Patrik SVENSSON

Person

Palo Alto, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
III-nitride nanowire LED with strain modified surface active region...
- Patent number 10,026,866
- Issue date Jul 17, 2018
- GLO AB
- Linda Romano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-nitride nanowire LED with strain modified surface active region...
- Patent number 9,761,757
- Issue date Sep 12, 2017
- GLO AB
- Linda Romano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Coalesced nanowire structures with interstitial voids and method fo...
- Patent number 9,570,651
- Issue date Feb 14, 2017
- GLO AB
- Patrik Svensson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-nitride nanowire LED with strain modified surface active region...
- Patent number 9,281,442
- Issue date Mar 8, 2016
- GLO AB
- Linda Romano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Coalesced nanowire structures with interstitial voids and method fo...
- Patent number 9,035,278
- Issue date May 19, 2015
- GLO AB
- Patrik Svensson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanowire growth on dissimilar material
- Patent number 9,012,887
- Issue date Apr 21, 2015
- QuNano AB
- Lars Samuelson
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Grant
Coalesced nanowire structures with interstitial voids and method fo...
- Patent number 8,901,534
- Issue date Dec 2, 2014
- GLO AB
- Patrik Svensson
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Coalesced nanowire structures with interstitial voids and method fo...
- Patent number 8,350,249
- Issue date Jan 8, 2013
- GLO AB
- Patrik Svensson
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC

Patents Applicationslast 30 patents

Information Patent Application
III-NITRIDE NANOWIRE LED WITH STRAIN MODIFIED SURFACE ACTIVE REGION...
- Publication number 20170345969
- Publication date Nov 30, 2017
- GLO AB
- Linda ROMANO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COALESCED NANOWIRE STRUCTURES WITH INTERSTITIAL VOIDS AND METHOD FO...
- Publication number 20170170261
- Publication date Jun 15, 2017
- GLO AB
- Patrik SVENSSON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-NITRIDE NANOWIRE LED WITH STRAIN MODIFIED SURFACE ACTIVE REGION...
- Publication number 20160260866
- Publication date Sep 8, 2016
- GLO AB
- Linda ROMANO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COALESCED NANOWIRE STRUCTURES WITH INTERSTITIAL VOIDS AND METHOD FO...
- Publication number 20150221821
- Publication date Aug 6, 2015
- GLO AB
- Patrik SVENSSON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-NITRIDE NANOWIRE LED WITH STRAIN MODIFIED SURFACE ACTIVE REGION...
- Publication number 20150207028
- Publication date Jul 23, 2015
- GLO AB
- Linda ROMANO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COALESCED NANOWIRE STRUCTURES WITH INTERSTITIAL VOIDS AND METHOD FO...
- Publication number 20130092899
- Publication date Apr 18, 2013
- GLO AB
- Patrik Svensson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COALESCED NANOWIRE STRUCTURES WITH INTERSTITIAL VOIDS AND METHOD FO...
- Publication number 20130075693
- Publication date Mar 28, 2013
- GLO AB
- Patrik SVENSSON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOWIRE GROWTH ON DISSIMILAR MATERIAL
- Publication number 20120145990
- Publication date Jun 14, 2012
- QuNano AB
- Lars Samuelson
- B81 - MICRO-STRUCTURAL TECHNOLOGY

Patrik SVENSSON

Person

Patents Grantslast 30 patents

III-nitride nanowire LED with strain modified surface active region...

III-nitride nanowire LED with strain modified surface active region...

Coalesced nanowire structures with interstitial voids and method fo...

III-nitride nanowire LED with strain modified surface active region...

Coalesced nanowire structures with interstitial voids and method fo...

Nanowire growth on dissimilar material

Coalesced nanowire structures with interstitial voids and method fo...

Coalesced nanowire structures with interstitial voids and method fo...

Patents Applicationslast 30 patents

III-NITRIDE NANOWIRE LED WITH STRAIN MODIFIED SURFACE ACTIVE REGION...

COALESCED NANOWIRE STRUCTURES WITH INTERSTITIAL VOIDS AND METHOD FO...

III-NITRIDE NANOWIRE LED WITH STRAIN MODIFIED SURFACE ACTIVE REGION...

COALESCED NANOWIRE STRUCTURES WITH INTERSTITIAL VOIDS AND METHOD FO...

III-NITRIDE NANOWIRE LED WITH STRAIN MODIFIED SURFACE ACTIVE REGION...

COALESCED NANOWIRE STRUCTURES WITH INTERSTITIAL VOIDS AND METHOD FO...

COALESCED NANOWIRE STRUCTURES WITH INTERSTITIAL VOIDS AND METHOD FO...

NANOWIRE GROWTH ON DISSIMILAR MATERIAL