Paul C. Parries

Person

Wappingers Falls, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Structure and method to control bottom corner threshold in an SOI d...
- Patent number 9,484,269
- Issue date Nov 1, 2016
- GLOBALFOUNDRIES Inc.
- Joseph Ervin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Correcting for stress induced pattern shifts in semiconductor manuf...
- Patent number 9,311,443
- Issue date Apr 12, 2016
- Dureseti Chidambarrao
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Asymmetric stressor DRAM
- Patent number 9,240,482
- Issue date Jan 19, 2016
- GLOBALFOUNDRIES Inc.
- Ravi K. Dasaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low energy ion implantation of a junction butting region
- Patent number 9,136,321
- Issue date Sep 15, 2015
- International Business Machines Corporation
- Shreesh Narasimha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thermally stable high-K tetragonal HFO2 layer within high aspect ra...
- Patent number 9,087,927
- Issue date Jul 21, 2015
- International Business Machines Corporation
- Michael P. Chudzik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating isolated capacitors and structure thereof
- Patent number 8,963,283
- Issue date Feb 24, 2015
- International Business Machines Corporation
- Oh-Jung Kwon
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Method of fabricating isolated capacitors and structure thereof
- Patent number 8,940,617
- Issue date Jan 27, 2015
- International Business Machines Corporation
- Oh-Jung Kwon
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Thermally stable high-K tetragonal HFO2 layer within high aspect ra...
- Patent number 8,901,706
- Issue date Dec 2, 2014
- International Business Machines Corporation
- Michael P. Chudzik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reduced corner leakage in SOI structure and method
- Patent number 8,835,994
- Issue date Sep 16, 2014
- International Business Machines Corporation
- Joseph Ervin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FET structures with trench implantation to improve back channel lea...
- Patent number 8,809,953
- Issue date Aug 19, 2014
- International Business Machines Corporation
- David M. Fried
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reduced corner leakage in SOI structure and method
- Patent number 8,741,780
- Issue date Jun 3, 2014
- International Business Machines Corporation
- Joseph Ervin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Polysilicon/metal contact resistance in deep trench
- Patent number 8,723,243
- Issue date May 13, 2014
- International Business Machines Corporation
- Brian W. Messenger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating isolated capacitors and structure thereof
- Patent number 8,716,776
- Issue date May 6, 2014
- International Business Machines Corporation
- Oh-Jung Kwon
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Method of fabricating isolated capacitors and structure thereof
- Patent number 8,652,925
- Issue date Feb 18, 2014
- International Business Machines Corporation
- Oh-Jung Kwon
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Semiconductor structure having wide and narrow deep trenches with d...
- Patent number 8,652,933
- Issue date Feb 18, 2014
- International Business Machines Corporation
- Paul C. Parries
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Polysilicon/metal contact resistance in deep trench
- Patent number 8,642,423
- Issue date Feb 4, 2014
- International Business Machines Corporation
- Brian W. Messenger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method for forming isolation and buried plate for tre...
- Patent number 8,637,958
- Issue date Jan 28, 2014
- International Business Machines Corporation
- Abhishek Dube
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to reduce threshold voltage variability with through gate we...
- Patent number 8,536,649
- Issue date Sep 17, 2013
- International Business Machines Corporation
- Geng Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Isolation in CMOSFET devices utilizing buried air bags
- Patent number 8,395,217
- Issue date Mar 12, 2013
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method for forming isolation and buried plate for tre...
- Patent number 8,298,908
- Issue date Oct 30, 2012
- International Business Machines Corporation
- Abhishek Dube
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to reduce threshold voltage variability with through gate we...
