Paul B. Fischer

Person

Hillsboro, OR, US

People

Patents Grantslast 30 patents

Information Patent Grant
Microelectronic assemblies
- Patent number 12,176,323
- Issue date Dec 24, 2024
- Intel Corporation
- Adel A. Elsherbini
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integration of Si-based transistors with non-Si technologies by sem...
- Patent number 12,148,757
- Issue date Nov 19, 2024
- Intel Corporation
- Nidhi Nidhi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium nitride (GAN) three-dimensional integrated circuit technology
- Patent number 12,148,747
- Issue date Nov 19, 2024
- Intel Corporation
- Han Wui Then
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicide for group III-nitride devices and methods of fabrication
- Patent number 12,080,763
- Issue date Sep 3, 2024
- Intel Corporation
- Sansaptak Dasgupta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-N transistor arrangements for reducing nonlinearity of off-stat...
- Patent number 12,027,613
- Issue date Jul 2, 2024
- Intel Corporation
- Nidhi Nidhi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Apparatus with multi-wafer based device and method for forming such
- Patent number 11,948,831
- Issue date Apr 2, 2024
- Intel Corporation
- Anup Pancholi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Superlattice FINFET with tunable drive current capability
- Patent number 11,881,511
- Issue date Jan 23, 2024
- Intel Corporation
- Nidhi Nidhi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit device structures and double-sided electrical te...
- Patent number 11,854,894
- Issue date Dec 26, 2023
- Intel Corporation
- Valluri R. Rao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integration of III-N transistors and semiconductor layer transfer
- Patent number 11,791,221
- Issue date Oct 17, 2023
- Intel Corporation
- Sansaptak Dasgupta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
E-D mode 2DEG FET with gate spacer to locally tune VT and improve b...
- Patent number 11,757,027
- Issue date Sep 12, 2023
- Intel Corporation
- Rahul Ramaswamy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Microelectronic assemblies
- Patent number 11,721,649
- Issue date Aug 8, 2023
- Intel Corporation
- Adel A. Elsherbini
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III-Nitride devices on SOI substrates having a compliant layer
- Patent number 11,715,791
- Issue date Aug 1, 2023
- Intel Corporation
- Marko Radosavljevic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Charge-induced threshold voltage tuning in III-N transistors
- Patent number 11,715,790
- Issue date Aug 1, 2023
- Intel Corporation
- Nidhi Nidhi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Acoustic resonator structure
- Patent number 11,705,882
- Issue date Jul 18, 2023
- Intel Corporation
- Paul Fischer
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
III-N transistors with local stressors for threshold voltage control
- Patent number 11,670,709
- Issue date Jun 6, 2023
- Intel Corporation
- Sansaptak Dasgupta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Logic circuit with indium nitride quantum well
- Patent number 11,670,637
- Issue date Jun 6, 2023
- Intel Corporation
- Marko Radosavljevic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Film bulk acoustic resonator (FBAR) devices for high frequency RF f...
- Patent number 11,671,075
- Issue date Jun 6, 2023
- Intel Corporation
- Sansaptak Dasgupta
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
III-N metal-insulator-semiconductor field effect transistors with m...
- Patent number 11,664,417
- Issue date May 30, 2023
- Intel Corporation
- Walid Hafez
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistors with ion- or fixed charge-based field plate structures
- Patent number 11,658,217
- Issue date May 23, 2023
- Intel Corporation
- Han Wui Then
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-N transistors integrated with thin-film transistors having grad...
- Patent number 11,652,143
- Issue date May 16, 2023
- Intel Corporation
- Han Wui Then
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Antenna gate field plate on 2DEG planar FET
