Paul C. Jamison

Person

Hopewell Junction, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
BEOL fat wire level ground rule compatible embedded artificial inte...
- Patent number 11,956,975
- Issue date Apr 9, 2024
- International Business Machines Corporation
- Soon-Cheon Seo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for controlling the forming voltage in resistive random acce...
- Patent number 11,700,778
- Issue date Jul 11, 2023
- Tokyo Electron Limited
- Steven Consiglio
Information Patent Grant
Back-end-of-line compatible metal-insulator-metal on-chip decouplin...
- Patent number 11,594,596
- Issue date Feb 28, 2023
- International Business Machines Corporation
- Paul Jamison
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Quad-layer high-k for metal-insulator-metal capacitors
- Patent number 11,309,383
- Issue date Apr 19, 2022
- International Business Machines Corporation
- Kisik Choi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Approach to control over-etching of bottom spacers in vertical fin...
- Patent number 11,251,285
- Issue date Feb 15, 2022
- International Business Machines Corporation
- Ruqiang Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Surface area enhancement for stacked metal-insulator-metal (MIM) ca...
- Patent number 11,121,209
- Issue date Sep 14, 2021
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Oxide isolated fin-type field-effect transistors
- Patent number 11,094,801
- Issue date Aug 17, 2021
- International Business Machines Corporation
- Ruqiang Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Back-end-of-line compatible metal-insulator-metal on-chip decouplin...
- Patent number 11,038,013
- Issue date Jun 15, 2021
- International Business Machines Corporation
- Paul Jamison
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for controlling the forming voltage in resistive random acce...
- Patent number 10,991,881
- Issue date Apr 27, 2021
- Tokyo Electron Limited
- Steven Consiglio
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Surface area enhancement for stacked metal-insulator-metal (MIM) ca...
- Patent number 10,978,551
- Issue date Apr 13, 2021
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Complementary metal oxide semiconductor replacement gate high-k met...
- Patent number 10,930,566
- Issue date Feb 23, 2021
- International Business Machines Corporation
- Lisa F. Edge
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate first technique in vertical transport FET using doped silicon...
- Patent number 10,892,339
- Issue date Jan 12, 2021
- International Business Machines Corporation
- Ruqiang Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multilayer dielectric for metal-insulator-metal capacitor (MIMCAP)...
- Patent number 10,886,362
- Issue date Jan 5, 2021
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Leakage current reduction in stacked metal-insulator-metal capacitors
- Patent number 10,833,148
- Issue date Nov 10, 2020
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Oxide isolated fin-type field-effect transistors
- Patent number 10,680,083
- Issue date Jun 9, 2020
- International Business Machines Corporation
- Ruqiang Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Approach to control over-etching of bottom spacers in vertical fin...
- Patent number 10,580,881
- Issue date Mar 3, 2020
- International Business Machines Corporation
- Ruqiang Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Complementary metal oxide semiconductor replacement gate high-k met...
- Patent number 10,573,565
- Issue date Feb 25, 2020
- International Business Machines Corporation
- Lisa F. Edge
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of forming the semiconductor device
- Patent number 10,529,628
- Issue date Jan 7, 2020
- International Business Machines Corporation
- Brent Alan Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Leakage current reduction in stacked metal-insulator-metal capacitors
- Patent number 10,396,146
- Issue date Aug 27, 2019
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-layer work function metal gates with similar gate thickness t...
- Patent number 10,395,989
- Issue date Aug 27, 2019
- International Business Machines Corporation
- Ruqiang Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Leakage current reduction in stacked metal-insulator-metal capacitors
