Paul David Brabant

Person

East Greenbush, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Low temperature epitaxy of a semiconductor alloy including silicon...
- Patent number 9,218,962
- Issue date Dec 22, 2015
- GLOBALFOUNDRIES Inc.
- Paul D. Brabant
- C30 - CRYSTAL GROWTH
Information Patent Grant
Methods and apparatus for selective epitaxy of Si-containing materi...
- Patent number 8,759,200
- Issue date Jun 24, 2014
- Matheson Tri-Gas, Inc.
- Terry Arthur Francis
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Low temperature selective epitaxy of silicon germanium alloys emplo...
- Patent number 8,642,454
- Issue date Feb 4, 2014
- International Business Machines Corporation
- Paul D. Brabant
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Patents Applicationslast 30 patents

Information Patent Application
LOW TEMPERATURE SELECTIVE DEPOSITION EMPLOYING A GERMANIUM-CONTAINI...
- Publication number 20170194138
- Publication date Jul 6, 2017
- International Business Machines Corporation
- Paul D. Brabant
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods for Selective and Conformal Epitaxy of Highly Doped Si-cont...
- Publication number 20140120678
- Publication date May 1, 2014
- Matheson Tri-Gas
- Manabu Shinriki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW TEMPERATURE EPITAXY OF A SEMICONDUCTOR ALLOY INCLUDING SILICON...
- Publication number 20140045324
- Publication date Feb 13, 2014
- Matheson Tri-Gas, Inc.
- Paul D. Brabant
- C30 - CRYSTAL GROWTH
Information Patent Application
EPITAXIAL PROCESS WITH SURFACE CLEANING FIRST USING HCl/GeH4/H2SiCl2
- Publication number 20130040438
- Publication date Feb 14, 2013
- International Business Machines Corporation
- Thomas N. Adam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAXIAL PROCESS WITH SURFACE CLEANING FIRST USING HCl/GeH4/H2SiCl2
- Publication number 20130040440
- Publication date Feb 14, 2013
- International Business Machines Corporation
- Thomas N. Adam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW TEMPERATURE SELECTIVE EPITAXY OF SILICON GERMANIUM ALLOYS EMPLO...
- Publication number 20120295421
- Publication date Nov 22, 2012
- International Business Machines Corporation
- Paul D. Brabant
- C30 - CRYSTAL GROWTH
Information Patent Application
Thin films and methods of making them using cyclohexasilane
- Publication number 20120024223
- Publication date Feb 2, 2012
- Matheson Tri-Gas, Inc.
- Robert Torres, JR.
- C30 - CRYSTAL GROWTH
Information Patent Application
Methods and apparatus for selective epitaxy of si-containing materi...
- Publication number 20120003819
- Publication date Jan 5, 2012
- International Business Machines Corporation
- Terry Arthur Francis
- C30 - CRYSTAL GROWTH

Paul David Brabant

Person

Patents Grantslast 30 patents

Low temperature epitaxy of a semiconductor alloy including silicon...

Methods and apparatus for selective epitaxy of Si-containing materi...

Low temperature selective epitaxy of silicon germanium alloys emplo...

Patents Applicationslast 30 patents

LOW TEMPERATURE SELECTIVE DEPOSITION EMPLOYING A GERMANIUM-CONTAINI...

Methods for Selective and Conformal Epitaxy of Highly Doped Si-cont...

LOW TEMPERATURE EPITAXY OF A SEMICONDUCTOR ALLOY INCLUDING SILICON...

EPITAXIAL PROCESS WITH SURFACE CLEANING FIRST USING HCl/GeH4/H2SiCl2

EPITAXIAL PROCESS WITH SURFACE CLEANING FIRST USING HCl/GeH4/H2SiCl2

LOW TEMPERATURE SELECTIVE EPITAXY OF SILICON GERMANIUM ALLOYS EMPLO...

Thin films and methods of making them using cyclohexasilane

Methods and apparatus for selective epitaxy of si-containing materi...