- Issue date Jan 23, 2024
- QROMIS, Inc.
- Ozgur Aktas
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit devices with an engineered substrate
- Patent number 11,735,460
- Issue date Aug 22, 2023
- QROMIS, Inc.
- Vladimir Odnoblyudov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium nitride epitaxial structures for power devices
- Patent number 11,699,750
- Issue date Jul 11, 2023
- QROMIS, Inc.
- Vladimir Odnoblyudov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
System for integration of elemental and compound semiconductors on...
- Patent number 11,328,927
- Issue date May 10, 2022
- QROMIS, Inc.
- Vladimir Odnoblyudov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
RF device integrated on an engineered substrate
- Patent number 11,271,101
- Issue date Mar 8, 2022
- QROMIS, Inc.
- Vladimir Odnoblyudov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Systems and method for integrated devices on an engineered substrate
- Patent number 11,164,743
- Issue date Nov 2, 2021
- QROMIS, Inc.
- Vladimir Odnoblyudov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
RF device integrated on an engineered substrate
- Patent number 11,121,244
- Issue date Sep 14, 2021
- QROMIS, Inc.
- Vladimir Odnoblyudov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of manufacturing vertical semiconductor diodes using an eng...
- Patent number 11,107,720
- Issue date Aug 31, 2021
- QROMIS, Inc.
- Vladimir Odnoblyudov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium-nitride based devices implementing an engineered substrate...
- Patent number 10,930,576
- Issue date Feb 23, 2021
- QROMIS, Inc.
- Vladimir Odnoblyudov
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Grant
Gallium nitride epitaxial structures for power devices
- Patent number 10,833,186
- Issue date Nov 10, 2020
- QROMIS, Inc.
- Vladimir Odnoblyudov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and system for forming doped regions by diffusion gallium ni...
- Patent number 10,763,110
- Issue date Sep 1, 2020
- QROMIS, Inc.
- Ozgur Aktas
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Aluminum nitride based Silicon-on-Insulator substrate structure
- Patent number 10,755,986
- Issue date Aug 25, 2020
- QROMIS, Inc.
- Ozgur Aktas
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power and RF devices implemented using an engineered substrate stru...
- Patent number 10,734,303
- Issue date Aug 4, 2020
- QROMIS, Inc.
- Vladimir Odnoblyudov
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Grant
Lateral high electron mobility transistor with integrated clamp diode
- Patent number 10,734,486
- Issue date Aug 4, 2020
- QROMIS, Inc.
- Vladimir Odnoblyudov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
RF device integrated on an engineered substrate
- Patent number 10,622,468
- Issue date Apr 14, 2020
- QROMIS, Inc.
- Vladimir Odnoblyudov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for integrated devices on an engineered substrate
- Patent number 10,573,516
- Issue date Feb 25, 2020
- QROMIS, Inc.
- Vladimir Odnoblyudov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming a vertical semiconductor diode using an engineer...
- Patent number 10,535,547
- Issue date Jan 14, 2020
- QROMIS, Inc.
- Vladimir Odnoblyudov
- C30 - CRYSTAL GROWTH
Information Patent Grant
Electronic power devices integrated with an engineered substrate
- Patent number 10,529,613
- Issue date Jan 7, 2020
- QROMIS, Inc.
- Vladimir Odnoblyudov
- C30 - CRYSTAL GROWTH
Information Patent Grant
Lateral high electron mobility transistor with integrated clamp diode
- Patent number 10,490,636
- Issue date Nov 26, 2019
- QROMIS, Inc.
- Vladimir Odnoblyudov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for integration of elemental and compound semiconductors on...
- Patent number 10,438,792
- Issue date Oct 8, 2019
- QROMIS, Inc.
- Vladimir Odnoblyudov
- C30 - CRYSTAL GROWTH
Information Patent Grant
Vertical gallium nitride Schottky diode
- Patent number 10,411,108
