Patrick SCHIAVONE

Person

VILLARD-BONNOT, FR

People

Patents Grantslast 30 patents

Information Patent Grant
Method for determining the dose corrections to be applied to an IC...
- Patent number 10,578,978
- Issue date Mar 3, 2020
- Aselta Nanographics
- Mohamed Saib
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Grant
Method for the correction of electron proximity effects
- Patent number 10,553,394
- Issue date Feb 4, 2020
- Aselta Nanographics
- Nader Jedidi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of performing dose modulation, in particular for electron be...
- Patent number 10,522,328
- Issue date Dec 31, 2019
- Aselta Nanographics
- Mohamed Saib
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for determining the parameters of an IC manufacturing proces...
- Patent number 10,295,912
- Issue date May 21, 2019
- Aselta Nanographics
- Mohamed Saib
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Grant
Method for determining the parameters of an IC manufacturing proces...
- Patent number 10,156,796
- Issue date Dec 18, 2018
- Aselta Nanographics
- Mohamed Saïb
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Method of correcting electron proximity effects using Voigt type sc...
- Patent number 9,934,336
- Issue date Apr 3, 2018
- Aselta Nanographics
- Jean-Herve Tortai
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method for correcting electronic proximity effects using off-center...
- Patent number 9,224,577
- Issue date Dec 29, 2015
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Patrick Schiavone
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method for minimizing the corner effect by densifying the insulatin...
- Patent number 7,838,443
- Issue date Nov 23, 2010
- Patrick Schiavone
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for minimizing corner effect by densifying the insulating layer
- Patent number 7,259,112
- Issue date Aug 21, 2007
- Fahrenheit Thermoscope, LLC
- Patrick Schiavone
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a sion antireflection film which is noncontaminat...
- Patent number 6,528,341
- Issue date Mar 4, 2003
- France Telecom
- Patrick Schiavone
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of correcting topographical effects on a micro-electronic su...
- Patent number 6,387,808
- Issue date May 14, 2002
- France Telecom
- André Schiltz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for etching the gate in MOS technology using a SiON-based h...
- Patent number 6,171,973
- Issue date Jan 9, 2001
- France Telecom
- Patrick Schiavone
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY

Patents Applicationslast 30 patents

Information Patent Application
METHOD FOR DETERMINING THE DOSE CORRECTIONS TO BE APPLIED TO AN IC...
- Publication number 20180203361
- Publication date Jul 19, 2018
- ASELTA NANOGRAPHICS
- Mohamed SAIB
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Application
METHOD OF PERFORMING DOSE MODULATION, IN PARTICULAR FOR ELECTRON BE...
- Publication number 20180204707
- Publication date Jul 19, 2018
- ASELTA NANOGRAPHICS
- Mohamed SAIB
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR DETERMINING THE PARAMETERS OF AN IC MANUFACTURING PROCES...
- Publication number 20170168401
- Publication date Jun 15, 2017
- ASELTA NANOGRAPHICS
- Mohamed SAIB
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR CALCULATING THE METRICS OF AN IC MANUFACTURING PROCESS
- Publication number 20170123322
- Publication date May 4, 2017
- Commissariat A L'Energie Atomique et Aux Energies Alternatives
- Mohamed SAÏB
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
METHOD FOR DETERMINING THE PARAMETERS OF AN IC MANUFACTURING PROCES...
- Publication number 20170075225
- Publication date Mar 16, 2017
- ASELTA NANOGRAPHICS
- Mohamed SAÏB
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
METHOD FOR THE CORRECTION OF ELECTRON PROXIMITY EFFECTS
- Publication number 20160211115
- Publication date Jul 21, 2016
- ASELTA NANOGRAPHICS
- Nader JEDIDI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF CORRECTING ELECTRON PROXIMITY EFFECTS USING VOIGT TYPE SC...
- Publication number 20130275098
- Publication date Oct 17, 2013
- Jean-Herve TORTAI
- B82 - NANO-TECHNOLOGY
Information Patent Application
METHOD FOR CORRECTING ELECTRONIC PROXIMITY EFFECTS USING OFF-CENTER...
- Publication number 20130043389
- Publication date Feb 21, 2013
- ASELTA NANOGRAPHICS
- Patrick SCHIAVONE
- B82 - NANO-TECHNOLOGY
Information Patent Application
METHOD FOR MINIMIZING THE CORNER EFFECT BY DENSIFYING THE INSULATIN...
- Publication number 20080014366
- Publication date Jan 17, 2008
- Patrick Schiavone
- H01 - BASIC ELECTRIC ELEMENTS

Patrick SCHIAVONE

Person

Patents Grantslast 30 patents

Method for determining the dose corrections to be applied to an IC...

Method for the correction of electron proximity effects

Method of performing dose modulation, in particular for electron be...

Method for determining the parameters of an IC manufacturing proces...

Method for determining the parameters of an IC manufacturing proces...

Method of correcting electron proximity effects using Voigt type sc...

Method for correcting electronic proximity effects using off-center...

Method for minimizing the corner effect by densifying the insulatin...

Method for minimizing corner effect by densifying the insulating layer

Method of forming a sion antireflection film which is noncontaminat...

Method of correcting topographical effects on a micro-electronic su...

Process for etching the gate in MOS technology using a SiON-based h...

Patents Applicationslast 30 patents

METHOD FOR DETERMINING THE DOSE CORRECTIONS TO BE APPLIED TO AN IC...

METHOD OF PERFORMING DOSE MODULATION, IN PARTICULAR FOR ELECTRON BE...

METHOD FOR DETERMINING THE PARAMETERS OF AN IC MANUFACTURING PROCES...

METHOD FOR CALCULATING THE METRICS OF AN IC MANUFACTURING PROCESS

METHOD FOR DETERMINING THE PARAMETERS OF AN IC MANUFACTURING PROCES...

METHOD FOR THE CORRECTION OF ELECTRON PROXIMITY EFFECTS

METHOD OF CORRECTING ELECTRON PROXIMITY EFFECTS USING VOIGT TYPE SC...

METHOD FOR CORRECTING ELECTRONIC PROXIMITY EFFECTS USING OFF-CENTER...

METHOD FOR MINIMIZING THE CORNER EFFECT BY DENSIFYING THE INSULATIN...