- Patent number 8,298,884
- Issue date Oct 30, 2012
- International Business Machines Corporation
- Geng Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Through-gate implant for body dopant
- Patent number 8,273,629
- Issue date Sep 25, 2012
- International Business Machines Corporation
- Geng Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FET structures with trench implantation to improve back channel lea...
- Patent number 8,236,632
- Issue date Aug 7, 2012
- International Business Machines Corporation
- David M. Fried
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Deep trench capacitor in a SOI substrate having a laterally protrud...
- Patent number 8,198,169
- Issue date Jun 12, 2012
- International Business Machines Corporation
- MaryJane Brodsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
DRAM having deep trench capacitors with lightly doped buried plates
- Patent number 7,923,815
- Issue date Apr 12, 2011
- International Business Machines Corporation
- Geng Wang
- G11 - INFORMATION STORAGE
Information Patent Grant
Deep trench capacitor in a SOI substrate having a laterally protrud...
- Patent number 7,888,723
- Issue date Feb 15, 2011
- International Business Machines Corporation
- MaryJane Brodsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SOI deep trench capacitor employing a non-conformal inner spacer
- Patent number 7,791,124
- Issue date Sep 7, 2010
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Providing isolation for wordline passing over deep trench capacitor
- Patent number 7,705,386
- Issue date Apr 27, 2010
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Differential and hierarchical sensing for memory circuits
- Patent number 7,564,729
- Issue date Jul 21, 2009
- International Business Machines Corporation
- John Edward Barth, Jr.
- G11 - INFORMATION STORAGE
Information Patent Grant
Differential and hierarchical sensing for memory circuits
- Patent number 7,382,672
- Issue date Jun 3, 2008
- International Business Machines Corporation
- John Edward Barth, Jr.
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
CORRECTING FOR STRESS INDUCED PATTERN SHIFTS IN SEMICONDUCTOR MANUF...
- Publication number 20150363536
- Publication date Dec 17, 2015
- International Business Machines Corporation
- Dureseti Chidambarrao
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
ASYMMETRIC STRESSOR DRAM
- Publication number 20150349121
- Publication date Dec 3, 2015
- International Business Machines Corporation
- Ravi K. Dasaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW ENERGY ION IMPLANTATION OF A JUNCTION BUTTING REGION
- Publication number 20150348974
- Publication date Dec 3, 2015
- GLOBALFOUNDRIES INC.
- Shreesh Narasimha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ASYMMETRIC STRESSOR DRAM
- Publication number 20150348972
- Publication date Dec 3, 2015
- International Business Machines Corporation
- Shreesh Narasimha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THERMALLY STABLE HIGH-K TETRAGONAL HFO2 LAYER WITHIN HIGH ASPECT RA...
- Publication number 20150044853
- Publication date Feb 12, 2015
- International Business Machines Corporation
- Michael P. Chudzik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET CONTACTING A CONDUCTIVE STRAP STRUCTURE OF A DRAM
- Publication number 20150037941
- Publication date Feb 5, 2015
- International Business Machines Corporation
- Josephine B. Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING ISOLATED CAPACITORS AND STRUCTURE THEREOF
- Publication number 20140210039
- Publication date Jul 31, 2014
- International Business Machines Corporation
- Oh-Jung KWON
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
Method of Fabricating Isolated Capacitors and Structure Thereof
- Publication number 20140080281
- Publication date Mar 20, 2014
- International Business Machines Corporation
- Oh-Jung KWON
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
POLYSILICON/METAL CONTACT RESISTANCE IN DEEP TRENCH
- Publication number 20140054664
- Publication date Feb 27, 2014
- International Business Machines Corporation
- Brian W. Messenger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET CONTACTING A CONDUCTIVE STRAP STRUCTURE OF A DRAM
- Publication number 20130320422
- Publication date Dec 5, 2013
- International Business Machines Corporation
- Josephine B. Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Reduced Corner Leakage in SOI Structure and Method
- Publication number 20130189826
- Publication date Jul 25, 2013