- Patent number 10,381,433
- Issue date Aug 13, 2019
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-layer work function metal gates with similar gate thickness t...
- Patent number 10,312,147
- Issue date Jun 4, 2019
- International Business Machines Corporation
- Ruqiang Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Complementary metal oxide semiconductor replacement gate high-K met...
- Patent number 10,304,746
- Issue date May 28, 2019
- International Business Machines Corporation
- Lisa F. Edge
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Uniform threshold voltage for nanosheet devices
- Patent number 10,297,671
- Issue date May 21, 2019
- International Business Machines Corporation
- Ruqiang Bao
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Formation of full metal gate to suppress interficial layer growth
- Patent number 10,297,598
- Issue date May 21, 2019
- International Business Machines Corporation
- Ruqiang Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multilayer dielectric for metal-insulator-metal capacitor (MIMCAP)...
- Patent number 10,290,700
- Issue date May 14, 2019
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Approach to control over-etching of bottom spacers in vertical fin...
- Patent number 10,283,620
- Issue date May 7, 2019
- International Business Machines Corporation
- Ruqiang Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Controlling threshold voltage in nanosheet transistors
- Patent number 10,170,316
- Issue date Jan 1, 2019
- International Business Machines Corporation
- Hemanth Jagannathan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of forming the semiconductor device
- Patent number 10,134,642
- Issue date Nov 20, 2018
- International Business Machines Corporation
- Brent Alan Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Uniform threshold voltage for nanosheet devices
- Patent number 10,084,055
- Issue date Sep 25, 2018
- International Business Machines Corporation
- Ruqiang Bao
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Ferroelectric Film with Buffer Layers for Improved Reliability of M...
- Publication number 20230420491
- Publication date Dec 28, 2023
- International Business Machines Corporation
- Kisik Choi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BEOL FAT WIRE LEVEL GROUND RULE COMPATIBLE EMBEDDED ARTIFICIAL INTE...
- Publication number 20230079392
- Publication date Mar 16, 2023
- International Business Machines Corporation
- Soon-Cheon Seo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR CONTROLLING THE FORMING VOLTAGE IN RESISTIVE RANDOM ACCE...
- Publication number 20210234096
- Publication date Jul 29, 2021
- TOKYO ELECTRON LIMITED
- Steven Consiglio
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BACK-END-OF-LINE COMPATIBLE METAL-INSULATOR-METAL ON-CHIP DECOUPLIN...
- Publication number 20210193793
- Publication date Jun 24, 2021
- International Business Machines Corporation
- Paul Jamison
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BACK-END-OF-LINE COMPATIBLE METAL-INSULATOR-METAL ON-CHIP DECOUPLIN...
- Publication number 20210028274
- Publication date Jan 28, 2021
- International Business Machines Corporation
- Paul Jamison
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR CONTROLLING THE FORMING VOLTAGE IN RESISTIVE RANDOM ACCE...
- Publication number 20200381624
- Publication date Dec 3, 2020
- TOKYO ELECTRON LIMITED
- Steven Consiglio
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE FIRST TECHNIQUE IN VERTICAL TRANSPORT FET USING DOPED SILICON...
- Publication number 20200295147
- Publication date Sep 17, 2020
- International Business Machines Corporation
- RUQIANG BAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
OXIDE ISOLATED FIN-TYPE FIELD-EFFECT TRANSISTORS
- Publication number 20200243670
- Publication date Jul 30, 2020
- International Business Machines Corporation
- Ruqiang Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPLEMENTARY METAL OXIDE SEMICONDUCTOR REPLACEMENT GATE HIGH-K MET...
- Publication number 20200144134
- Publication date May 7, 2020
- International Business Machines Corporation
- Lisa F. Edge
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
OXIDE ISOLATED FIN-TYPE FIELD-EFFECT TRANSISTORS
- Publication number 20200091319
- Publication date Mar 19, 2020
- International Business Machines Corporation