- Issue date Sep 10, 2019
- QROMIS, Inc.
- Vladimir Odnoblyudov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electronic power devices integrated with an engineered substrate
- Patent number 10,395,965
- Issue date Aug 27, 2019
- QROMIS, Inc.
- Vladimir Odnoblyudov
- C30 - CRYSTAL GROWTH
Information Patent Grant
Gallium nitride epitaxial structures for power devices
- Patent number 10,355,120
- Issue date Jul 16, 2019
- QROMIS, Inc.
- Vladimir Odnoblyudov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral gallium nitride JFET with controlled doping profile
- Patent number 10,312,378
- Issue date Jun 4, 2019
- QROMIS, Inc.
- Vladimir Odnoblyudov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and system for vertical power devices
- Patent number 10,204,778
- Issue date Feb 12, 2019
- QROMIS, Inc.
- Vladimir Odnoblyudov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical semiconductor diode manufactured with an engineered substrate
- Patent number 10,181,419
- Issue date Jan 15, 2019
- QROMIS, Inc.
- Vladimir Odnoblyudov
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of fabricating a merged P-N junction and schottky diode with...
- Patent number 9,525,039
- Issue date Dec 20, 2016
- Avogy, Inc.
- Isik C. Kizilyalli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a merged P-N junction and schottky diode with...
- Patent number 9,159,799
- Issue date Oct 13, 2015
- Avogy, Inc.
- Isik C. Kizilyalli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium nitride field effect transistor with buried field plate pro...
- Patent number 9,123,799
- Issue date Sep 1, 2015
- Avogy, Inc.
- Ozgur Aktas
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
GALLIUM NITRIDE EPITAXIAL STRUCTURES FOR POWER DEVICES
- Publication number 20230261101
- Publication date Aug 17, 2023
- QROMIS, Inc.
- Vladimir Odnoblyudov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS AND SYSTEMS FOR FABRICATION OF MMIC AND RF DEVICES ON ENGIN...
- Publication number 20220115340
- Publication date Apr 14, 2022
- QROMIS, Inc.
- Ozgur Aktas
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICES WITH AN ENGINEERED SUBSTRATE
- Publication number 20210358795
- Publication date Nov 18, 2021
- QROMIS, Inc.
- Vladimir Odnoblyudov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND SYSTEM FOR DIFFUSING MAGNESIUM IN GALLIUM NITRIDE MATERI...
- Publication number 20210249269
- Publication date Aug 12, 2021
- QROMIS, Inc.
- Ozgur Aktas
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE EPITAXIAL STRUCTURES FOR POWER DEVICES
- Publication number 20210057563
- Publication date Feb 25, 2021
- QROMIS, Inc.
- Vladimir Odnoblyudov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM-NITRIDE BASED DEVICES IMPLEMENTING AN ENGINEERED SUBSTRATE...
- Publication number 20200335418
- Publication date Oct 22, 2020
- QROMIS, Inc.
- Vladimir Odnoblyudov
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Application
RF DEVICE INTEGRATED ON AN ENGINEERED SUBSTRATE
- Publication number 20200212213
- Publication date Jul 2, 2020
- QROMIS, Inc.
- Vladimir Odnoblyudov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RF DEVICE INTEGRATED ON AN ENGINEERED SUBSTRATE
- Publication number 20200212214
- Publication date Jul 2, 2020
- QROMIS, Inc.
- Vladimir Odnoblyudov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SYSTEMS AND METHOD FOR INTEGRATED DEVICES ON AN ENGINEERED SUBSTRATE
- Publication number 20200152456
- Publication date May 14, 2020
- QROMIS, Inc.
- Vladimir Odnoblyudov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF MANUFACTURING VERTICAL SEMICONDUCTOR DIODES USING AN ENG...
- Publication number 20200111698
- Publication date Apr 9, 2020
- QROMIS, Inc.
- Vladimir Odnoblyudov
- C30 - CRYSTAL GROWTH
Information Patent Application
LATERAL HIGH ELECTRON MOBILITY TRANSISTOR WITH INTEGRATED CLAMP DIODE
- Publication number 20200044033
- Publication date Feb 6, 2020
- QROMIS, Inc.
- Vladimir Odnoblyudov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE EPITAXIAL STRUCTURES FOR POWER DEVICES