- International Business Machines Corporation
- Joseph Ervin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THERMALLY STABLE HIGH-K TETRAGONAL HFO2 LAYER WITHIN HIGH ASPECT RA...
- Publication number 20130175665
- Publication date Jul 11, 2013
- International Business Machines Corporation
- Michael P. Chudzik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POLYSILICON/METAL CONTACT RESISTANCE IN DEEP TRENCH
- Publication number 20130134491
- Publication date May 30, 2013
- International Business Machines Corporation
- Brian W. Messenger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH FORMATION IN SUBSTRATE
- Publication number 20130043559
- Publication date Feb 21, 2013
- International Business Machines Corporation
- JUNEDONG LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND METHOD FOR FORMING ISOLATION AND BURIED PLATE FOR TRE...
- Publication number 20130009277
- Publication date Jan 10, 2013
- International Business Machines Corporation
- Abhishek Dube
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD TO REDUCE THRESHOLD VOLTAGE VARIABILITY WITH THROUGH GATE WE...
- Publication number 20120326233
- Publication date Dec 27, 2012
- International Business Machines Corporation
- Geng Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Fabricating Isolated Capacitors and Structure Thereof
- Publication number 20120267754
- Publication date Oct 25, 2012
- International Business Machines Corporation
- Oh-Jung KWON
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
FET STRUCTURES WITH TRENCH IMPLANTATION TO IMPROVE BACK CHANNEL LEA...
- Publication number 20120187490
- Publication date Jul 26, 2012
- International Business Machines Corporation
- DAVID M FRIED
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE HAVING WIDE AND NARROW DEEP TRENCHES WITH D...
- Publication number 20120122303
- Publication date May 17, 2012
- International Business Machines Corporation
- PAUL C. PARRIES
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FET STRUCTURES WITH TRENCH IMPLANTATION TO IMPROVE BACK CHANNEL LEA...
- Publication number 20120086077
- Publication date Apr 12, 2012
- International Business Machines Corporation
- DAVID M FRIED
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD TO REDUCE THRESHOLD VOLTAGE VARIABILITY WITH THROUGH GATE WE...
- Publication number 20120049295
- Publication date Mar 1, 2012
- International Business Machines Corporation
- Geng Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Fabricating Isolated Capacitors and Structure Thereof
- Publication number 20120012971
- Publication date Jan 19, 2012
- International Business Machines Corporation
- Oh-Jung KWON
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
STRUCTURE AND METHOD TO CONTROL BOTTOM CORNER THRESHOLD IN AN SOI D...
- Publication number 20110316061
- Publication date Dec 29, 2011
- International Business Machines Corporation
- Joseph ERVIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REDUCED CORNER LEAKAGE IN SOI STRUCTURE AND METHOD
- Publication number 20110291169
- Publication date Dec 1, 2011
- International Business Machines Corporation
- Joseph Ervin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND METHOD FOR FORMING ISOLATION AND BURIED PLATE FOR TRE...
- Publication number 20110193193
- Publication date Aug 11, 2011
- International Business Machines Corporation
- Abhishek Dube
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEEP TRENCH CAPACITOR IN A SOI SUBSTRATE HAVING A LATERALLY PROTRUD...
- Publication number 20110092043
- Publication date Apr 21, 2011
- International Business Machines Corporation
- MaryJane Brodsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Through-Gate Implant for Body Dopant
- Publication number 20100237417
- Publication date Sep 23, 2010
- International Business Machines Corporation
- Geng Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOI DEEP TRENCH CAPACITOR EMPLOYING A NON-CONFORMAL INNER SPACER
- Publication number 20090289291
- Publication date Nov 26, 2009
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTENT ADDRESSABLE MEMORY WITH HIDDEN TABLE UPDATE, DESIGN STRUCTU...
- Publication number 20090240875
- Publication date Sep 24, 2009
- Albert M. Chu
- G11 - INFORMATION STORAGE
Information Patent Application
DEEP TRENCH CAPACITOR IN A SOI SUBSTRATE HAVING A LATERALLY PROTRUD...
- Publication number 20090184356
- Publication date Jul 23, 2009
- International Business Machines Corporation
- MaryJane Brodsky
- H01 - BASIC ELECTRIC ELEMENTS