- Ruqiang Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
APPROACH TO CONTROL OVER-ETCHING OF BOTTOM SPACERS IN VERTICAL FIN...
- Publication number 20200013877
- Publication date Jan 9, 2020
- International Business Machines Corporation
- Ruqiang Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMATION OF FULL METAL GATE TO SUPPRESS INTERFICIAL LAYER GROWTH
- Publication number 20190198500
- Publication date Jun 27, 2019
- International Business Machines Corporation
- RUQIANG BAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPLEMENTARY METAL OXIDE SEMICONDUCTOR REPLACEMENT GATE HIGH-K MET...
- Publication number 20190189524
- Publication date Jun 20, 2019
- International Business Machines Corporation
- Lisa F. Edge
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
UNIFORM THRESHOLD VOLTAGE FOR NANOSHEET DEVICES
- Publication number 20180350935
- Publication date Dec 6, 2018
- International Business Machines Corporation
- Ruqiang Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Method of Forming the Semiconductor Device
- Publication number 20180350698
- Publication date Dec 6, 2018
- International Business Machines Corporation
- Brent Alan ANDERSON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-LAYER WORK FUNCTION METAL GATES WITH SIMILAR GATE THICKNESS T...
- Publication number 20180294191
- Publication date Oct 11, 2018
- International Business Machines Corporation
- Ruqiang Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-LAYER WORK FUNCTION METAL GATES WITH SIMILAR GATE THICKNESS T...
- Publication number 20180294192
- Publication date Oct 11, 2018
- International Business Machines Corporation
- Ruqiang Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SURFACE AREA ENHANCEMENT FOR STACKED METAL-INSULATOR-METAL (MIM) CA...
- Publication number 20180277621
- Publication date Sep 27, 2018
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SURFACE AREA ENHANCEMENT FOR STACKED METAL-INSULATOR-METAL (MIM) CA...
- Publication number 20180277623
- Publication date Sep 27, 2018
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTILAYER DIELECTRIC FOR METAL-INSULATOR-METAL CAPACITOR (MIMCAP)...
- Publication number 20180240861
- Publication date Aug 23, 2018
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTILAYER DIELECTRIC FOR METAL-INSULATOR-METAL CAPACITOR (MIMCAP)...
- Publication number 20180240863
- Publication date Aug 23, 2018
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTILAYER DIELECTRIC FOR METAL-INSULATOR-METAL CAPACITOR (MIMCAP)...
- Publication number 20180240862
- Publication date Aug 23, 2018
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
UNIFORM THRESHOLD VOLTAGE FOR NANOSHEET DEVICES
- Publication number 20180226484
- Publication date Aug 9, 2018
- International Business Machines Corporation
- Ruqiang Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LEAKAGE CURRENT REDUCTION IN STACKED METAL-INSULATOR-METAL CAPACITORS
- Publication number 20180212018
- Publication date Jul 26, 2018
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
APPROACH TO CONTROL OVER-ETCHING OF BOTTOM SPACERS IN VERTICAL FIN...
- Publication number 20180212037
- Publication date Jul 26, 2018
- International Business Machines Corporation
- Ruqiang Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
APPROACH TO CONTROL OVER-ETCHING OF BOTTOM SPACERS IN VERTICAL FIN...
- Publication number 20180212040
- Publication date Jul 26, 2018
- International Business Machines Corporation
- Ruqiang Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMATION OF FULL METAL GATE TO SUPPRESS INTERFICIAL LAYER GROWTH
- Publication number 20180204839
- Publication date Jul 19, 2018
- International Business Machines Corporation
- RUQIANG BAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LEAKAGE CURRENT REDUCTION IN STACKED METAL-INSULATOR-METAL CAPACITORS
- Publication number 20180197943
- Publication date Jul 12, 2018
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LEAKAGE CURRENT REDUCTION IN STACKED METAL-INSULATOR-METAL CAPACITORS
- Publication number 20180197944
- Publication date Jul 12, 2018
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LEAKAGE CURRENT REDUCTION IN STACKED METAL-INSULATOR-METAL CAPACITORS
- Publication number 20180197945
- Publication date Jul 12, 2018
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS

Paul C. Jamison

Person

Patents Grantslast 30 patents

BEOL fat wire level ground rule compatible embedded artificial inte...

Method for controlling the forming voltage in resistive random acce...

Back-end-of-line compatible metal-insulator-metal on-chip decouplin...

Quad-layer high-k for metal-insulator-metal capacitors

Approach to control over-etching of bottom spacers in vertical fin...

Surface area enhancement for stacked metal-insulator-metal (MIM) ca...

Oxide isolated fin-type field-effect transistors

Back-end-of-line compatible metal-insulator-metal on-chip decouplin...

Method for controlling the forming voltage in resistive random acce...

Surface area enhancement for stacked metal-insulator-metal (MIM) ca...

Complementary metal oxide semiconductor replacement gate high-k met...

Gate first technique in vertical transport FET using doped silicon...

Multilayer dielectric for metal-insulator-metal capacitor (MIMCAP)...

Leakage current reduction in stacked metal-insulator-metal capacitors

Oxide isolated fin-type field-effect transistors

Approach to control over-etching of bottom spacers in vertical fin...

Complementary metal oxide semiconductor replacement gate high-k met...

Semiconductor device and method of forming the semiconductor device

Leakage current reduction in stacked metal-insulator-metal capacitors

Multi-layer work function metal gates with similar gate thickness t...

Leakage current reduction in stacked metal-insulator-metal capacitors

Multi-layer work function metal gates with similar gate thickness t...

Complementary metal oxide semiconductor replacement gate high-K met...

Uniform threshold voltage for nanosheet devices

Formation of full metal gate to suppress interficial layer growth

Multilayer dielectric for metal-insulator-metal capacitor (MIMCAP)...

Approach to control over-etching of bottom spacers in vertical fin...

Controlling threshold voltage in nanosheet transistors

Semiconductor device and method of forming the semiconductor device

Uniform threshold voltage for nanosheet devices

Patents Applicationslast 30 patents

Ferroelectric Film with Buffer Layers for Improved Reliability of M...

BEOL FAT WIRE LEVEL GROUND RULE COMPATIBLE EMBEDDED ARTIFICIAL INTE...

METHOD FOR CONTROLLING THE FORMING VOLTAGE IN RESISTIVE RANDOM ACCE...

BACK-END-OF-LINE COMPATIBLE METAL-INSULATOR-METAL ON-CHIP DECOUPLIN...

BACK-END-OF-LINE COMPATIBLE METAL-INSULATOR-METAL ON-CHIP DECOUPLIN...

METHOD FOR CONTROLLING THE FORMING VOLTAGE IN RESISTIVE RANDOM ACCE...

GATE FIRST TECHNIQUE IN VERTICAL TRANSPORT FET USING DOPED SILICON...

OXIDE ISOLATED FIN-TYPE FIELD-EFFECT TRANSISTORS

COMPLEMENTARY METAL OXIDE SEMICONDUCTOR REPLACEMENT GATE HIGH-K MET...

OXIDE ISOLATED FIN-TYPE FIELD-EFFECT TRANSISTORS

APPROACH TO CONTROL OVER-ETCHING OF BOTTOM SPACERS IN VERTICAL FIN...

FORMATION OF FULL METAL GATE TO SUPPRESS INTERFICIAL LAYER GROWTH

COMPLEMENTARY METAL OXIDE SEMICONDUCTOR REPLACEMENT GATE HIGH-K MET...

UNIFORM THRESHOLD VOLTAGE FOR NANOSHEET DEVICES

Semiconductor Device and Method of Forming the Semiconductor Device

MULTI-LAYER WORK FUNCTION METAL GATES WITH SIMILAR GATE THICKNESS T...

MULTI-LAYER WORK FUNCTION METAL GATES WITH SIMILAR GATE THICKNESS T...

SURFACE AREA ENHANCEMENT FOR STACKED METAL-INSULATOR-METAL (MIM) CA...

SURFACE AREA ENHANCEMENT FOR STACKED METAL-INSULATOR-METAL (MIM) CA...

MULTILAYER DIELECTRIC FOR METAL-INSULATOR-METAL CAPACITOR (MIMCAP)...

MULTILAYER DIELECTRIC FOR METAL-INSULATOR-METAL CAPACITOR (MIMCAP)...

MULTILAYER DIELECTRIC FOR METAL-INSULATOR-METAL CAPACITOR (MIMCAP)...

UNIFORM THRESHOLD VOLTAGE FOR NANOSHEET DEVICES

LEAKAGE CURRENT REDUCTION IN STACKED METAL-INSULATOR-METAL CAPACITORS

APPROACH TO CONTROL OVER-ETCHING OF BOTTOM SPACERS IN VERTICAL FIN...

APPROACH TO CONTROL OVER-ETCHING OF BOTTOM SPACERS IN VERTICAL FIN...

FORMATION OF FULL METAL GATE TO SUPPRESS INTERFICIAL LAYER GROWTH

LEAKAGE CURRENT REDUCTION IN STACKED METAL-INSULATOR-METAL CAPACITORS

LEAKAGE CURRENT REDUCTION IN STACKED METAL-INSULATOR-METAL CAPACITORS

LEAKAGE CURRENT REDUCTION IN STACKED METAL-INSULATOR-METAL CAPACITORS