- Patent number 11,626,513
- Issue date Apr 11, 2023
- Intel Corporation
- Rahul Ramaswamy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FBAR devices having multiple epitaxial layers stacked on a same sub...
- Patent number 11,616,488
- Issue date Mar 28, 2023
- Intel Corporation
- Sansaptak Dasgupta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Peripheral inductors
- Patent number 11,616,014
- Issue date Mar 28, 2023
- Intel Corporation
- Kevin L. Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Side-by-side integration of III-n transistors and thin-film transis...
- Patent number 11,610,887
- Issue date Mar 21, 2023
- Intel Corporation
- Han Wui Then
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cap layer on a polarization layer to preserve channel sheet resistance
- Patent number 11,610,971
- Issue date Mar 21, 2023
- Intel Corporation
- Sansaptak Dasgupta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication and use of through silicon vias on double sided interco...
- Patent number 11,594,524
- Issue date Feb 28, 2023
- Intel Corporation
- Brennen K. Mueller
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Techniques for revealing a backside of an integrated circuit device...
- Patent number 11,594,452
- Issue date Feb 28, 2023
- Intel Corporation
- Il-Seok Son
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Planar transistors with wrap-around gates and wrap-around source an...
- Patent number 11,588,037
- Issue date Feb 21, 2023
- Intel Corporation
- Nidhi Nidhi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integration of passive components in III-N devices
- Patent number 11,587,924
- Issue date Feb 21, 2023
- Intel Corporation
- Nidhi Nidhi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integration of III-N transistors and non-III-N transistors by semic...
- Patent number 11,581,313
- Issue date Feb 14, 2023
- Intel Corporation
- Sansaptak Dasgupta
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
GALLIUM NITRIDE (GAN) THREE-DIMENSIONAL INTEGRATED CIRCUIT TECHNOLOGY
- Publication number 20250040231
- Publication date Jan 30, 2025
- Intel Corporation
- Han Wui THEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICE STRUCTURES AND DOUBLE-SIDED ELECTRICAL TE...
- Publication number 20240194533
- Publication date Jun 13, 2024
- Intel Corporation
- Valluri R. RAO
- G01 - MEASURING TESTING
Information Patent Application
TECHNOLOGIES FOR THERMOELECTRIC-ENHANCED COOLING
- Publication number 20230207421
- Publication date Jun 29, 2023
- Intel Corporation
- Han Wui Then
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED GROUP III-NITROGEN AND SILICON TRANSISTORS ON THE SAME DIE
- Publication number 20230197732
- Publication date Jun 22, 2023
- Intel Corporation
- Marko Radosavljevic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE TRANSISTORS WITH RELIABILITY ENHANCEMENTS
- Publication number 20230108072
- Publication date Apr 6, 2023
- Intel Corporation
- Han Wui Then
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE (GAN) LAYER TRANSFER FOR INTEGRATED CIRCUIT TECHNOLOGY
- Publication number 20230090106
- Publication date Mar 23, 2023
- Intel Corporation
- Han Wui THEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIGITALLY CONTROLLED LITHOGRAPHICALLY-DEFINED MULTI-FREQUENCY ACOUS...
- Publication number 20230091766
- Publication date Mar 23, 2023
- Intel Corporation
- Ved V. Gund
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
GALLIUM NITRIDE (GAN) INTEGRATED CIRCUIT TECHNOLOGY WITH OPTICAL CO...
- Publication number 20230081460
- Publication date Mar 16, 2023
- Intel Corporation
- Han Wui THEN
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
HYBRID LASER WITH AMORPHOUS BONDING LAYER
- Publication number 20230075255
- Publication date Mar 9, 2023
- Intel Corporation
- John Heck
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE (GAN) INTEGRATED CIRCUIT TECHNOLOGY WITH MULTI-LAYE...
- Publication number 20230069054
- Publication date Mar 2, 2023
- Intel Corporation
- Souvik GHOSH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE (GAN) EPITAXY ON PATTERNED SUBSTRATE FOR INTEGRATED...