- Publication number 20190371929
- Publication date Dec 5, 2019
- QROMIS, Inc.
- Vladimir Odnoblyudov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SYSTEM FOR INTEGRATION OF ELEMENTAL AND COMPOUND SEMICONDUCTORS ON...
- Publication number 20190348275
- Publication date Nov 14, 2019
- QROMIS, Inc.
- Vladimir Odnoblyudov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL GALLIUM NITRIDE SCHOTTKY DIODE
- Publication number 20190334015
- Publication date Oct 31, 2019
- QROMIS, Inc.
- Vladimir Odnoblyudov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRONIC POWER DEVICES INTEGRATED WITH AN ENGINEERED SUBSTRATE
- Publication number 20190326148
- Publication date Oct 24, 2019
- QROMIS, Inc.
- Vladimir Odnoblyudov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND SYSTEM FOR FORMING DOPED REGIONS BY DIFFUSION GALLIUM NI...
- Publication number 20190252186
- Publication date Aug 15, 2019
- QROMIS, Inc.
- Ozgur Aktas
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SYSTEMS AND METHOD FOR INTEGRATED DEVICES ON AN ENGINEERED SUBSTRATE
- Publication number 20190172709
- Publication date Jun 6, 2019
- QROMIS, Inc.
- Vladimir Odnoblyudov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER AND RF DEVICES IMPLEMENTED USING AN ENGINEERED SUBSTRATE STRU...
- Publication number 20190139859
- Publication date May 9, 2019
- QROMIS, Inc.
- Vladimir Odnoblyudov
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Application
VERTICAL SEMICONDUCTOR DIODE MANUFACTURED WITH AN ENGINEERED SUBSTRATE
- Publication number 20190122916
- Publication date Apr 25, 2019
- QROMIS, Inc.
- Vladimir Odnoblyudov
- C30 - CRYSTAL GROWTH
Information Patent Application
VERTICAL GALLIUM NITRIDE SCHOTTKY DIODE
- Publication number 20180286964
- Publication date Oct 4, 2018
- QROMIS, Inc.
- Vladimir Odnoblyudov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RF DEVICE INTEGRATED ON AN ENGINEERED SUBSTRATE
- Publication number 20180240902
- Publication date Aug 23, 2018
- QROMIS, Inc.
- Vladimir Odnoblyudov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERAL GALLIUM NITRIDE JFET WITH CONTROLLED DOPING PROFILE
- Publication number 20180219106
- Publication date Aug 2, 2018
- QROMIS, Inc.
- Vladimir Odnoblyudov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE EPITAXIAL STRUCTURES FOR POWER DEVICES
- Publication number 20180204941
- Publication date Jul 19, 2018
- QROMIS, Inc.
- Vladimir Odnoblyudov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND SYSTEM FOR VERTICAL POWER DEVICES
- Publication number 20180182620
- Publication date Jun 28, 2018
- QROMIS, Inc.
- Vladimir Odnoblyudov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERAL HIGH ELECTRON MOBILITY TRANSISTOR WITH INTEGRATED CLAMP DIODE
- Publication number 20180158917
- Publication date Jun 7, 2018
- QROMIS, Inc.
- Vladimir Odnoblyudov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND SYSTEM FOR INTEGRATION OF ELEMENTAL AND COMPOUND SEMICON...
- Publication number 20180114693
- Publication date Apr 26, 2018
- QROMIS, Inc.
- Vladimir Odnoblyudov
- C30 - CRYSTAL GROWTH
Information Patent Application
VERTICAL SEMICONDUCTOR DIODE MANUFACTURED WITH AN ENGINEERED SUBSTRATE
- Publication number 20180061630
- Publication date Mar 1, 2018
- Quora Technology, Inc.
- Vladimir Odnoblyudov
- C30 - CRYSTAL GROWTH
Information Patent Application
ELECTRONIC POWER DEVICES INTEGRATED WITH AN ENGINEERED SUBSTRATE
- Publication number 20180061694
- Publication date Mar 1, 2018
- Quora Technology, Inc.
- Vladimir Odnoblyudov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Aluminum Nitride Based Silicon-On-Insulator Substrate Structure
- Publication number 20170288055
- Publication date Oct 5, 2017
- Quora Technology, Inc.
- Ozgur Aktas
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING A MERGED P-N JUNCTION AND SCHOTTKY DIODE WITH...
- Publication number 20160005835
- Publication date Jan 7, 2016
- AVOGY, INC.
- Isik C. Kizilyalli
- H01 - BASIC ELECTRIC ELEMENTS

