Padmaraj Sanjeevarao

Person

Austin, TX, US

People

Patents Grantslast 30 patents

Information Patent Grant
Memory with one-time programmable (OTP) cells and reading operation...
- Patent number 11,521,692
- Issue date Dec 6, 2022
- NXP USA, INC.
- Jon Scott Choy
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory with cells having multiple select transistors
- Patent number 11,328,784
- Issue date May 10, 2022
- NXP USA, INC.
- Padmaraj Sanjeevarao
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile memory with virtual ground voltage provided to unselec...
- Patent number 11,289,144
- Issue date Mar 29, 2022
- NXP USA, INC.
- Jon Scott Choy
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile memory with multiplexer transistor regulator circuit
- Patent number 11,250,898
- Issue date Feb 15, 2022
- NXP USA, INC.
- Padmaraj Sanjeevarao
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory with select line voltage control
- Patent number 11,170,849
- Issue date Nov 9, 2021
- NXP USA, INC.
- Jon Scott Choy
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive random access memory (MRAM) with OTP cells
- Patent number 11,049,539
- Issue date Jun 29, 2021
- NXP USA, INC.
- Padmaraj Sanjeevarao
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic disturb diagnostic system for MRAM
- Patent number 10,573,364
- Issue date Feb 25, 2020
- NXP USA, INC.
- Padmaraj Sanjeevarao
- G11 - INFORMATION STORAGE
Information Patent Grant
Decoder
- Patent number 9,396,780
- Issue date Jul 19, 2016
- FREESCALE SEMICONDUCTOR, INC.
- Padmaraj Sanjeevarao
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile memory (NVM) with word line driver/decoder using a cha...
- Patent number 8,913,436
- Issue date Dec 16, 2014
- FREESCALE SEMICONDUCTOR, INC.
- Padmaraj Sanjeevarao
- G11 - INFORMATION STORAGE
Information Patent Grant
Flash memory with bias voltage for word line/row driver
- Patent number 8,737,137
- Issue date May 27, 2014
- FREESCALE SEMICONDUCTOR, INC.
- Jon S. Choy
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device and method using encode values for access error condi...
- Patent number 8,625,365
- Issue date Jan 7, 2014
- FREESCALE SEMICONDUCTOR, INC.
- Padmaraj Sanjeevarao
- G11 - INFORMATION STORAGE
Information Patent Grant
Negative voltage generation
- Patent number 7,733,126
- Issue date Jun 8, 2010
- FREESCALE SEMICONDUCTOR, INC.
- Jon Choy
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Memory with high speed sensing
- Patent number 7,701,785
- Issue date Apr 20, 2010
- FREESCALE SEMICONDUCTOR, INC.
- Padmaraj Sanjeevarao
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile memory having a static verify-read output data path
- Patent number 7,692,989
- Issue date Apr 6, 2010
- FREESCALE SEMICONDUCTOR, INC.
- Padmaraj Sanjeevarao
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
MEMORY WITH ONE-TIME PROGRAMMABLE (OTP) CELLS
- Publication number 20220301647
- Publication date Sep 22, 2022
- NXP USA, Inc.
- Jon Scott Choy
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY WITH CELLS HAVING MULTIPLE SELECT TRANSISTORS
- Publication number 20220101934
- Publication date Mar 31, 2022
- NXP USA, Inc.
- Padmaraj Sanjeevarao
- G11 - INFORMATION STORAGE
Information Patent Application
NON-VOLATILE MEMORY WITH VIRTUAL GROUND VOLTAGE PROVIDED TO UNSELEC...
- Publication number 20220101903
- Publication date Mar 31, 2022
- NXP USA, Inc.
- Jon Scott Choy
- G11 - INFORMATION STORAGE
Information Patent Application
NON-VOLATILE MEMORY WITH MULTIPLEXER TRANSISTOR REGULATOR CIRCUIT
- Publication number 20210319819
- Publication date Oct 14, 2021
- NXP USA, Inc.
- Padmaraj Sanjeevarao
- G11 - INFORMATION STORAGE
Information Patent Application
NON-VOLATILE MEMORY (NVM) WITH WORD LINE DRIVER/DECODER USING A CHA...
- Publication number 20140269140
- Publication date Sep 18, 2014
- PADMARAJ SANJEEVARAO
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE AND METHOD
- Publication number 20130044558
- Publication date Feb 21, 2013
- FREESCALE SEMICONDUCTOR, INC.
- Padmaraj Sanjeevarao
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY WITH HIGH SPEED SENSING
- Publication number 20090316509
- Publication date Dec 24, 2009
- Padmaraj Sanjeevarao
- G11 - INFORMATION STORAGE
Information Patent Application
NON-VOLATILE MEMORY HAVING A STATIC VERIFY-READ OUTPUT DATA PATH
- Publication number 20080266974
- Publication date Oct 30, 2008
- Padmaraj Sanjeevarao
- G11 - INFORMATION STORAGE

Padmaraj Sanjeevarao

Person

Patents Grantslast 30 patents

Memory with one-time programmable (OTP) cells and reading operation...

Memory with cells having multiple select transistors

Non-volatile memory with virtual ground voltage provided to unselec...

Non-volatile memory with multiplexer transistor regulator circuit

Memory with select line voltage control

Magnetoresistive random access memory (MRAM) with OTP cells

Magnetic disturb diagnostic system for MRAM

Decoder

Non-volatile memory (NVM) with word line driver/decoder using a cha...

Flash memory with bias voltage for word line/row driver

Memory device and method using encode values for access error condi...

Negative voltage generation

Memory with high speed sensing

Non-volatile memory having a static verify-read output data path

Patents Applicationslast 30 patents

MEMORY WITH ONE-TIME PROGRAMMABLE (OTP) CELLS

MEMORY WITH CELLS HAVING MULTIPLE SELECT TRANSISTORS

NON-VOLATILE MEMORY WITH VIRTUAL GROUND VOLTAGE PROVIDED TO UNSELEC...

NON-VOLATILE MEMORY WITH MULTIPLEXER TRANSISTOR REGULATOR CIRCUIT

NON-VOLATILE MEMORY (NVM) WITH WORD LINE DRIVER/DECODER USING A CHA...

MEMORY DEVICE AND METHOD

MEMORY WITH HIGH SPEED SENSING

NON-VOLATILE MEMORY HAVING A STATIC VERIFY-READ OUTPUT DATA PATH