- Publication number 20230066336
- Publication date Mar 2, 2023
- Intel Corporation
- Pratik KOIRALA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE (GAN) LAYER TRANSFER AND REGROWTH FOR INTEGRATED CI...
- Publication number 20230054719
- Publication date Feb 23, 2023
- Intel Corporation
- Pratik KOIRALA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICIDE FOR GROUP III-NITRIDE DEVICES AND METHODS OF FABRICATION
- Publication number 20220293738
- Publication date Sep 15, 2022
- Intel Corporation
- Sansaptak DASGUPTA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MICROELECTRONIC ASSEMBLIES
- Publication number 20220278057
- Publication date Sep 1, 2022
- Intel Corporation
- Adel A. Elsherbini
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MICROELECTRONIC ASSEMBLIES
- Publication number 20220254754
- Publication date Aug 11, 2022
- Intel Corporation
- Adel A. ELSHERBINI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FABRICATION AND USE OF THROUGH SILICON VIAS ON DOUBLE SIDED INTERCO...
- Publication number 20220130803
- Publication date Apr 28, 2022
- Intel Corporation
- Brennen K. MUELLER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE (GAN) THREE-DIMENSIONAL INTEGRATED CIRCUIT TECHNOLOGY
- Publication number 20220102339
- Publication date Mar 31, 2022
- Intel Corporation
- Han Wui THEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE (GAN) THREE-DIMENSIONAL INTEGRATED CIRCUIT TECHNOLOGY
- Publication number 20220102344
- Publication date Mar 31, 2022
- Intel Corporation
- Han Wui THEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D HETEROGENEOUS INTEGRATED CRYSTALLINE PIEZOELECTRIC BULK ACOUSTIC...
- Publication number 20220093683
- Publication date Mar 24, 2022
- Intel Corporation
- Han Wui THEN
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
III-N TRANSISTORS WITH INTEGRATED LINEARIZATION DEVICES
- Publication number 20220068910
- Publication date Mar 3, 2022
- Intel Corporation
- Han Wui Then
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
APPARATUS WITH MULTI-WAFER BASED DEVICE AND METHOD FOR FORMING SUCH
- Publication number 20210280453
- Publication date Sep 9, 2021
- Intel Corporation
- Anup Pancholi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BROADBAND ACOUSTIC WAVE RESONATOR (AWR) FILTERS
- Publication number 20210194459
- Publication date Jun 24, 2021
- Intel Corporation
- Hossein Alavi
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
INTEGRATED CIRCUIT DEVICE STRUCTURES AND DOUBLE-SIDED ELECTRICAL TE...
- Publication number 20210175124
- Publication date Jun 10, 2021
- Intel Corporation
- Valluri R. RAO
- G01 - MEASURING TESTING
Information Patent Application
TECHNIQUES FOR REVEALING A BACKSIDE OF AN INTEGRATED CIRCUIT DEVICE...
- Publication number 20210104435
- Publication date Apr 8, 2021
- Intel Corporation
- Il-Seok SON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROUP III-NITRIDE DEVICES ON SOI SUBSTRATES HAVING A COMPLIANT LAYER
- Publication number 20200411678
- Publication date Dec 31, 2020
- Intel Corporation
- Marko Radosavljevic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CO-INTEGRATION OF EXTENDED-DRAIN AND SELF-ALIGNED III-N TRANSISTORS...
- Publication number 20200395358
- Publication date Dec 17, 2020
- Intel Corporation
- Marko Radosavljevic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FILM BULK ACOUSTIC RESONATOR (FBAR) DEVICES FOR HIGH FREQUENCY RF F...
- Publication number 20200382099
- Publication date Dec 3, 2020
- Intel Corporation
- SANSAPTAK DASGUPTA
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
ENHANCEMENT-DEPLETION CASCODE ARRANGEMENTS FOR ENHANCEMENT MODE III...
- Publication number 20200373297
- Publication date Nov 26, 2020
- Intel Corporation
- Nidhi Nidhi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-N TRANSISTOR ARRANGEMENTS FOR REDUCING NONLINEARITY OF OFF-STAT...
- Publication number 20200373421
- Publication date Nov 26, 2020
- Intel Corporation
- Nidhi Nidhi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PERIPHERAL INDUCTORS
- Publication number 20200365510
- Publication date Nov 19, 2020
- Intel Corporation
- Kevin L. Lin
- H01 - BASIC ELECTRIC ELEMENTS