Ozgur Aktas

Person

Patents Grantslast 30 patents

Method and system for diffusing magnesium in gallium nitride materi...

Integrated circuit devices with an engineered substrate

Gallium nitride epitaxial structures for power devices

System for integration of elemental and compound semiconductors on...

RF device integrated on an engineered substrate

Systems and method for integrated devices on an engineered substrate

RF device integrated on an engineered substrate

Methods of manufacturing vertical semiconductor diodes using an eng...

Gallium-nitride based devices implementing an engineered substrate...

Gallium nitride epitaxial structures for power devices

Method and system for forming doped regions by diffusion gallium ni...

Aluminum nitride based Silicon-on-Insulator substrate structure

Power and RF devices implemented using an engineered substrate stru...

Lateral high electron mobility transistor with integrated clamp diode

RF device integrated on an engineered substrate

Methods for integrated devices on an engineered substrate

Methods of forming a vertical semiconductor diode using an engineer...

Electronic power devices integrated with an engineered substrate

Lateral high electron mobility transistor with integrated clamp diode

Methods for integration of elemental and compound semiconductors on...

Vertical gallium nitride Schottky diode

Electronic power devices integrated with an engineered substrate

Gallium nitride epitaxial structures for power devices

Lateral gallium nitride JFET with controlled doping profile

Method and system for vertical power devices

Vertical semiconductor diode manufactured with an engineered substrate

Method of fabricating a merged P-N junction and schottky diode with...

Method of fabricating a merged P-N junction and schottky diode with...

Gallium nitride field effect transistor with buried field plate pro...

Patents Applicationslast 30 patents

GALLIUM NITRIDE EPITAXIAL STRUCTURES FOR POWER DEVICES

METHODS AND SYSTEMS FOR FABRICATION OF MMIC AND RF DEVICES ON ENGIN...

INTEGRATED CIRCUIT DEVICES WITH AN ENGINEERED SUBSTRATE

METHOD AND SYSTEM FOR DIFFUSING MAGNESIUM IN GALLIUM NITRIDE MATERI...

GALLIUM NITRIDE EPITAXIAL STRUCTURES FOR POWER DEVICES

GALLIUM-NITRIDE BASED DEVICES IMPLEMENTING AN ENGINEERED SUBSTRATE...

RF DEVICE INTEGRATED ON AN ENGINEERED SUBSTRATE

RF DEVICE INTEGRATED ON AN ENGINEERED SUBSTRATE

SYSTEMS AND METHOD FOR INTEGRATED DEVICES ON AN ENGINEERED SUBSTRATE

METHODS OF MANUFACTURING VERTICAL SEMICONDUCTOR DIODES USING AN ENG...

LATERAL HIGH ELECTRON MOBILITY TRANSISTOR WITH INTEGRATED CLAMP DIODE

GALLIUM NITRIDE EPITAXIAL STRUCTURES FOR POWER DEVICES

SYSTEM FOR INTEGRATION OF ELEMENTAL AND COMPOUND SEMICONDUCTORS ON...

VERTICAL GALLIUM NITRIDE SCHOTTKY DIODE

ELECTRONIC POWER DEVICES INTEGRATED WITH AN ENGINEERED SUBSTRATE

METHOD AND SYSTEM FOR FORMING DOPED REGIONS BY DIFFUSION GALLIUM NI...

SYSTEMS AND METHOD FOR INTEGRATED DEVICES ON AN ENGINEERED SUBSTRATE

POWER AND RF DEVICES IMPLEMENTED USING AN ENGINEERED SUBSTRATE STRU...

VERTICAL SEMICONDUCTOR DIODE MANUFACTURED WITH AN ENGINEERED SUBSTRATE

VERTICAL GALLIUM NITRIDE SCHOTTKY DIODE

RF DEVICE INTEGRATED ON AN ENGINEERED SUBSTRATE

LATERAL GALLIUM NITRIDE JFET WITH CONTROLLED DOPING PROFILE

GALLIUM NITRIDE EPITAXIAL STRUCTURES FOR POWER DEVICES

METHOD AND SYSTEM FOR VERTICAL POWER DEVICES

LATERAL HIGH ELECTRON MOBILITY TRANSISTOR WITH INTEGRATED CLAMP DIODE

METHOD AND SYSTEM FOR INTEGRATION OF ELEMENTAL AND COMPOUND SEMICON...

VERTICAL SEMICONDUCTOR DIODE MANUFACTURED WITH AN ENGINEERED SUBSTRATE

ELECTRONIC POWER DEVICES INTEGRATED WITH AN ENGINEERED SUBSTRATE

Aluminum Nitride Based Silicon-On-Insulator Substrate Structure

METHOD OF FABRICATING A MERGED P-N JUNCTION AND SCHOTTKY DIODE WITH...