Paul HASHIMOTO

Person

Los Angeles, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Apparatus and method for reducing the interface resistance in GaN H...
- Patent number 9,252,247
- Issue date Feb 2, 2016
- HRL Laboratories, LLC
- Miroslav Micovic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned sidewall gate GaN HEMT
- Patent number 8,766,321
- Issue date Jul 1, 2014
- HRL Laboratories, LLC
- Keisuke Shinohara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Enhancement and depletion mode GaN HMETs on the same substrate
- Patent number 8,748,244
- Issue date Jun 10, 2014
- HRL Laboratories, LLC
- Andrea Corrion
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Apparatus and method for reducing the interface resistance in GaN h...
- Patent number 8,686,473
- Issue date Apr 1, 2014
- HRL Laboratories, LLC
- Miroslav Micovic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self aligned sidewall gate GaN HEMT
- Patent number 8,383,471
- Issue date Feb 26, 2013
- HRL Laboratories, LLC
- Keisuke Shinihara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ohmic metal contact protection using an encapsulation layer
- Patent number 8,030,688
- Issue date Oct 4, 2011
- HRL Laboratories, LLC
- Tahir Hussain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for fabricating ultra-low contact resistances in GaN-based...
- Patent number 7,700,974
- Issue date Apr 20, 2010
- HRL Laboratories, LLC
- Nguyen Xuan Nguyen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High power-low noise microwave GaN heterojunction field effect tran...
- Patent number 7,598,131
- Issue date Oct 6, 2009
- HRL Laboratories, LLC
- Miroslav Micovic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ohmic metal contact and channel protection in GaN devices using an...
- Patent number 7,566,916
- Issue date Jul 28, 2009
- HRL Laboratories, LLC
- Tahir Hussain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High power-low noise microwave GaN heterojunction field effect tran...
- Patent number 7,470,941
- Issue date Dec 30, 2008
- HRL Laboratories, LLC
- Miroslav Micovic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-planar nitride-based heterostructure field effect transistor
- Patent number 7,247,893
- Issue date Jul 24, 2007
- HRL Laboratories, LLC
- Jeong Sun Moon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
GaN DHFET
- Patent number 7,098,490
- Issue date Aug 29, 2006
- HRL Laboratories, LLC
- Miroslav Micovic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for fabricating ultra-low contact resistances in GaN-based...
- Patent number 6,897,137
- Issue date May 24, 2005
- HRL Laboratories, LLC
- Nguyen Xuan Nguyen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ohmic metal contact and channel protection in GaN devices using an...
- Patent number 6,884,704
- Issue date Apr 26, 2005
- HRL Laboratories, LLC
- Tahir Hussain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ohmic contacts for high electron mobility transistors and a method...
- Patent number 6,852,615
- Issue date Feb 8, 2005
- HRL Laboratories, LLC
- Miroslav Micovic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a non-planar nitride-based heterostructure f...
- Patent number 6,830,945
- Issue date Dec 14, 2004
- HRL Laboratories, LLC
- Jeong Sun Moon
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SELF-ALIGNED SIDEWALL GATE GaN HEMT
- Publication number 20130119400
- Publication date May 16, 2013
- HRL Laboratories
- Keisuke Shinohara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
OHMIC METAL CONTACT PROTECTION USING AN ENCAPSULATION LAYER
- Publication number 20090250725
- Publication date Oct 8, 2009
- HRL LABORATORIES, LLC
- Tahir HUSSAIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for fabricating a non-planar nitride-based heterostructure f...
- Publication number 20050194602
- Publication date Sep 8, 2005
- HRL Laboratories, LLC
- Jeong Sun Moon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Process for fabricating ultra-low contact resistances in GaN-based...
- Publication number 20050184309
- Publication date Aug 25, 2005
- HRL Laboratories, LLC
- Nguyen Xuan Nguyen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Ohmic metal contact and channel protection in GaN devices using an...
- Publication number 20050048747
- Publication date Mar 3, 2005
- HRL Laboratories, LLC
- Tahir Hussain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GaN DHFET
- Publication number 20040238842
- Publication date Dec 2, 2004
- HRL Laboratories, LLC
- Miroslav Micovic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Process for fabricating ultra-low contact resistances in GaN-based...
- Publication number 20040094759
- Publication date May 20, 2004
- HRL Laboratories, LLC
- Nguyen Xuan Nguyen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for fabricating a non-planar nitride-based heterostructure f...
- Publication number 20040051112
- Publication date Mar 18, 2004
- HRL Laboratories, LLC
- Jeong Sun Moon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Ohmic metal contact and channel protection in GaN devices using an...
- Publication number 20040029330
- Publication date Feb 12, 2004
- Tahir Hussain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Ga/A1GaN Heterostructure Field Effect Transistor with dielectric re...
- Publication number 20040021152
- Publication date Feb 5, 2004
- Chanh Nguyen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Ohmic contacts for high electron mobility transistors and a method...
- Publication number 20030227027
- Publication date Dec 11, 2003
- HRL Laboratories, LLC
- Miroslav Micovic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High power-low noise microwave GaN heterojunction field effet trans...
- Publication number 20030218183
- Publication date Nov 27, 2003
- Miroslav Micovic
- H01 - BASIC ELECTRIC ELEMENTS

Paul HASHIMOTO

Person

Patents Grantslast 30 patents

Apparatus and method for reducing the interface resistance in GaN H...

Self-aligned sidewall gate GaN HEMT

Enhancement and depletion mode GaN HMETs on the same substrate

Apparatus and method for reducing the interface resistance in GaN h...

Self aligned sidewall gate GaN HEMT

Ohmic metal contact protection using an encapsulation layer

Process for fabricating ultra-low contact resistances in GaN-based...

High power-low noise microwave GaN heterojunction field effect tran...

Ohmic metal contact and channel protection in GaN devices using an...

High power-low noise microwave GaN heterojunction field effect tran...

Non-planar nitride-based heterostructure field effect transistor

GaN DHFET

Process for fabricating ultra-low contact resistances in GaN-based...

Ohmic metal contact and channel protection in GaN devices using an...

Ohmic contacts for high electron mobility transistors and a method...

Method for fabricating a non-planar nitride-based heterostructure f...

Patents Applicationslast 30 patents

SELF-ALIGNED SIDEWALL GATE GaN HEMT

OHMIC METAL CONTACT PROTECTION USING AN ENCAPSULATION LAYER

Method for fabricating a non-planar nitride-based heterostructure f...

Process for fabricating ultra-low contact resistances in GaN-based...

Ohmic metal contact and channel protection in GaN devices using an...

GaN DHFET

Process for fabricating ultra-low contact resistances in GaN-based...

Method for fabricating a non-planar nitride-based heterostructure f...

Ohmic metal contact and channel protection in GaN devices using an...

Ga/A1GaN Heterostructure Field Effect Transistor with dielectric re...

Ohmic contacts for high electron mobility transistors and a method...

High power-low noise microwave GaN heterojunction field effet trans...