Paul B. Fischer

Person

Patents Grantslast 30 patents

Microelectronic assemblies

Integration of Si-based transistors with non-Si technologies by sem...

Gallium nitride (GAN) three-dimensional integrated circuit technology

Silicide for group III-nitride devices and methods of fabrication

III-N transistor arrangements for reducing nonlinearity of off-stat...

Apparatus with multi-wafer based device and method for forming such

Superlattice FINFET with tunable drive current capability

Integrated circuit device structures and double-sided electrical te...

Integration of III-N transistors and semiconductor layer transfer

E-D mode 2DEG FET with gate spacer to locally tune VT and improve b...

Microelectronic assemblies

Group III-Nitride devices on SOI substrates having a compliant layer

Charge-induced threshold voltage tuning in III-N transistors

Acoustic resonator structure

III-N transistors with local stressors for threshold voltage control

Logic circuit with indium nitride quantum well

Film bulk acoustic resonator (FBAR) devices for high frequency RF f...

III-N metal-insulator-semiconductor field effect transistors with m...

Transistors with ion- or fixed charge-based field plate structures

III-N transistors integrated with thin-film transistors having grad...

Antenna gate field plate on 2DEG planar FET

FBAR devices having multiple epitaxial layers stacked on a same sub...

Peripheral inductors

Side-by-side integration of III-n transistors and thin-film transis...

Cap layer on a polarization layer to preserve channel sheet resistance

Fabrication and use of through silicon vias on double sided interco...

Techniques for revealing a backside of an integrated circuit device...

Planar transistors with wrap-around gates and wrap-around source an...

Integration of passive components in III-N devices

Integration of III-N transistors and non-III-N transistors by semic...

Patents Applicationslast 30 patents

GALLIUM NITRIDE (GAN) THREE-DIMENSIONAL INTEGRATED CIRCUIT TECHNOLOGY

INTEGRATED CIRCUIT DEVICE STRUCTURES AND DOUBLE-SIDED ELECTRICAL TE...

TECHNOLOGIES FOR THERMOELECTRIC-ENHANCED COOLING

INTEGRATED GROUP III-NITROGEN AND SILICON TRANSISTORS ON THE SAME DIE

GALLIUM NITRIDE TRANSISTORS WITH RELIABILITY ENHANCEMENTS

GALLIUM NITRIDE (GAN) LAYER TRANSFER FOR INTEGRATED CIRCUIT TECHNOLOGY

DIGITALLY CONTROLLED LITHOGRAPHICALLY-DEFINED MULTI-FREQUENCY ACOUS...

GALLIUM NITRIDE (GAN) INTEGRATED CIRCUIT TECHNOLOGY WITH OPTICAL CO...

HYBRID LASER WITH AMORPHOUS BONDING LAYER

GALLIUM NITRIDE (GAN) INTEGRATED CIRCUIT TECHNOLOGY WITH MULTI-LAYE...

GALLIUM NITRIDE (GAN) EPITAXY ON PATTERNED SUBSTRATE FOR INTEGRATED...

GALLIUM NITRIDE (GAN) LAYER TRANSFER AND REGROWTH FOR INTEGRATED CI...

SILICIDE FOR GROUP III-NITRIDE DEVICES AND METHODS OF FABRICATION

MICROELECTRONIC ASSEMBLIES

MICROELECTRONIC ASSEMBLIES

FABRICATION AND USE OF THROUGH SILICON VIAS ON DOUBLE SIDED INTERCO...

GALLIUM NITRIDE (GAN) THREE-DIMENSIONAL INTEGRATED CIRCUIT TECHNOLOGY

GALLIUM NITRIDE (GAN) THREE-DIMENSIONAL INTEGRATED CIRCUIT TECHNOLOGY

3D HETEROGENEOUS INTEGRATED CRYSTALLINE PIEZOELECTRIC BULK ACOUSTIC...

III-N TRANSISTORS WITH INTEGRATED LINEARIZATION DEVICES

APPARATUS WITH MULTI-WAFER BASED DEVICE AND METHOD FOR FORMING SUCH

BROADBAND ACOUSTIC WAVE RESONATOR (AWR) FILTERS

INTEGRATED CIRCUIT DEVICE STRUCTURES AND DOUBLE-SIDED ELECTRICAL TE...

TECHNIQUES FOR REVEALING A BACKSIDE OF AN INTEGRATED CIRCUIT DEVICE...

GROUP III-NITRIDE DEVICES ON SOI SUBSTRATES HAVING A COMPLIANT LAYER

CO-INTEGRATION OF EXTENDED-DRAIN AND SELF-ALIGNED III-N TRANSISTORS...

FILM BULK ACOUSTIC RESONATOR (FBAR) DEVICES FOR HIGH FREQUENCY RF F...

ENHANCEMENT-DEPLETION CASCODE ARRANGEMENTS FOR ENHANCEMENT MODE III...

III-N TRANSISTOR ARRANGEMENTS FOR REDUCING NONLINEARITY OF OFF-STAT...

PERIPHERAL INDUCTORS