Paul Abel

Person

Austin, TX, US

People

Patents Grantslast 30 patents

Information Patent Grant
Ruthenium CMP chemistry based on halogenation
- Patent number 12,037,517
- Issue date Jul 16, 2024
- Tokyo Electron Limited
- Paul Abel
- B24 - GRINDING POLISHING
Information Patent Grant
Dynamically adjusted purge timing in wet atomic layer etching
- Patent number 11,915,941
- Issue date Feb 27, 2024
- Tokyo Electron Limited
- Jacques Faguet
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for wet atomic layer etching of copper
- Patent number 11,866,831
- Issue date Jan 9, 2024
- Tokyo Electron Limited
- Christopher Netzband
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Ruthenium CMP chemistry based on halogenation
- Patent number 11,820,919
- Issue date Nov 21, 2023
- Tokyo Electron Limited
- Paul Abel
- B24 - GRINDING POLISHING
Information Patent Grant
Methods for wet atomic layer etching of ruthenium
- Patent number 11,802,342
- Issue date Oct 31, 2023
- Tokyo Electron Limited
- Paul Abel
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Processing system and platform for wet atomic layer etching using s...
- Patent number 11,437,250
- Issue date Sep 6, 2022
- Tokyo Electron Limited
- Paul Abel
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Wet atomic layer etching using self-limiting and solubility-limited...
- Patent number 10,982,335
- Issue date Apr 20, 2021
- Tokyo Electron Limited
- Paul Abel
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Photonically tuned etchant reactivity for wet etching
- Patent number 10,867,815
- Issue date Dec 15, 2020
- Tokyo Electron Limited
- Paul Abel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Sub-stoichiometric, chalcogen-containing-germanium, tin, or lead an...
- Patent number 9,680,151
- Issue date Jun 13, 2017
- Board of Regents, The University of Texas System
- Charles Buddie Mullins
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Ruthenium CMP Chemistry Based On Halogenation
- Publication number 20240043721
- Publication date Feb 8, 2024
- TOKYO ELECTRON LIMITED
- Paul Abel
- B24 - GRINDING POLISHING
Information Patent Application
Methods For Selective Removal Of Surface Oxides On Metal Films
- Publication number 20230402276
- Publication date Dec 14, 2023
- TOKYO ELECTRON LIMITED
- Omid Zandi
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Methods For Wet Atomic Layer Etching Of Copper
- Publication number 20230140900
- Publication date May 11, 2023
- TOKYO ELECTRON LIMITED
- Christopher Netzband
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Ruthenium CMP Chemistry Based On Halogenation
- Publication number 20230118455
- Publication date Apr 20, 2023
- TOKYO ELECTRON LIMITED
- Paul Abel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods For Wet Atomic Layer Etching Of Ruthenium
- Publication number 20230118554
- Publication date Apr 20, 2023
- TOKYO ELECTRON LIMITED
- Paul Abel
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHODS FOR WET ETCHING OF NOBLE METALS
- Publication number 20230121246
- Publication date Apr 20, 2023
- TOKYO ELECTRON LIMITED
- Paul Abel
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Methods For Non-Isothermal Wet Atomic Layer Etching
- Publication number 20230117790
- Publication date Apr 20, 2023
- TOKYO ELECTRON LIMITED
- Paul Abel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Dynamically Adjusted Purge Timing In Wet Atomic Layer Etching
- Publication number 20220254646
- Publication date Aug 11, 2022
- TOKYO ELECTRON LIMITED
- Jacques Faguet
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Systems For Etching A Substrate Using A Hybrid Wet Atomic Layer Etc...
- Publication number 20220148885
- Publication date May 12, 2022
- TOKYO ELECTRON LIMITED
- Paul Abel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods For Etching A Substrate Using A Hybrid Wet Atomic Layer Etc...
- Publication number 20220148882
- Publication date May 12, 2022
- TOKYO ELECTRON LIMITED
- Paul Abel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR USING ULTRA-THIN ETCH STOP LAYERS IN SELECTIVE ATOMIC LA...
- Publication number 20210242031
- Publication date Aug 5, 2021
- TOKYO ELECTRON LIMITED
- Omid Zandi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Processing System and Platform for Wet Atomic Layer Etching Using S...
- Publication number 20200161148
- Publication date May 21, 2020
- TOKYO ELECTRON LIMITED
- Paul Abel
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Wet Atomic Layer Etching Using Self-Limiting and Solubility-Limited...
- Publication number 20200157693
- Publication date May 21, 2020
- TOKYO ELECTRON LIMITED
- Paul Abel
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
PHOTONICALLY TUNED ETCHANT REACTIVITY FOR WET ETCHING
- Publication number 20200075358
- Publication date Mar 5, 2020
- TOKYO ELECTRON LIMITED
- Paul ABEL
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUB-STOICHIOMETRIC, CHALCOGEN-CONTAINING-GERMANIUM, TIN, OR LEAD AN...
- Publication number 20150102257
- Publication date Apr 16, 2015
- Charles Buddie Mullins
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Ruthenium CMP chemistry based on halogenation

Dynamically adjusted purge timing in wet atomic layer etching

Methods for wet atomic layer etching of copper

Ruthenium CMP chemistry based on halogenation

Methods for wet atomic layer etching of ruthenium

Processing system and platform for wet atomic layer etching using s...

Wet atomic layer etching using self-limiting and solubility-limited...

Photonically tuned etchant reactivity for wet etching

Sub-stoichiometric, chalcogen-containing-germanium, tin, or lead an...

Patents Applicationslast 30 patents

Ruthenium CMP Chemistry Based On Halogenation

Methods For Selective Removal Of Surface Oxides On Metal Films

Methods For Wet Atomic Layer Etching Of Copper

Ruthenium CMP Chemistry Based On Halogenation

Methods For Wet Atomic Layer Etching Of Ruthenium

METHODS FOR WET ETCHING OF NOBLE METALS

Methods For Non-Isothermal Wet Atomic Layer Etching

Dynamically Adjusted Purge Timing In Wet Atomic Layer Etching

Systems For Etching A Substrate Using A Hybrid Wet Atomic Layer Etc...

Methods For Etching A Substrate Using A Hybrid Wet Atomic Layer Etc...

METHOD FOR USING ULTRA-THIN ETCH STOP LAYERS IN SELECTIVE ATOMIC LA...

Processing System and Platform for Wet Atomic Layer Etching Using S...

Wet Atomic Layer Etching Using Self-Limiting and Solubility-Limited...

PHOTONICALLY TUNED ETCHANT REACTIVITY FOR WET ETCHING

SUB-STOICHIOMETRIC, CHALCOGEN-CONTAINING-GERMANIUM, TIN, OR LEAD AN...