Paul C. Parries

Person

Patents Grantslast 30 patents

Structure and method to control bottom corner threshold in an SOI d...

Correcting for stress induced pattern shifts in semiconductor manuf...

Asymmetric stressor DRAM

Low energy ion implantation of a junction butting region

Thermally stable high-K tetragonal HFO2 layer within high aspect ra...

Method of fabricating isolated capacitors and structure thereof

Method of fabricating isolated capacitors and structure thereof

Thermally stable high-K tetragonal HFO2 layer within high aspect ra...

Reduced corner leakage in SOI structure and method

FET structures with trench implantation to improve back channel lea...

Reduced corner leakage in SOI structure and method

Polysilicon/metal contact resistance in deep trench

Method of fabricating isolated capacitors and structure thereof

Method of fabricating isolated capacitors and structure thereof

Semiconductor structure having wide and narrow deep trenches with d...

Polysilicon/metal contact resistance in deep trench

Structure and method for forming isolation and buried plate for tre...

Method to reduce threshold voltage variability with through gate we...

Isolation in CMOSFET devices utilizing buried air bags

Structure and method for forming isolation and buried plate for tre...

Method to reduce threshold voltage variability with through gate we...

Through-gate implant for body dopant

FET structures with trench implantation to improve back channel lea...

Deep trench capacitor in a SOI substrate having a laterally protrud...

DRAM having deep trench capacitors with lightly doped buried plates

Deep trench capacitor in a SOI substrate having a laterally protrud...

SOI deep trench capacitor employing a non-conformal inner spacer

Providing isolation for wordline passing over deep trench capacitor

Differential and hierarchical sensing for memory circuits

Differential and hierarchical sensing for memory circuits

Patents Applicationslast 30 patents

CORRECTING FOR STRESS INDUCED PATTERN SHIFTS IN SEMICONDUCTOR MANUF...

ASYMMETRIC STRESSOR DRAM

LOW ENERGY ION IMPLANTATION OF A JUNCTION BUTTING REGION

ASYMMETRIC STRESSOR DRAM

THERMALLY STABLE HIGH-K TETRAGONAL HFO2 LAYER WITHIN HIGH ASPECT RA...

FINFET CONTACTING A CONDUCTIVE STRAP STRUCTURE OF A DRAM

METHOD OF FABRICATING ISOLATED CAPACITORS AND STRUCTURE THEREOF

Method of Fabricating Isolated Capacitors and Structure Thereof

POLYSILICON/METAL CONTACT RESISTANCE IN DEEP TRENCH

FINFET CONTACTING A CONDUCTIVE STRAP STRUCTURE OF A DRAM

Reduced Corner Leakage in SOI Structure and Method

THERMALLY STABLE HIGH-K TETRAGONAL HFO2 LAYER WITHIN HIGH ASPECT RA...

POLYSILICON/METAL CONTACT RESISTANCE IN DEEP TRENCH

TRENCH FORMATION IN SUBSTRATE

STRUCTURE AND METHOD FOR FORMING ISOLATION AND BURIED PLATE FOR TRE...

METHOD TO REDUCE THRESHOLD VOLTAGE VARIABILITY WITH THROUGH GATE WE...

Method of Fabricating Isolated Capacitors and Structure Thereof

FET STRUCTURES WITH TRENCH IMPLANTATION TO IMPROVE BACK CHANNEL LEA...

SEMICONDUCTOR STRUCTURE HAVING WIDE AND NARROW DEEP TRENCHES WITH D...

FET STRUCTURES WITH TRENCH IMPLANTATION TO IMPROVE BACK CHANNEL LEA...

METHOD TO REDUCE THRESHOLD VOLTAGE VARIABILITY WITH THROUGH GATE WE...

Method of Fabricating Isolated Capacitors and Structure Thereof

STRUCTURE AND METHOD TO CONTROL BOTTOM CORNER THRESHOLD IN AN SOI D...

REDUCED CORNER LEAKAGE IN SOI STRUCTURE AND METHOD

STRUCTURE AND METHOD FOR FORMING ISOLATION AND BURIED PLATE FOR TRE...

DEEP TRENCH CAPACITOR IN A SOI SUBSTRATE HAVING A LATERALLY PROTRUD...

Through-Gate Implant for Body Dopant

SOI DEEP TRENCH CAPACITOR EMPLOYING A NON-CONFORMAL INNER SPACER

CONTENT ADDRESSABLE MEMORY WITH HIDDEN TABLE UPDATE, DESIGN STRUCTU...

DEEP TRENCH CAPACITOR IN A SOI SUBSTRATE HAVING A LATERALLY PROTRUD...