Patrice Gergaud

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La Buisse, FR

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Patents Grantslast 30 patents

Information Patent Grant
Process for producing an intermetallic contact based on Ni on InxGa...
- Patent number 10,361,087
- Issue date Jul 23, 2019
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Philippe Rodriguez
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing method for a device with transistors strained by sili...
- Patent number 9,093,552
- Issue date Jul 28, 2015
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Fabrice Nemouchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of producing a device with transistors strained by means of...
- Patent number 8,664,104
- Issue date Mar 4, 2014
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Fabrice Nemouchi
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
PROCEDE DE REALISATION DE CONTACT INTERMETALLIQUE A BASE DE NI SUR...
- Publication number 20190006182
- Publication date Jan 3, 2019
- Commissariat A L'Energie Atomique et Aux Energies Alternatives
- Philippe RODRIGUEZ
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MANUFACTURING METHOD FOR A DEVICE WITH TRANSISTORS STRAINED BY SILI...
- Publication number 20130214363
- Publication date Aug 22, 2013
- COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENE. ALT.
- Fabrice NEMOUCHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF PRODUCING A DEVICE WITH TRANSISTORS STRAINED BY MEANS OF...
- Publication number 20130214362
- Publication date Aug 22, 2013
- COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENE. ALT.
- Fabrice NEMOUCHI
- H01 - BASIC ELECTRIC ELEMENTS