Paul Ellinghaus

Person

Unterhaching, DE

People

Patents Grantslast 30 patents

Information Patent Grant
Silicon carbide device with a stripe-shaped trench gate structure
- Patent number 12,266,694
- Issue date Apr 1, 2025
- Infineon Technologies AG
- Caspar Leendertz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device fabricated using channeling implant
- Patent number 12,057,316
- Issue date Aug 6, 2024
- Infineon Technologies AG
- Moriz Jelinek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of producing a silicon carbide device with a trench gate
- Patent number 11,888,032
- Issue date Jan 30, 2024
- Infineon Technologies AG
- Caspar Leendertz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide device with trench gate
- Patent number 11,552,173
- Issue date Jan 10, 2023
- Infineon Technologies AG
- Caspar Leendertz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SiC device with channel regions extending along at least one of the...
- Patent number 11,462,611
- Issue date Oct 4, 2022
- Infineon Technologies AG
- Thomas Aichinger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SiC device and methods of manufacturing thereof
- Patent number 10,896,952
- Issue date Jan 19, 2021
- Infineon Technologies AG
- Thomas Aichinger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SiC trench transistor device and methods of manufacturing thereof
- Patent number 10,586,845
- Issue date Mar 10, 2020
- Infineon Technologies AG
- Thomas Aichinger
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SILICON CARBIDE DEVICE WITH A STRIPE-SHAPED TRENCH GATE STRUCTURE
- Publication number 20240136406
- Publication date Apr 25, 2024
- INFINEON TECHNOLOGIES AG
- Caspar Leendertz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH GATE STRUCTURE AND CURRENT SPREAD REGION
- Publication number 20240096934
- Publication date Mar 21, 2024
- INFINEON TECHNOLOGIES AG
- Paul ELLINGHAUS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF PRODUCING A SILICON CARBIDE DEVICE WITH A TRENCH GATE
- Publication number 20230094032
- Publication date Mar 30, 2023
- Caspar Leendertz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20230083106
- Publication date Mar 16, 2023
- INFINEON TECHNOLOGIES AG
- Moriz JELINEK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SiC Device with Channel Regions Extending Along at least one of the...
- Publication number 20210118986
- Publication date Apr 22, 2021
- Thomas Aichinger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicon Carbide Device with Trench Gate
- Publication number 20210050421
- Publication date Feb 18, 2021
- Caspar Leendertz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SiC Device and Methods of Manufacturing Thereof
- Publication number 20200194544
- Publication date Jun 18, 2020
- INFINEON TECHNOLOGIES AG
- Thomas Aichinger
- H01 - BASIC ELECTRIC ELEMENTS

Paul Ellinghaus

Person

Patents Grantslast 30 patents

Silicon carbide device with a stripe-shaped trench gate structure

Semiconductor device fabricated using channeling implant

Method of producing a silicon carbide device with a trench gate

Silicon carbide device with trench gate

SiC device with channel regions extending along at least one of the...

SiC device and methods of manufacturing thereof

SiC trench transistor device and methods of manufacturing thereof

Patents Applicationslast 30 patents

SILICON CARBIDE DEVICE WITH A STRIPE-SHAPED TRENCH GATE STRUCTURE

SEMICONDUCTOR DEVICE WITH GATE STRUCTURE AND CURRENT SPREAD REGION

METHOD OF PRODUCING A SILICON CARBIDE DEVICE WITH A TRENCH GATE

SEMICONDUCTOR DEVICE

SiC Device with Channel Regions Extending Along at least one of the...

Silicon Carbide Device with Trench Gate

SiC Device and Methods of Manufacturing Thereof