Patrick Soukiassian

Person

Remy les Chevreuse, FR

People

Patents Grantslast 30 patents

Information Patent Grant
Graphene epitaxied on SiC, with an open band gap and mobility compa...
- Patent number 8,906,784
- Issue date Dec 9, 2014
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Shirley Chiang
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Photon-emission scanning tunneling microscopy
- Patent number 8,006,315
- Issue date Aug 23, 2011
- Commissariat a l'Energie Atomique
- Fabrice Charra
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Monoatomic and moncrystalline layer of large size, in diamond type...
- Patent number 6,924,509
- Issue date Aug 2, 2005
- Commissariat a l'Energie Atomique
- Vincent Derycke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon layer highly sensitive to oxygen and method for obtaining same
- Patent number 6,667,102
- Issue date Dec 23, 2003
- Commissariat a l'Energie Atomique
- Fabrice Amy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Very long and highly stable atomic wires, method for making these w...
- Patent number 6,274,234
- Issue date Aug 14, 2001
- Commissariat a l'Energie Atomique
- Gérald Dujardin
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
GRAPHENE EPITAXIED ON SIC, WITH AN OPEN BAND GAP AND MOBILITY COMPA...
- Publication number 20130126865
- Publication date May 23, 2013
- Shirley Chiang
- B82 - NANO-TECHNOLOGY
Information Patent Application
Nanostructures With 0, 1, 2, and 3 Dimensions, With Negative Differ...
- Publication number 20100072472
- Publication date Mar 25, 2010
- Patrick Soukiassian
- B82 - NANO-TECHNOLOGY
Information Patent Application
SUBSTRATE, IN PARTICULAR MADE OF SILICON CARBIDE, COATED WITH A THI...
- Publication number 20100012949
- Publication date Jan 21, 2010
- COMMISSARIAT A L'ENERGIE ATOMIQUE
- Patrick Soukiassian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Highly Oxygen-Sensitive Silicon Layer and Method for Obtaining Same
- Publication number 20090294776
- Publication date Dec 3, 2009
- Commissarita A L'energie Atomique
- Patrick Soukiassian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Photon-Emission Scanning Tunneling Microscopy
- Publication number 20090300805
- Publication date Dec 3, 2009
- COMMISSARIAT A L'ENERGIE ATOMIQUE
- Fabrice Charra
- G01 - MEASURING TESTING
Information Patent Application
Anti-Reflecting Coatings for Solar Batteries and Method for the Pro...
- Publication number 20080193635
- Publication date Aug 14, 2008
- Vladimir Aroutiounian
- G02 - OPTICS
Information Patent Application
Method for Metallizing the Pre-Passivated Surface of a Semiconducto...
- Publication number 20080026231
- Publication date Jan 31, 2008
- COMMISSARIAT A L'ENERGIE ATOMIQUE
- Claudio Radtke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Metal nano-objects, formed on semiconductor surfaces, and method fo...
- Publication number 20050211970
- Publication date Sep 29, 2005
- Marie D'Angelo
- C30 - CRYSTAL GROWTH
Information Patent Application
Monoatomic and moncrystalline layer of large size, in diamond type...
- Publication number 20050035380
- Publication date Feb 17, 2005
- Vincent Derycke
- C30 - CRYSTAL GROWTH
Information Patent Application
Method for the production of one-dimensional nanostructures and nan...
- Publication number 20040132242
- Publication date Jul 8, 2004
- Marie D'Angelo
- B82 - NANO-TECHNOLOGY

Patrick Soukiassian

Person

Patents Grantslast 30 patents

Graphene epitaxied on SiC, with an open band gap and mobility compa...

Photon-emission scanning tunneling microscopy

Monoatomic and moncrystalline layer of large size, in diamond type...

Silicon layer highly sensitive to oxygen and method for obtaining same

Very long and highly stable atomic wires, method for making these w...

Patents Applicationslast 30 patents

GRAPHENE EPITAXIED ON SIC, WITH AN OPEN BAND GAP AND MOBILITY COMPA...

Nanostructures With 0, 1, 2, and 3 Dimensions, With Negative Differ...

SUBSTRATE, IN PARTICULAR MADE OF SILICON CARBIDE, COATED WITH A THI...

Highly Oxygen-Sensitive Silicon Layer and Method for Obtaining Same

Photon-Emission Scanning Tunneling Microscopy

Anti-Reflecting Coatings for Solar Batteries and Method for the Pro...

Method for Metallizing the Pre-Passivated Surface of a Semiconducto...

Metal nano-objects, formed on semiconductor surfaces, and method fo...

Monoatomic and moncrystalline layer of large size, in diamond type...

Method for the production of one-dimensional nanostructures and nan...