Paolo Mutti

Person

Merano, IT

People

Patents Grantslast 30 patents

Information Patent Grant
Process for forming low defect density, ideal oxygen precipitating...
- Patent number 7,442,253
- Issue date Oct 28, 2008
- MEMC Electronic Materials, Inc.
- Robert J. Falster
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for preparing single crystal silicon having improved gate o...
- Patent number 7,431,765
- Issue date Oct 7, 2008
- MEMC Electronic Materials, Inc.
- Robert J. Falster
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Low defect density, ideal oxygen precipitating silicon
- Patent number 7,229,693
- Issue date Jun 12, 2007
- MEMC Electronic Materials, Inc.
- Robert J. Falster
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Single crystal silicon having improved gate oxide integrity
- Patent number 6,986,925
- Issue date Jan 17, 2006
- MEMC Electronic Materials, Inc.
- Robert J. Falster
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Process for producing low defect density, ideal oxygen precipitatin...
- Patent number 6,896,728
- Issue date May 24, 2005
- MEMC Electronic Materials, Inc.
- Robert J. Falster
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vacancy, dominsated, defect-free silicon
- Patent number 6,840,997
- Issue date Jan 11, 2005
- MEMC Electronic Materials, Inc.
- Robert A. Falster
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for controlling growth of a silicon crystal to minimize grow...
- Patent number 6,726,764
- Issue date Apr 27, 2004
- MEMC Electronic Materials, Inc.
- Paolo Mutti
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Process for growing a silicon crystal segment substantially free fr...
- Patent number 6,652,646
- Issue date Nov 25, 2003
- MEMC Electronic Materials, Inc.
- Robert J. Falster
- C30 - CRYSTAL GROWTH
Information Patent Grant
Low defect density epitaxial wafer and a process for the preparatio...
- Patent number 6,632,278
- Issue date Oct 14, 2003
- MEMC Electronic Materials, Inc.
- Robert A. Falster
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for producing low defect density, ideal oxygen precipitatin...
- Patent number 6,555,194
- Issue date Apr 29, 2003
- MEMC Electronic Materials, Inc.
- Robert A. Falster
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for growing silicon crystals which allows for variability i...
- Patent number 6,500,255
- Issue date Dec 31, 2002
- MEMC Electronic Materials, Inc.
- Robert J. Falster
- C30 - CRYSTAL GROWTH
Information Patent Grant
Low defect density, self-interstitial dominated silicon
- Patent number 6,409,826
- Issue date Jun 25, 2002
- MEMC Electronic Materials, Inc.
- Robert A. Falster
- C30 - CRYSTAL GROWTH
Information Patent Grant
Vacancy dominated, defect-free silicon
- Patent number 6,379,642
- Issue date Apr 30, 2002
- MEMC Electronic Materials, Inc.
- Robert A. Falster
- C30 - CRYSTAL GROWTH
Information Patent Grant
Process for preparing defect free silicon crystals which allows for...
- Patent number 6,312,516
- Issue date Nov 6, 2001
- MEMC Electronic Materials, Inc.
- Robert J. Falster
- C30 - CRYSTAL GROWTH
Information Patent Grant
Low defect density self-interstitial dominated silicon
- Patent number 6,254,672
- Issue date Jul 3, 2001
- MEMC Electronic Materials, Inc.
- Robert A. Falster
- C30 - CRYSTAL GROWTH
Information Patent Grant
Low defect density, ideal oxygen precipitating silicon
- Patent number 6,190,631
- Issue date Feb 20, 2001
- MEMC Electronic Materials, Inc.
- Robert A. Falster
- C30 - CRYSTAL GROWTH
Information Patent Grant
Low defect density vacancy dominated silicon
- Patent number 5,919,302
- Issue date Jul 6, 1999
- MEMC Electronic Materials, Inc.
- Robert A. Falster
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
SINGLE CRYSTAL SILICON HAVING IMPROVED GATE OXIDE INTEGRITY
- Publication number 20090022930
- Publication date Jan 22, 2009
- MEMC Electronic Materials, Inc.
- Robert J. Falster
- C30 - CRYSTAL GROWTH
Information Patent Application
PROCESS FOR FORMING LOW DEFECT DENSITY, IDEAL OXYGEN PRECIPITATING...
- Publication number 20070224783
- Publication date Sep 27, 2007
- MEMC Electronic Materials, Inc.
- Robert J. Falster
- C30 - CRYSTAL GROWTH
Information Patent Application
Vacancy-dominated, defect-free silicon
- Publication number 20050238905
- Publication date Oct 27, 2005
- MEMC Electronic Materials, Inc.
- Robert J. Falster
- C30 - CRYSTAL GROWTH
Information Patent Application
Low defect density, ideal oxygen precipitating silicon
- Publication number 20050170610
- Publication date Aug 4, 2005
- MEMC Electronic Materials, Inc.
- Robert J. Falster
- C30 - CRYSTAL GROWTH
Information Patent Application
Process for preparing single crystal silicon having improved gate o...
- Publication number 20050160967
- Publication date Jul 28, 2005
- MEMC Electronic Materials, Inc.
- Robert J. Falster
- C30 - CRYSTAL GROWTH
Information Patent Application
Process for producing low defect density silicon
- Publication number 20040089224
- Publication date May 13, 2004
- MEMC Electronic Materials, Inc.
- Robert J. Falster
- C30 - CRYSTAL GROWTH
Information Patent Application
Process for producing low defect density, ideal oxygen precipitatin...
- Publication number 20040025782
- Publication date Feb 12, 2004
- MEMC Electronic Materials, Inc.
- Robert J. Falster
- C30 - CRYSTAL GROWTH
Information Patent Application
Process for suppressing the nucleation and/or growth of interstitia...
- Publication number 20030196587
- Publication date Oct 23, 2003
- MEMC Electronic Materials, Inc.
- Kirk D. McCallum
- C30 - CRYSTAL GROWTH
Information Patent Application
Process for preparing defect free silicon crystals which allows for...
- Publication number 20030116081
- Publication date Jun 26, 2003
- MEMC Electronic Materials, Inc.
- Robert J. Falster
- C30 - CRYSTAL GROWTH
Information Patent Application
Vacancy, dominated, defect-free silicon
- Publication number 20030051657
- Publication date Mar 20, 2003
- MEMC Electronic Materials, Inc.
- Robert J. Falster
- C30 - CRYSTAL GROWTH
Information Patent Application
LOW DEFECT DENSITY EPITAXIAL WAFER AND A PROCESS FOR THE PREPARATIO...
- Publication number 20020170485
- Publication date Nov 21, 2002
- MEMC Electronic Materials, Inc.
- Robert J. Falster
- C30 - CRYSTAL GROWTH
Information Patent Application
Process for preparing single crystal silicon having improved gate o...
- Publication number 20020121238
- Publication date Sep 5, 2002
- MEMC Electronic Materials, Inc.
- Robert J. Falster
- C30 - CRYSTAL GROWTH
Information Patent Application
Vacancy, dominsated, defect-free silicon
- Publication number 20020078880
- Publication date Jun 27, 2002
- MEMC Electronic Materials, Inc.
- Robert J. Falster
- C30 - CRYSTAL GROWTH
Information Patent Application
Method for controlling growth of a silicon crystal to minimize grow...
- Publication number 20020043206
- Publication date Apr 18, 2002
- MEMC Electronic Materials,Inc.
- Paolo Mutti
- C30 - CRYSTAL GROWTH
Information Patent Application
Process for preparing defect free silicon crystals which allows for...
- Publication number 20010027743
- Publication date Oct 11, 2001
- Robert J. Falster
- C30 - CRYSTAL GROWTH
Information Patent Application
Low defect density, self-interstitial dominated silicon
- Publication number 20010025597
- Publication date Oct 4, 2001
- Robert J. Falster
- C30 - CRYSTAL GROWTH

Paolo Mutti

Person

Patents Grantslast 30 patents

Process for forming low defect density, ideal oxygen precipitating...

Process for preparing single crystal silicon having improved gate o...

Low defect density, ideal oxygen precipitating silicon

Single crystal silicon having improved gate oxide integrity

Process for producing low defect density, ideal oxygen precipitatin...

Vacancy, dominsated, defect-free silicon

Method for controlling growth of a silicon crystal to minimize grow...

Process for growing a silicon crystal segment substantially free fr...

Low defect density epitaxial wafer and a process for the preparatio...

Process for producing low defect density, ideal oxygen precipitatin...

Process for growing silicon crystals which allows for variability i...

Low defect density, self-interstitial dominated silicon

Vacancy dominated, defect-free silicon

Process for preparing defect free silicon crystals which allows for...

Low defect density self-interstitial dominated silicon

Low defect density, ideal oxygen precipitating silicon

Low defect density vacancy dominated silicon

Patents Applicationslast 30 patents

SINGLE CRYSTAL SILICON HAVING IMPROVED GATE OXIDE INTEGRITY

PROCESS FOR FORMING LOW DEFECT DENSITY, IDEAL OXYGEN PRECIPITATING...

Vacancy-dominated, defect-free silicon

Low defect density, ideal oxygen precipitating silicon

Process for preparing single crystal silicon having improved gate o...

Process for producing low defect density silicon

Process for producing low defect density, ideal oxygen precipitatin...

Process for suppressing the nucleation and/or growth of interstitia...

Process for preparing defect free silicon crystals which allows for...

Vacancy, dominated, defect-free silicon

LOW DEFECT DENSITY EPITAXIAL WAFER AND A PROCESS FOR THE PREPARATIO...

Process for preparing single crystal silicon having improved gate o...

Vacancy, dominsated, defect-free silicon

Method for controlling growth of a silicon crystal to minimize grow...

Process for preparing defect free silicon crystals which allows for...

Low defect density, self-interstitial dominated silicon